PSMN8R5-108ES

PSMN8R5-108ES
Mfr. #:
PSMN8R5-108ES
Fabricante:
Rochester Electronics, LLC
Descripción:
Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PSMN8R5-108ES Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Semiconductores NXP
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Unidad de peso
0.084199 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
I2PAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
263 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
43 ns
Hora de levantarse
35 ns
Vgs-Puerta-Fuente-Voltaje
4.4 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
108 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
8.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
87 ns
Tiempo de retardo de encendido típico
20 ns
Qg-Gate-Charge
111 nC
Modo de canal
Mejora
Tags
PSMN8R5-108, PSMN8R5-1, PSMN8R5, PSMN8, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 108V, 100A, TO-262-3
***nell
MOSFET, N CH, 108V, 100A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:108V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-226; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
Parte # Mfg. Descripción Valores Precio
PSMN8R5-108ESQ
DISTI # 568-11432-5-ND
NXP SemiconductorsMOSFET N-CH 108V 100A I2PAK
RoHS: Compliant
Min Qty: 5000
Container: Tube
Limited Supply - Call
    PSMN8R5-108ES
    DISTI # 771-PSMN8R5-108ES
    NexperiaMOSFET N-Channel 100V 8.5mohm Fet
    RoHS: Compliant
    0
    • 5000:$1.1500
    PSMN8R5-108ESQ
    DISTI # 771-PSMN8R5-108ESQ
    NexperiaMOSFET PSMN8R5-108ES/I2PAK/STANDARD M
    RoHS: Compliant
    0
      PSMN8R5-108ESNXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      466
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ES127NXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      167
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ESQ127NXP SemiconductorsNow Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Not Compliant
      330
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      Imagen Parte # Descripción
      PSMN8R2-80YS,115

      Mfr.#: PSMN8R2-80YS,115

      OMO.#: OMO-PSMN8R2-80YS-115

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      PSMN8R0-30YLC,115

      Mfr.#: PSMN8R0-30YLC,115

      OMO.#: OMO-PSMN8R0-30YLC-115-NXP-SEMICONDUCTORS

      MOSFET N-CH 30V 54A LL LFPAK
      PSMN8R0-80YLX

      Mfr.#: PSMN8R0-80YLX

      OMO.#: OMO-PSMN8R0-80YLX-NEXPERIA

      MOSFET N-CH 80V 100A LFPAK56
      PSMN8R0-40PS

      Mfr.#: PSMN8R0-40PS

      OMO.#: OMO-PSMN8R0-40PS-1190

      MOSFET Transistor, N Channel, 77 A, 40 V, 6.2 mohm, 10 V, 3 V RoHS Compliant: Yes
      PSMN8R0-40PS127

      Mfr.#: PSMN8R0-40PS127

      OMO.#: OMO-PSMN8R0-40PS127-1190

      Now Nexperia PSMN8R0-40PS - Power Field-Effect Transistor, 77A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      PSMN8R5-100PSQ

      Mfr.#: PSMN8R5-100PSQ

      OMO.#: OMO-PSMN8R5-100PSQ-NEXPERIA

      IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH
      PSMN8R0-40BS,118

      Mfr.#: PSMN8R0-40BS,118

      OMO.#: OMO-PSMN8R0-40BS-118-NEXPERIA

      MOSFET N-CH 40V 77A D2PAK
      PSMN8R5-108ESQ127

      Mfr.#: PSMN8R5-108ESQ127

      OMO.#: OMO-PSMN8R5-108ESQ127-1190

      Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      PSMN8R5-100PSFQ

      Mfr.#: PSMN8R5-100PSFQ

      OMO.#: OMO-PSMN8R5-100PSFQ-NEXPERIA

      MOSFET N-CH 100V 98A TO220AB
      PSMN8R9-100BSEJ

      Mfr.#: PSMN8R9-100BSEJ

      OMO.#: OMO-PSMN8R9-100BSEJ-NEXPERIA

      PSMN8R9-100BSE/SOT404/D2PAK
      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de PSMN8R5-108ES es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,23 US$
      1,23 US$
      10
      1,17 US$
      11,68 US$
      100
      1,11 US$
      110,70 US$
      500
      1,05 US$
      522,75 US$
      1000
      0,98 US$
      984,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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