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IRFB3306PBF

IRFB3306PBF
Mfr. #:
IRFB3306PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFB3306PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB3306PBF DatasheetIRFB3306PBF Datasheet (P4-P6)IRFB3306PBF Datasheet (P7-P9)IRFB3306PBF Datasheet (P10-P12)
ECAD Model:
Más información:
IRFB3306PBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
160 A
Rds On - Resistencia de la fuente de drenaje:
3.3 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
85 nC
Pd - Disipación de energía:
230 W
Configuración:
Único
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001556002
Unidad de peso:
0.211644 oz
Tags
IRFB3306P, IRFB3306, IRFB330, IRFB33, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRFB3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB
*** Source Electronics
MOSFET N-CH 60V 120A TO-220AB / Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3306; Current Id Max:120A; N-channel Gate Charge:85nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:620A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
Parte # Mfg. Descripción Valores Precio
IRFB3306PBF
DISTI # 26749318		Infineon Technologies AGTrans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube4463
  • 6000:$0.5726
  • 3000:$0.5769
  • 1300:$0.5970
  • 700:$0.6191
  • 600:$0.6421
IRFB3306PBF
DISTI # IRFB3306PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1989In Stock
  • 1000:$1.0371
  • 500:$1.2288
  • 100:$1.5484
  • 50:$1.7082
  • 1:$2.0900
IRFB3306PBF
DISTI # C1S327400165503		Infineon Technologies AGTrans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		170
  • 50:$0.7080
  • 10:$0.8300
  • 5:$0.8900
IRFB3306PBF
DISTI # C1S322000488386		Infineon Technologies AGTrans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		4463
  • 2000:$0.7300
  • 1000:$0.7870
  • 500:$1.0200
  • 100:$1.1100
  • 25:$1.3600
  • 5:$1.6700
IRFB3306PBF
DISTI # V99:2348_13890250		Infineon Technologies AGTrans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube1199
  • 2000:$0.6575
  • 1000:$0.7206
  • 500:$0.8895
  • 100:$1.0046
  • 10:$1.1895
  • 1:$1.3655
IRFB3306PBF
DISTI # IRFB3306PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB (Alt: IRFB3306PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 1000
  • 1000:$0.7201
  • 2000:$0.6905
  • 3000:$0.6812
  • 5000:$0.6546
  • 10000:$0.6462
  • 25000:$0.6301
  • 50000:$0.6147
IRFB3306PBF
DISTI # IRFB3306PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3306PBF)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 550
  • 600:$0.6689
  • 700:$0.6449
  • 1300:$0.6219
  • 3000:$0.6009
  • 6000:$0.5899
IRFB3306PBF
DISTI # SP001556002		Infineon Technologies AGTrans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB (Alt: SP001556002)
RoHS: Compliant
Min Qty: 1		Europe - 50
  • 1:€0.9869
  • 10:€0.8769
  • 25:€0.7899
  • 50:€0.7179
  • 100:€0.6579
  • 500:€0.6069
  • 1000:€0.5639
IRFB3306PBF
DISTI # 61M6828		Infineon Technologies AGMOSFET, N, 60V, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes239
  • 1:$1.5200
  • 10:$1.2900
  • 100:$1.0400
  • 500:$0.9580
  • 1000:$0.8580
  • 2500:$0.6970
  • 5000:$0.6740
IRFB3306PBF
DISTI # 70017949		Infineon Technologies AGMOSFET,N Ch.,60V,160A,4.2 MOHM,85 NC QG,TO-220AB,Pb-Free
RoHS: Compliant		0
  • 1:$3.1400
  • 10:$2.7700
  • 100:$2.4200
  • 500:$2.1000
  • 1000:$1.8500
IRFB3306PBF
DISTI # 942-IRFB3306PBF		Infineon Technologies AGMOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg
RoHS: Compliant		1844
  • 1:$1.7100
  • 10:$1.4600
  • 100:$1.1700
  • 500:$1.0200
  • 1000:$0.8430
  • 2000:$0.7850
IRFB3306PBF
DISTI # 6886910P		Infineon Technologies AGMOSFET N-CHANNEL 60V 160A HEXFET TO220AB, TU10644
  • 26:£0.8750
IRFB3306PBF
DISTI # 1249003		Infineon Technologies AGMOSFET N-CHANNEL 60V 160A HEXFET TO220AB, TU1700
  • 50:£1.0100
  • 250:£0.7890
  • 1000:£0.5670
  • 2500:£0.5280
IRFB3306PBF
DISTI # 6886910		Infineon Technologies AGMOSFET N-CHANNEL 60V 160A HEXFET TO220AB, PK180
  • 2:£1.2450
  • 26:£0.8750
IRFB3306PBF
DISTI # IRFB3306PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,160A,230W,TO220AB448
  • 1:$1.2700
  • 3:$1.1600
  • 10:$0.9400
  • 100:$0.8300
IRFB3306PBF
DISTI # IRFB3306PBF		Infineon Technologies AGN-Ch 60V 120A 230W 0,0042R TO220AB
RoHS: Compliant		1090
  • 10:€0.9475
  • 50:€0.7075
  • 200:€0.6475
  • 500:€0.6235
IRFB3306PBFInfineon Technologies AGINSTOCK621
    IRFB3306PBF
    DISTI # XSLY00000006704    		INFINEON/IRTO-220AB
    RoHS: Compliant    		1440
    • 950:$0.7429
    • 1440:$0.6933
    IRFB3306PBF
    DISTI # XSFP00000008941    		Infineon Technologies AGPowerField-EffectTransistor,173AI(D),60V,0.0033ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB
    RoHS: Compliant    		108319
    • 150:$1.6000
    • 108319:$1.4500
    IRFB3306PBF
    DISTI # 1436951    		Infineon Technologies AGMOSFET, N, 60V, TO-220AB
    RoHS: Compliant    		239
    • 1:$2.7100
    • 10:$2.3200
    • 100:$1.8500
    • 500:$1.6200
    • 1000:$1.3400
    • 2500:$1.2400
    IRFB3306PBFInfineon Technologies AG60V,4.2m,160A,N-Channel Power MOSFET500
    • 1:$1.2500
    • 100:$1.0400
    • 500:$0.9200
    • 1000:$0.9000
    IRFB3306PBF
    DISTI # 1436951    		Infineon Technologies AGMOSFET, N, 60V, TO-220AB
    RoHS: Compliant    		489
    • 5:£1.2100
    • 25:£0.8840
    • 100:£0.8410
    • 250:£0.7970
    • 500:£0.7800
    Imagen Parte # Descripción
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    Mfr.#: 24CW1280T-I/ST

    OMO.#: OMO-24CW1280T-I-ST-MICROCHIP-TECHNOLOGY

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IRFB3306PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,71 US$
    1,71 US$
    10
    1,45 US$
    14,50 US$
    100
    1,16 US$
    116,00 US$
    500
    1,01 US$
    505,00 US$
    1000
    0,84 US$
    843,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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