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PSMN8R2-80YS,115

Mfr. #:: PSMN8R2-80YS,115
Fabricante:: Nexperia
Descripción:: MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: PSMN8R2-80YS,115 Ficha de datos
ECAD Model:

Disponibilidad

Valores:: Available
En orden:: 1984
Ingrese la cantidad:

El precio actual de PSMN8R2-80YS,115 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,01 US$~~; ~~1,01 US$~~

10: ~~0,86 US$~~; ~~8,63 US$~~

100: ~~0,66 US$~~; ~~66,30 US$~~

500: ~~0,59 US$~~; ~~293,00 US$~~

1000: ~~0,46 US$~~; ~~462,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Atributo del producto
Valor de atributo

Fabricante:: Nexperia

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: LFPAK56-5

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 80 V

Id - Corriente de drenaje continua:: 82 A

Rds On - Resistencia de la fuente de drenaje:: 13.4 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 1 V

Vgs - Voltaje puerta-fuente:: 10 V

Qg - Carga de puerta:: 55 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 175 C

Pd - Disipación de energía:: 130 W

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Carrete

Tipo de transistor:: 1 N-Channel

Marca:: Nexperia

Otoño:: 16 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 22 ns

Cantidad de paquete de fábrica:: 1500

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 51 ns

Tiempo típico de retardo de encendido:: 25 ns

Unidad de peso:: 0.003002 oz

Tags: PSMN8R2, PSMN8, PSMN, PSM

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PSMN8R2-80YS,115 Descripción

***Components: In a Pack of 5, N-Channel MOSFET, 82 A, 80 V, 4-Pin SOT-669 Nexperia PSMN8R2-80YS,115

***peria: PSMN8R2-80YS - N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET

***ure Electronics: PSMN8R2 Series 80 V 20 mOhm 55 nC SMT N-Channel Standard Level MOSFET - LFPAK-4

***et: Trans MOSFET N-CH 80V 82A 5-Pin(4+Tab) LFPAK T/R

***ical: N-CHANNEL LFPAK 80 V 8.5 M OHM STANDARD LEVEL MOSF

***i-Key: MOSFET N-CH 80V 82A LFPAK

***ment14 APAC: MOSFET, N CH, 80V, 82A, 4-SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:80V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V

***ark: MOSFET, N CH, 80V, 82A, 4-SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:80V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes

***nell: MOSFET, CANALE N, 80V, 82A, SOT669; Polarità Transistor:Canale N; Corrente Continua di Drain Id:82A; Tensione Drain Source Vds:80V; Resistenza di Attivazione Rds(on):0.0058ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:130W; Modello Case Transistor:SOT-669; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:82A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:20V

PSMN8R2-80YS,115 Más información

PSMN N-Channel MOSFETs: Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
PSMN8R2-80YS,115 DISTI # V36:1790_06540995	Nexperia	PSMN8R2-80YS/SOT669/LFPAK	3000
PSMN8R2-80YS,115 DISTI # V72:2272_06540995	Nexperia	PSMN8R2-80YS/SOT669/LFPAK	2950	1000:$0.4611 500:$0.5838 250:$0.6180 100:$0.6598 25:$0.7705 10:$0.9419 1:$1.1000
PSMN8R2-80YS,115 DISTI # 1727-4272-1-ND	Nexperia	MOSFET N-CH 80V 82A LFPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13233In Stock	500:$0.6630 100:$0.8550 10:$1.0820 1:$1.2200
PSMN8R2-80YS,115 DISTI # 1727-4272-6-ND	Nexperia	MOSFET N-CH 80V 82A LFPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13233In Stock	500:$0.6630 100:$0.8550 10:$1.0820 1:$1.2200
PSMN8R2-80YS,115 DISTI # 1727-4272-2-ND	Nexperia	MOSFET N-CH 80V 82A LFPAK RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	12000In Stock	10500:$0.4337 7500:$0.4506 3000:$0.4743 1500:$0.5082
PSMN8R2-80YS,115 DISTI # 33633984	Nexperia	PSMN8R2-80YS/SOT669/LFPAK	3000	1500:$0.3999
PSMN8R2-80YS,115 DISTI # 33156721	Nexperia	PSMN8R2-80YS/SOT669/LFPAK	2950	3000:$0.4291 1000:$0.4611 500:$0.5838 250:$0.6180 100:$0.6598 25:$0.7705 17:$0.8563
PSMN8R2-80YS,115 DISTI # PSMN8R2-80YS,115	Nexperia	Trans MOSFET N-CH 80V 82A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN8R2-80YS,115) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 13500	15000:€0.3999 9000:€0.4299 6000:€0.4659 3000:€0.5089 1500:€0.6219
PSMN8R2-80YS,115 DISTI # PSMN8R2-80YS,115	Nexperia	Trans MOSFET N-CH 80V 82A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN8R2-80YS,115) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	15000:$0.3709 9000:$0.3799 6000:$0.3889 3000:$0.3999 1500:$0.4049
PSMN8R2-80YS,115 DISTI # PSMN8R2-80YS,115	Nexperia	Trans MOSFET N-CH 80V 82A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN8R2-80YS,115) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.3850 75000:$0.3949 30000:$0.4000 15000:$0.4053 9000:$0.4162 6000:$0.4278 3000:$0.4400
PSMN8R2-80YS,115 DISTI # 62R9344	Nexperia	MOSFET Transistor, N Channel, 82 A, 80 V, 5.8 mohm, 10 V, 3 V RoHS Compliant: Yes	1808	1000:$0.4670 500:$0.5920 250:$0.6310 100:$0.6700 50:$0.7370 25:$0.8040 10:$0.8720 1:$1.0300
PSMN8R2-80YS,115 DISTI # 771-PSMN8R2-80YS,115	Nexperia	MOSFET N-CH 80V 8.5 mOhm Standard MOSFET RoHS: Compliant	5179	1:$1.0100 10:$0.8630 100:$0.6630 500:$0.5860 1000:$0.4620
PSMN8R2-80YS,115 DISTI # 7983031P	Nexperia	TRENCH MOSFET N-CHANNEL 80V 82A SOT669, RL	1500	750:£0.7700 375:£0.8520 75:£0.9320 15:£1.0120
PSMN8R2-80YS,115 DISTI # 1785646	Nexperia	MOSFET, N CH, 80V, 82A, SOT669 RoHS: Compliant	1808	750:$0.6480 500:$0.6930 100:$0.8370 25:$1.0100 10:$1.3900 1:$1.6100
PSMN8R2-80YS,115 DISTI # 1785646RL	Nexperia	MOSFET, N CH, 80V, 82A, SOT669 RoHS: Compliant	0	750:$0.6480 500:$0.6930 100:$0.8370 25:$1.0100 10:$1.3900 1:$1.6100
PSMN8R2-80YS,115 DISTI # 1785646	Nexperia	MOSFET, N CH, 80V, 82A, SOT669 RoHS: Compliant	1808	500:£0.4720 250:£0.5040 100:£0.5350 25:£0.6960 5:£0.7770
PSMN8R2-80YS,115 DISTI # XSKDRABS0029994	Nexperia	RectifierDiode,Schottky,1Phase,2Element,2A,30VV(RRM),Silicon RoHS: Compliant	10500 in Stock0 on Order	10500:$0.5280 1500:$0.5657

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