DMN3008SFG-7

DMN3008SFG-7
Mfr. #:
DMN3008SFG-7
Fabricante:
Diodes Incorporated
Descripción:
Darlington Transistors MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMN3008SFG-7 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
DMN3008SFG-7 más información
Atributo del producto
Valor de atributo
Fabricante
Diodos incorporados
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
DMN3008
embalaje
Carrete
Unidad de peso
0.002540 oz
Estilo de montaje
SMD / SMT
Nombre comercial
PowerDI
Paquete-Estuche
PowerDI-3333
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
28.4 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
17.6 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
2.3 V
Resistencia a la fuente de desagüe de Rds
4.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
63.7 ns
Tiempo de retardo de encendido típico
5.7 ns
Qg-Gate-Charge
41 nC
Modo de canal
Mejora
Tags
DMN3008SF, DMN3008, DMN300, DMN30, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DMN3008 Enhancement Mode MOSFET
Diodes Incorporated DMN3008 30V N-Channel Enhancement Mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance. Offered in the small form factor, thermally efficient POWERDI®3333-8 case, DMN3008 supports higher density end products. Qualified to AEC-Q101 Standards for High Reliability, DMN3008 is ideal for high-efficiency power management applications such as backlighting, power management functions, and DC-DC converters.Learn More
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Parte # Mfg. Descripción Valores Precio
DMN3008SFG-7
DISTI # DMN3008SFG-7DICT-ND
Diodes IncorporatedMOSFET N-CH 30V 17.6A POWERDI
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1475In Stock
  • 1000:$0.3045
  • 500:$0.3807
  • 100:$0.5139
  • 10:$0.6660
  • 1:$0.7600
DMN3008SFG-7
DISTI # DMN3008SFG-7DIDKR-ND
Diodes IncorporatedMOSFET N-CH 30V 17.6A POWERDI
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1475In Stock
  • 1000:$0.3045
  • 500:$0.3807
  • 100:$0.5139
  • 10:$0.6660
  • 1:$0.7600
DMN3008SFG-7
DISTI # DMN3008SFG-7DITR-ND
Diodes IncorporatedMOSFET N-CH 30V 17.6A POWERDI
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$0.2680
DMN3008SFG-7
DISTI # DMN3008SFG-7
Diodes IncorporatedTrans MOSFET N-CH 30V 17.6A 8-Pin PowerDI T/R - Tape and Reel (Alt: DMN3008SFG-7)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$0.2109
  • 4000:$0.1999
  • 8000:$0.1909
  • 12000:$0.1819
  • 20000:$0.1779
DMN3008SFG-7
DISTI # 621-DMN3008SFG-7
Diodes IncorporatedMOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
RoHS: Compliant
709
  • 1:$0.6300
  • 10:$0.5210
  • 100:$0.3360
  • 1000:$0.2690
DMN3008SFG-13
DISTI # 621-DMN3008SFG-13
Diodes IncorporatedMOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
RoHS: Compliant
0
  • 1:$0.6300
  • 10:$0.5210
  • 100:$0.3360
  • 1000:$0.2690
DMN3008SFG-7
DISTI # 9211072P
Zetex / Diodes Inc30V N-CHANNEL MOSFET POWERDI, RL880
  • 100:£0.2790
  • 500:£0.2510
  • 1000:£0.2240
  • 2500:£0.2040
Imagen Parte # Descripción
DMN3009SK3-13

Mfr.#: DMN3009SK3-13

OMO.#: OMO-DMN3009SK3-13

MOSFET MOSFETBVDSS: 25V-30V
DMN3008SFG-7

Mfr.#: DMN3008SFG-7

OMO.#: OMO-DMN3008SFG-7

MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
DMN3009LFV-7

Mfr.#: DMN3009LFV-7

OMO.#: OMO-DMN3009LFV-7

MOSFET MOSFETBVDSS: 25V-30V
DMN3009LFV-13

Mfr.#: DMN3009LFV-13

OMO.#: OMO-DMN3009LFV-13

MOSFET MOSFETBVDSS: 25V-30V
DMN3008SFG-13

Mfr.#: DMN3008SFG-13

OMO.#: OMO-DMN3008SFG-13

MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
DMN3008SCP10-7

Mfr.#: DMN3008SCP10-7

OMO.#: OMO-DMN3008SCP10-7

MOSFET MOSFETBVDSS: 25V-30V
DMN3009SFGQ-13

Mfr.#: DMN3009SFGQ-13

OMO.#: OMO-DMN3009SFGQ-13

MOSFET MOSFET BVDSS: 25V-30V
DMN3009SFG-7

Mfr.#: DMN3009SFG-7

OMO.#: OMO-DMN3009SFG-7-DIODES

30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3008SFG-7

Mfr.#: DMN3008SFG-7

OMO.#: OMO-DMN3008SFG-7-DIODES

Darlington Transistors MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
DMN3008SFG-13

Mfr.#: DMN3008SFG-13

OMO.#: OMO-DMN3008SFG-13-DIODES

MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de DMN3008SFG-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,27 US$
0,27 US$
10
0,25 US$
2,54 US$
100
0,24 US$
24,02 US$
500
0,23 US$
113,40 US$
1000
0,21 US$
213,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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