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SI9945BDY-T1-GE3

SI9945BDY-T1-GE3
Mfr. #:
SI9945BDY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 60V 5.3A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI9945BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI9945BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI9945BDY-GE3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Dual Dual Drain
Tipo FET
2 N-Channel (Dual)
Potencia máxima
3.1W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
60V
Entrada-Capacitancia-Ciss-Vds
665pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
5.3A
Rds-On-Max-Id-Vgs
58 mOhm @ 4.3A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
20nC @ 10V
Disipación de potencia Pd
2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
65 ns 15 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
4.3 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
58 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
15 ns 20 ns
Tiempo de retardo de encendido típico
15 ns 10 ns
Modo de canal
Mejora
Tags
SI9945BDY-T1-G, SI9945BDY-T, SI9945BD, SI9945B, SI9945, SI994, SI99, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
***th Star Micro
Transistor MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
***ure Electronics
SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8
***ied Electronics & Automation
MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W
***ical
Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R
***C
Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC
***ark
Dual N-Channel 60-V (D-S) Mosfet Rohs Compliant: No
***i-Key
MOSFET 2N-CH 60V 5.3A 8-SOIC
***ponent Sense
NFET 60V 4.7 to 5.3A 0.058 to 0.072Oh
***ukat
2xN-Ch 60V 5,3A 2,0W 0,058R SO8
***ronik
DUAL N-CH 60V 5,3A 58mOhm SO-8
***
DUAL N-CHANNEL 60-V (D-S)
***nell
MOSFET, NN CH, 60V, 5.3A, 8SOIC; Module Configuration:Dual N Channel; Transistor Polarity:N-Channel; Current Id Max:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8
***ment14 APAC
MOSFET, NN CH, 60V, 5.3A, 8SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):46mohm; Power Dissipation Pd:3.1W
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descripción Valores Precio
SI9945BDY-T1-GE3
DISTI # V72:2272_09216529		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		471
  • 250:$0.4802
  • 100:$0.4815
  • 25:$0.5858
  • 10:$0.5880
  • 1:$0.6788
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13862In Stock
  • 1000:$0.4331
  • 500:$0.5414
  • 100:$0.7308
  • 10:$0.9470
  • 1:$1.0800
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13862In Stock
  • 1000:$0.4331
  • 500:$0.5414
  • 100:$0.7308
  • 10:$0.9470
  • 1:$1.0800
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		12500In Stock
  • 2500:$0.3810
SI9945BDY-T1-GE3
DISTI # 30722949		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		471
  • 250:$0.4802
  • 100:$0.4815
  • 25:$0.5858
  • 22:$0.5880
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI9945BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 127295
  • 2500:€0.6009
  • 5000:€0.4099
  • 10000:€0.3529
  • 15000:€0.3259
  • 25000:€0.3029
SI9945BDY-T1-GE3
DISTI # SI9945BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI9945BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI9945BDY-T1-GE3
    DISTI # SI9945BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9945BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.3539
    • 5000:$0.3439
    • 10000:$0.3299
    • 15000:$0.3209
    • 25000:$0.3119
    SI9945BDY-T1-GE3
    DISTI # 72R4255    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 72R4255)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$1.0900
    • 10:$0.9020
    • 25:$0.8380
    • 50:$0.7740
    • 100:$0.7100
    • 250:$0.6660
    • 500:$0.6200
    SI9945BDY-T1-GE3
    DISTI # 72R4255    		Vishay IntertechnologiesMOSFET, DUAL N CH, 60V, 5.3A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):46mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:2.5V , RoHS Compliant: Yes1093
    • 1:$1.0900
    • 10:$0.9030
    • 25:$0.8380
    • 50:$0.7740
    • 100:$0.7090
    • 250:$0.6660
    • 500:$0.6210
    SI9945BDY-T1-GE3.
    DISTI # 26AC3355    		Vishay IntertechnologiesDUAL N-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO0
    • 1:$0.3570
    • 2500:$0.3490
    • 5000:$0.3400
    • 10000:$0.3270
    SI9945BDY-T1-GE3
    DISTI # 70026454    		Vishay SiliconixMOSFET,Dual N-Ch,Vds 60V,Vgs +/- 20V,Rds(on) 46mohm,Id 5.3,SO-8,Pd 3.1W
    RoHS: Compliant    		2470
    • 1:$0.4880
    • 25:$0.4630
    • 100:$0.4390
    • 250:$0.4150
    • 500:$0.3980
    SI9945BDY-T1-GE3
    DISTI # 781-SI9945BDY-GE3    		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
    RoHS: Compliant    		11149
    • 1:$0.9000
    • 10:$0.7350
    • 100:$0.5640
    • 500:$0.4850
    • 1000:$0.3830
    • 2500:$0.3570
    • 5000:$0.3400
    • 10000:$0.3270
    SI9945BDY-T1-GE3Vishay IntertechnologiesSI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8
    RoHS: Compliant    		87500Reel
    • 2500:$0.3300
    SI9945BDY-T1-GE3
    DISTI # 7878995    		Vishay IntertechnologiesMOSFET DUAL N-CH 60V 5.3A/4.7A SOIC8, PK1140
    • 10:£0.5700
    • 30:£0.5020
    SI9945BDY-T1-GE3
    DISTI # 7878995P    		Vishay IntertechnologiesMOSFET DUAL N-CH 60V 5.3A/4.7A SOIC8, RL8590
    • 30:£0.5020
    SI9945BDYT1GE3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 800
      SI9945BDY-T1-GE3
      DISTI # TMOSP9460      		Vishay IntertechnologiesDUAL N-CH 60V 5,3A 58mOhm SO-8
      RoHS: Compliant      		Stock DE - 2500Stock US - 0
      • 2500:$0.3384
      SI9945BDY-T1-GE3
      DISTI # SI9945BDY-GE3      		Vishay Intertechnologies2xN-Ch 60V 5,3A 2,0W 0,058R SO8
      RoHS: Compliant      		8350
      • 50:€0.3990
      • 100:€0.3390
      • 500:€0.3090
      • 2500:€0.2985
      SI9945BDY-T1-GE3
      DISTI # XSFP00000015511      		Vishay SiliconixSmallSignalField-EffectTransistor,5.3AI(D),60V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
      RoHS: Compliant      		679731
      • 2500:$0.7100
      • 679731:$0.6455
      SI9945BDY-T1-GE3
      DISTI # 1794822      		Vishay IntertechnologiesMOSFET, NN CH, 60V, 5.3A, 8SOIC
      RoHS: Compliant      		13365
      • 5:£0.5810
      • 25:£0.5120
      • 100:£0.4350
      • 250:£0.4050
      • 500:£0.3740
      SI9945BDY-T1-GE3
      DISTI # 1794822RL      		Vishay IntertechnologiesMOSFET, NN CH, 60V, 5.3A, 8SOIC
      RoHS: Compliant      		0
      • 1:$1.4300
      • 10:$1.1700
      • 100:$0.8930
      • 500:$0.7680
      • 1000:$0.6060
      • 2500:$0.5650
      • 5000:$0.5380
      • 10000:$0.5180
      SI9945BDY-T1-GE3
      DISTI # 1794822      		Vishay IntertechnologiesMOSFET, NN CH, 60V, 5.3A, 8SOIC
      RoHS: Compliant      		7350
      • 1:$1.4300
      • 10:$1.1700
      • 100:$0.8930
      • 500:$0.7680
      • 1000:$0.6060
      • 2500:$0.5650
      • 5000:$0.5380
      • 10000:$0.5180
      SI9945BDY-T1-GE3Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
      RoHS: Compliant      		Americas - 35000
        SI9945BDY-T1-GE3.Vishay IntertechnologiesMOSFET DUAL N-CHANNEL 60-V (D-S)
        RoHS: Compliant        		Americas - 2025
        • 25:$0.4480
        SI9945BDY-T1-GE3Vishay Intertechnologies60V,5.3A,Dual N-Channel MOSFET90
        • 1:$0.6700
        • 100:$0.4700
        • 500:$0.3600
        • 1000:$0.3400
        SI9945BDY-T1-GE3
        DISTI # C1S806000594091        		Vishay IntertechnologiesMOSFETs471
        • 250:$0.4781
        • 100:$0.4795
        • 25:$0.5824
        • 10:$0.5848
        Imagen Parte # Descripción
        SI9945BDY-T1-GE3

        Mfr.#: SI9945BDY-T1-GE3

        OMO.#: OMO-SI9945BDY-T1-GE3

        		 MOSFET 60V Vds 20V Vgs SO-8
        SI9945BDY-T1-GE3-CUT TAPE

        Mfr.#: SI9945BDY-T1-GE3-CUT TAPE

        OMO.#: OMO-SI9945BDY-T1-GE3-CUT-TAPE-1190

        		 Nuevo y original
        SI9945BDY

        Mfr.#: SI9945BDY

        OMO.#: OMO-SI9945BDY-1190

        		 Nuevo y original
        SI9945BDY-T1

        Mfr.#: SI9945BDY-T1

        OMO.#: OMO-SI9945BDY-T1-1190

        		 Nuevo y original
        SI9945BDY-T1-E3

        Mfr.#: SI9945BDY-T1-E3

        OMO.#: OMO-SI9945BDY-T1-E3-1190

        		 Nuevo y original
        SI9945BDY-T1-GE3

        Mfr.#: SI9945BDY-T1-GE3

        OMO.#: OMO-SI9945BDY-T1-GE3-VISHAY

        		 MOSFET 2N-CH 60V 5.3A 8-SOIC
        SI9945BDY-T1-GE3.

        Mfr.#: SI9945BDY-T1-GE3.

        OMO.#: OMO-SI9945BDY-T1-GE3--1190

        		 DUAL N-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de SI9945BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,42 US$
        0,42 US$
        10
        0,40 US$
        4,01 US$
        100
        0,38 US$
        37,97 US$
        500
        0,36 US$
        179,30 US$
        1000
        0,34 US$
        337,50 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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