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STF9HN65M2

STF9HN65M2
Mfr. #:
STF9HN65M2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STF9HN65M2 Ficha de datos
Entrega:
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HTML Datasheet:
STF9HN65M2 DatasheetSTF9HN65M2 Datasheet (P4-P6)STF9HN65M2 Datasheet (P7-P9)STF9HN65M2 Datasheet (P10-P12)STF9HN65M2 Datasheet (P13)
ECAD Model:
Más información:
STF9HN65M2 más información STF9HN65M2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
5.5 A
Rds On - Resistencia de la fuente de drenaje:
820 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
11.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
20 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Embalaje:
Tubo
Altura:
4.6 mm
Longitud:
16.4 mm
Producto:
MOSFET de potencia
Serie:
STF9HN65M2
Tipo de transistor:
1 N-Channel
Escribe:
MDmesh M2
Ancho:
10.4 mm
Marca:
STMicroelectronics
Otoño:
14.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.6 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24 ns
Tiempo típico de retardo de encendido:
7.5 ns
Unidad de peso:
0.011640 oz
Tags
STF9, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ical
Trans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
2.2µF ±20% 16V JB Ceramic Capacitor -25°C ~ 85°C Surface Mount, MLCC 0805 (2012 Metric) 0.079" L x 0.049" W (2.00mm x 1.25mm)
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 650 V 7 A 25 W Through Hole MDmesh M2 Power MOSFET - TO-220FP
*** Electronics
STMICROELECTRONICS STF11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-250FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
***ark
Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes
***el Electronic
Low Power, Wideband, Voltage Feedback Operational Amplifier with Disable 6-SOT-23 -40 to 85
*** Electronics
STMICROELECTRONICS STP11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***itex
Transistor: N-MOSFET; unipolar; 650V; 10.1A; 0.65ohm; 28W; -40+150 deg.C; THT; TO220F
***ark
Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ure Electronics
N-Channel 600 V 5.6 A 800 mO 17.2 nC CoolMOS CE Power Transistor - TO-220FP
***ical
Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 8.4A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ical
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP
***ark
Mosfet, N-Ch, 500V, 7.6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.72Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
*** Electronics
STMICROELECTRONICS STF9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***ure Electronics
N-Channel 650 V 900 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 650V 5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Parte # Mfg. Descripción Valores Precio
STF9HN65M2
DISTI # V99:2348_17628778		STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		30
  • 1:$0.5101
STF9HN65M2
DISTI # V36:1790_13796776		STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		0
  • 2000000:$0.4303
  • 1000000:$0.4330
  • 200000:$0.6708
  • 20000:$1.0900
  • 2000:$1.1600
STF9HN65M2
DISTI # 497-16014-5-ND		STMicroelectronicsMOSFET N-CH 650V 5.5A TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube		171In Stock
  • 5000:$0.4958
  • 2500:$0.5219
  • 500:$0.7082
  • 100:$0.8573
  • 50:$1.0438
  • 10:$1.1000
  • 1:$1.2300
STF9HN65M2
DISTI # 25948473		STMicroelectronicsTrans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		30
  • 13:$0.5101
STF9HN65M2
DISTI # STF9HN65M2		STMicroelectronicsTrans MOSFET N-CH 600V 5.5A 3-Pin TO-220FP Tube (Alt: STF9HN65M2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€0.5829
  • 500:€0.5999
  • 100:€0.6279
  • 50:€0.6669
  • 25:€0.7839
  • 10:€0.9789
  • 1:€1.5249
STF9HN65M2
DISTI # STF9HN65M2		STMicroelectronicsTrans MOSFET N-CH 600V 5.5A 3-Pin TO-220FP Tube - Rail/Tube (Alt: STF9HN65M2)
RoHS: Not Compliant
Min Qty: 2000
Container: Tube		Americas - 0
  • 20000:$0.4529
  • 10000:$0.4619
  • 6000:$0.4839
  • 4000:$0.5069
  • 2000:$0.5319
STF9HN65M2
DISTI # 56Y0949		STMicroelectronicsPTD HIGH VOLTAGE0
  • 10000:$0.4620
  • 2500:$0.4760
  • 1000:$0.5900
  • 500:$0.6750
  • 100:$0.7640
  • 10:$0.9940
  • 1:$1.1600
STF9HN65M2
DISTI # 511-STF9HN65M2		STMicroelectronicsMOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
RoHS: Compliant		1917
  • 1:$1.1600
  • 10:$0.9940
  • 100:$0.7640
  • 500:$0.6750
  • 1000:$0.5330
  • 2000:$0.4730
  • 10000:$0.4550
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 MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de STF9HN65M2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,16 US$
1,16 US$
10
0,99 US$
9,94 US$
100
0,76 US$
76,40 US$
500
0,68 US$
337,50 US$
1000
0,53 US$
533,00 US$
2000
0,47 US$
946,00 US$
10000
0,46 US$
4 550,00 US$
25000
0,44 US$
11 025,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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