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FDG8842CZ

FDG8842CZ
Mfr. #:
FDG8842CZ
Fabricante:
ON Semiconductor
Descripción:
MOSFET N/P-CH 30V/25V SC70-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDG8842CZ Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
FDG8842CZ más información
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET: matrices
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.000988 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
6-TSSOP, SC-88, SOT-363
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
SC-70-6
Configuración
Canal N Canal P
Tipo FET
Canal N y P
Potencia máxima
300mW
Tipo transistor
1 N-Channel 1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
30V, 25V
Entrada-Capacitancia-Ciss-Vds
120pF @ 10V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
750mA, 410mA
Rds-On-Max-Id-Vgs
400 mOhm @ 750mA, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Puerta-Carga-Qg-Vgs
1.44nC @ 4.5V
Disipación de potencia Pd
360 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
1 nS 16 nS
Hora de levantarse
1 nS 16 nS
Vgs-Puerta-Fuente-Voltaje
12 V - 8 V
Id-corriente-de-drenaje-continua
750 mA
Vds-Drain-Source-Breakdown-Voltage
30 V - 25 V
Resistencia a la fuente de desagüe de Rds
400 mOhms 1.1 Ohms
Polaridad del transistor
Canal N Canal P
Tiempo de retardo de apagado típico
9 nS 35 nS
Tiempo de retardo de encendido típico
4 nS 6 nS
Modo de canal
Mejora
Tags
FDG884, FDG88, FDG8, FDG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N/P-CH 30V/25V 0.75A/0.41A 6-Pin SC-70 T/R
***ure Electronics
Dual N & P-Channel 400 mOhm Complementary PowerTrench MOSFET-SC-70-6
***rchild Semiconductor
These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDG8842CZ
DISTI # FDG8842CZTR-ND		ON SemiconductorMOSFET N/P-CH 30V/25V SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1899
FDG8842CZ
DISTI # FDG8842CZCT-ND		ON SemiconductorMOSFET N/P-CH 30V/25V SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2146
  • 500:$0.2777
  • 100:$0.3786
  • 10:$0.5050
  • 1:$0.6000
FDG8842CZ
DISTI # FDG8842CZDKR-ND		ON SemiconductorMOSFET N/P-CH 30V/25V SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2146
  • 500:$0.2777
  • 100:$0.3786
  • 10:$0.5050
  • 1:$0.6000
FDG8842CZ
DISTI # FDG8842CZ		ON SemiconductorTrans MOSFET N/P-CH 30V/25V 0.75A/0.41A 6-Pin SC-70 T/R (Alt: FDG8842CZ)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    FDG8842CZ
    DISTI # FDG8842CZ    		ON SemiconductorTrans MOSFET N/P-CH 30V/25V 0.75A/0.41A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG8842CZ)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 6000:$0.1469
    • 12000:$0.1459
    • 18000:$0.1459
    • 30000:$0.1459
    • 60000:$0.1449
    FDG8842CZ
    DISTI # 25R7489    		ON SemiconductorTrans MOSFET N/P-CH 30V/25V 0.75A/0.41A 6-Pin SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 25R7489)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.4900
    • 25:$0.4030
    • 50:$0.3250
    • 100:$0.2460
    • 250:$0.2270
    • 500:$0.2090
    • 1000:$0.1900
    FDG8842CZ
    DISTI # 25R7489    		ON SemiconductorMOSFET, N & P CHANNEL, 30V, .25/.87OHM, 750mA, SC-70-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:750mA,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$0.4900
    • 25:$0.4030
    • 50:$0.3250
    • 100:$0.2460
    • 250:$0.2270
    • 500:$0.2090
    • 1000:$0.1900
    FDG8842CZ
    DISTI # 52M3171    		ON SemiconductorMOSFET, N & P CHANNEL, 30V, .25/.87OHM, 750mA, SC-70, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:750mA,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$0.1620
    • 3000:$0.1620
    FDG8842CZ
    DISTI # 512-FDG8842CZ    		ON SemiconductorMOSFET Q1:30V/Q2: -25V Cmpl PowerTrench MOSFET
    RoHS: Compliant    		0
    • 1:$0.4900
    • 10:$0.4030
    • 100:$0.2460
    • 1000:$0.1900
    • 3000:$0.1620
    FDG8842CZ
    DISTI # 1498955    		ON SemiconductorMOSFET, DUAL, NP, SMD, SC70-6
    RoHS: Compliant    		0
    • 1:$0.7750
    • 10:$0.6380
    • 100:$0.3900
    • 1000:$0.3010
    • 3000:$0.2570
    FDG8842CZ
    DISTI # 1498955RL    		ON SemiconductorMOSFET, DUAL, NP, SMD, SC70-6
    RoHS: Compliant    		0
    • 1:$0.7750
    • 10:$0.6380
    • 100:$0.3900
    • 1000:$0.3010
    • 3000:$0.2570
    FDG8842CZ
    DISTI # FDG8842CZ    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		136
      Imagen Parte # Descripción
      FDG8842CZ

      Mfr.#: FDG8842CZ

      OMO.#: OMO-FDG8842CZ

      		 MOSFET Q1:30V/Q2: -25V Cmpl PowerTrench MOSFET
      FDG8850NZ

      Mfr.#: FDG8850NZ

      OMO.#: OMO-FDG8850NZ-ON-SEMICONDUCTOR

      		 MOSFET 2N-CH 30V 0.75A SC70-6
      FDG8842CZ

      Mfr.#: FDG8842CZ

      OMO.#: OMO-FDG8842CZ-ON-SEMICONDUCTOR

      		 MOSFET N/P-CH 30V/25V SC70-6
      FDG855N

      Mfr.#: FDG855N

      OMO.#: OMO-FDG855N-1190

      		 Nuevo y original
      FDG8842CZ , 1N5232B-TR

      Mfr.#: FDG8842CZ , 1N5232B-TR

      OMO.#: OMO-FDG8842CZ-1N5232B-TR-1190

      		 Nuevo y original
      FDG8842CZ(PB FREE)

      Mfr.#: FDG8842CZ(PB FREE)

      OMO.#: OMO-FDG8842CZ-PB-FREE--1190

      		 Nuevo y original
      FDG8842CZ-NL

      Mfr.#: FDG8842CZ-NL

      OMO.#: OMO-FDG8842CZ-NL-1190

      		 Nuevo y original
      FDG8850

      Mfr.#: FDG8850

      OMO.#: OMO-FDG8850-1190

      		 Nuevo y original
      FDG8850NZ-NL

      Mfr.#: FDG8850NZ-NL

      OMO.#: OMO-FDG8850NZ-NL-1190

      		 Nuevo y original
      FDG8850NZ-CUT TAPE

      Mfr.#: FDG8850NZ-CUT TAPE

      OMO.#: OMO-FDG8850NZ-CUT-TAPE-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de FDG8842CZ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,20 US$
      0,20 US$
      10
      0,19 US$
      1,94 US$
      100
      0,18 US$
      18,39 US$
      500
      0,17 US$
      86,85 US$
      1000
      0,16 US$
      163,50 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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