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AOT290L

AOT290L
Mfr. #:
AOT290L
Fabricante:
Alpha & Omega Semiconductor Inc
Descripción:
MOSFET N-CH 100V 140A TO220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AOT290L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOT290L DatasheetAOT290L Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
AOT290L, AOT290, AOT29, AOT2, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R
***enic
100V 18A 2.1W 3.5m´Î@10V20A 4.1V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ha & Omega Semiconductor SCT
100V N-Channel MOSFET, TO-220-3, RoHS
***i-Key
MOSFET N-CH 100V 18A/140A TO220
***icroelectronics
N-channel 100 V, 2.85 mOhm typ., 110 A STripFET F7 Power MOSFET in a TO-220 package
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 100V 110A STripFET F7 TO-220
***ark
MOSFET, N-CH, 100V, 110A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
***p One Stop
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single N-Channel 100 V 3 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 100 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 84 / Turn-ON Delay Time ns = 34 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
IPP030N10N5 Series 100 V 120 A OptiMOS™5 Power Transistor MOSFET - TO-220-3
***ical
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
***ark
MOSFET, N-CH, 100V, 120A, 175DEG C, 250W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***p One Stop
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single N-Channel 100V 4.5 mOhm 88 nC OptiMOS™ Power Mosfet - TO-220-3
***ponent Stockers USA
100 A 100 V 0.0045 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0039Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 137 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 59 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 27 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 214
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel Power MOSFET, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
FDP047N10 Series 100 V 164 A 4.7 mOhm N-Channel PowerTrench Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET,N CH,100V,120A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***ark
100V 4.5MOHM TO220 3L JEDEC GREEN EMC - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (F102)
***ical
Trans MOSFET N-CH Si 100V 164A 3-Pin(3+Tab) TO-220 Rail
***emi
N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Parte # Mfg. Descripción Valores Precio
AOT290L
DISTI # V72:2272_07841347		Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R
RoHS: Compliant		961
  • 500:$2.3010
  • 250:$2.3250
  • 100:$2.3490
  • 25:$2.6020
  • 10:$2.9160
  • 1:$3.6212
AOT290L
DISTI # V36:1790_07841347		Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R
RoHS: Compliant		585
  • 3000:$1.5630
  • 1000:$1.6570
AOT290L
DISTI # 785-1271-5-ND		Alpha & Omega SemiconductorMOSFET N-CH 100V 140A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		5873In Stock
  • 5000:$1.5187
  • 3000:$1.5780
  • 1000:$1.6611
  • 100:$2.4323
  • 25:$2.6696
  • 10:$2.9660
  • 1:$3.3200
AOT290L
DISTI # 27168449		Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R
RoHS: Compliant		961
  • 5:$3.6212
AOT290L
DISTI # 25690947		Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R
RoHS: Compliant		585
  • 585:$1.6570
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Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de AOT290L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,73 US$
2,73 US$
10
2,59 US$
25,92 US$
100
2,46 US$
245,61 US$
500
2,32 US$
1 159,80 US$
1000
2,18 US$
2 183,20 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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