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IRF540ZPBF

IRF540ZPBF
Mfr. #:
IRF540ZPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF540ZPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF540ZPBF DatasheetIRF540ZPBF Datasheet (P4-P6)IRF540ZPBF Datasheet (P7-P9)IRF540ZPBF Datasheet (P10-P12)IRF540ZPBF Datasheet (P13)
ECAD Model:
Más información:
IRF540ZPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
36 A
Rds On - Resistencia de la fuente de drenaje:
26.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
42 nC
Pd - Disipación de energía:
92 W
Configuración:
Único
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001561896
Unidad de peso:
0.211644 oz
Tags
IRF540Z, IRF540, IRF54, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***s
    L***s
    PT

    ok

    2019-05-16
    I***v
    I***v
    US

    The product corresponds to the description.

    2019-03-28
    R***v
    R***v
    RU

    On each seal with a nominal value. I advise

    2019-04-07
    E**k
    E**k
    NZ

    thank you

    2019-07-07
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V
*** Source Electronics
Trans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 36A TO-220AB
***ure Electronics
Single N-Channel 100 V 26.5 mOhm 42 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 92 W
***ment14 APAC
MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:26.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
IRF540N/Z Advanced HEXFET® Power MOSFETs
Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRF540ZPBF
DISTI # V99:2348_13889617		Infineon Technologies AGTrans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		833
  • 1:$0.8897
IRF540ZPBF
DISTI # IRF540ZPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 36A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1065In Stock
  • 1000:$0.5031
  • 500:$0.6372
  • 100:$0.8217
  • 10:$1.0400
  • 1:$1.1700
IRF540ZPBF
DISTI # 30273480		Infineon Technologies AGTrans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		105354
  • 1250:$0.3312
  • 300:$0.3600
  • 32:$0.3888
IRF540ZPBF
DISTI # 27566171		Infineon Technologies AGTrans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		833
  • 500:$0.4740
  • 100:$0.5915
  • 19:$0.7412
IRF540ZPBF
DISTI # IRF540ZPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF540ZPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$0.6139
  • 10:$0.5579
  • 25:$0.5559
  • 50:$0.5549
  • 100:$0.4849
  • 500:$0.4129
  • 1000:$0.3689
IRF540ZPBF
DISTI # 37J1436		Infineon Technologies AGN CHANNEL MOSFET, 100V, 36A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes164
  • 1:$1.0100
  • 10:$0.8540
  • 100:$0.6560
  • 500:$0.5800
  • 1000:$0.4580
  • 2500:$0.4060
  • 10000:$0.3910
IRF540ZPBF.
DISTI # 26AC0600		Infineon Technologies AGN CHANNEL MOSFET, 100V, 36A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
  • 1:$1.0300
  • 10:$0.8710
  • 100:$0.6690
  • 500:$0.5800
  • 1000:$0.4580
  • 2500:$0.4060
  • 10000:$0.3910
IRF540ZPBF
DISTI # 70016922		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 21 Milliohms,ID 36A,TO-220AB,PD 92W,gFS 36V
RoHS: Compliant		0
  • 900:$2.0400
IRF540ZPBF
DISTI # 942-IRF540ZPBF		Infineon Technologies AGMOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg
RoHS: Compliant		2967
  • 1:$1.0100
  • 10:$0.8540
  • 100:$0.6560
  • 500:$0.5800
  • 1000:$0.4580
IRF540ZPBFInfineon Technologies AGSingle N-Channel 100 V 26.5 mOhm 42 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		5784Tube
  • 25:$0.4850
  • 300:$0.4350
  • 1250:$0.3850
IRF540ZPBF
DISTI # 1249001		Infineon Technologies AGMOSFET N-CHANNEL 100V 36A HEXFET TO220AB, TU400
  • 50:£0.6300
  • 250:£0.4740
  • 1000:£0.3310
  • 2500:£0.2940
IRF540ZPBF
DISTI # 6886872		Infineon Technologies AGMOSFET N-CHANNEL 100V 36A HEXFET TO220AB, PK2688
  • 2:£1.2100
  • 26:£0.7000
IRF540ZPBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB3
  • 4:$1.4700
  • 1:$1.9600
IRF540ZPBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB360
  • 325:$1.6500
  • 151:$1.8500
  • 1:$4.0000
IRF540ZPBF
DISTI # 8210667		Infineon Technologies AGMOSFET, N, 100V, 36A, TO-220
RoHS: Compliant		3808
  • 5:£0.7440
  • 25:£0.6490
  • 100:£0.5120
  • 250:£0.4880
  • 500:£0.4520
IRF540ZPBF
DISTI # C1S327400075972		Infineon Technologies AGTrans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		819
  • 100:$0.3990
  • 50:$0.4500
  • 10:$0.5790
IRF540ZPBF
DISTI # C1S322000480986		Infineon Technologies AGMOSFETs
RoHS: Compliant		105354
  • 1000:$0.5400
  • 500:$0.5880
  • 100:$0.7160
  • 50:$0.8020
  • 25:$0.8830
  • 5:$2.2000
IRF540ZPBF
DISTI # 8210667		Infineon Technologies AGMOSFET, N, 100V, 36A, TO-220
RoHS: Compliant		4642
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.9180
  • 1000:$0.7250
  • 2000:$0.6430
  • 10000:$0.6190
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XBC-M5-UT-001

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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de IRF540ZPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,00 US$
1,00 US$
10
0,85 US$
8,54 US$
100
0,66 US$
65,60 US$
500
0,58 US$
290,00 US$
1000
0,46 US$
458,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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