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IRF7807TRPBF

IRF7807TRPBF
Mfr. #:
IRF7807TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 8.3A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF7807TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRF7807TRPBF más información
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Carrete
Unidad de peso
0.019048 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-8
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.5 W
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
8.3 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
25 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
12 nC
Tags
IRF7807TRP, IRF7807T, IRF7807, IRF780, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, N-Channel MOSFET, 8.3 A, 30 V, 8-Pin SOIC Infineon IRF7807TRPBF
***ark
Mosfet Transistor, N Channel, 8.3 A, 30 V, 25 Mohm, 4.5 V, 1 V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ure Electronics
Single N-Channel 30 V 25 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***et
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
***et Europe
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC
***ponent Sense
MOSFET N-CH 30V 8.3A 8-SOIC
***ied Electronics & Automation
MOSFET; 30V; 8.3A; 25 MOHM; 12 NC QG; SO-8
***ronik
N-CH 30V 8,3A 25mOhm SO-8 RoHSconf
***ukat
N-Ch 30V 8,3A 2,5W 0,025R SO8
***ment14 APAC
Prices include import duty and tax. MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:8.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:66A; Row Pitch:6.3mm; SMD Marking:IRF7807PBF; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***nell
MOSFET, N, LOGIC, SO-8; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:8.3A; Napięcie drenu / źródła Vds:30V; Rezystancja przewodzenia Rds(on):0.025ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:1V; Straty mocy Pd:2.5W; Rodzaj obudowy tranzystora:SOIC; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Długość/wysokość zewnętrzna:1.75mm; Głębokość zewnętrzna:5.2mm; Liczba tranzystorów:1; Maks. prąd Id:8.3A; Napięcie Vds, typ.:30V; Napięcie Vgs pomiaru Rds on:4.5V; Napięcie Vgs, maks.:1V; Oznaczenie SMD:IRF7807PBF; Prąd impulsowy Idm:66A; Rozstaw rzędów:6.3mm; Szerokość zewnętrzna:4.05mm; Temperatura przy pełnej mocy znamionowej:25°C; Temperatura przy pomiarze prądu:25°C; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descripción Valores Precio
IRF7807TRPBF
DISTI # V72:2272_13890715		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
RoHS: Compliant		267
  • 250:$0.5389
  • 100:$0.5403
  • 25:$0.6604
  • 10:$0.6630
  • 1:$0.7507
IRF7807TRPBF
DISTI # IRF7807PBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3432In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
IRF7807TRPBF
DISTI # IRF7807PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3432In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
IRF7807TRPBF
DISTI # IRF7807PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.4466
IRF7807TRPBF
DISTI # 27177193		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
RoHS: Compliant		12000
  • 4000:$0.3706
IRF7807TRPBF
DISTI # 26196317		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
RoHS: Compliant		267
  • 250:$0.5389
  • 100:$0.5403
  • 25:$0.6604
  • 20:$0.6630
IRF7807TRPBF
DISTI # SP001570502		Infineon Technologies AGMOSFET, 30V, 8.3A, 25 MOHM, 12 NC QG, SO-8 (Alt: SP001570502)
RoHS: Compliant
Min Qty: 4000		Europe - 0
  • 4000:€0.3329
  • 8000:€0.3319
  • 16000:€0.3309
  • 24000:€0.3309
  • 40000:€0.3299
IRF7807TRPBF-EL
DISTI # IRF7807TRPBF-EL		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R (Alt: IRF7807TRPBF-EL)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
    IRF7807TRPBF-EL
    DISTI # IRF7807TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7807TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.3339
    • 8000:$0.3219
    • 16000:$0.3099
    • 24000:$0.2999
    • 40000:$0.2939
    IRF7807TRPBF
    DISTI # 13AC9207    		Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation RoHS Compliant: Yes228
    • 1:$0.9600
    • 10:$0.8120
    • 25:$0.7490
    • 50:$0.6870
    • 100:$0.6240
    • 250:$0.5880
    • 500:$0.5520
    • 1000:$0.4350
    IRF7807TRPBF
    DISTI # 70017540    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 17 Milliohms,ID 8.3A,SO-8,PD 2.5W,VGS +/-12V
    RoHS: Compliant    		0
    • 4000:$1.0370
    IRF7807TRPBF
    DISTI # 942-IRF7807TRPBF    		Infineon Technologies AGMOSFET MOSFT 30V 8.3A 25mOhm 12nC
    RoHS: Compliant    		2577
    • 1:$0.9600
    • 10:$0.8120
    • 100:$0.6240
    • 500:$0.5520
    • 1000:$0.4350
    • 4000:$0.3860
    IRF7807TRPBF
    DISTI # 8273880P    		Infineon Technologies AGHEXFET MOSFET 8.3A 30V FOR DC-DC SOIC8, RL1820
    • 100:£0.4520
    • 500:£0.4000
    • 2000:£0.3150
    • 4000:£0.2800
    IRF7807TRPBF
    DISTI # IRF7807PBF-GURT    		Infineon Technologies AGN-Ch 30V 8,3A 2,5W 0,025R SO8
    RoHS: Compliant    		3250
    • 50:€0.4070
    • 100:€0.3470
    • 500:€0.3170
    • 2000:€0.3050
    IRF7807TRPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 4000
      IRF7807TRPBFInternational RectifierINSTOCK3990
        IRF7807TRPBF48INSTOCK3990
          IRF7807TRPBF
          DISTI # 2725916          		Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC
          RoHS: Compliant          		233
          • 5:£0.6350
          • 25:£0.6200
          • 100:£0.4570
          • 250:£0.4310
          • 500:£0.4040
          IRF7807TRPBF
          DISTI # C1S322000486209          		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
          RoHS: Compliant          		267
          • 250:$0.5389
          • 100:$0.5403
          • 25:$0.6604
          • 10:$0.6630
          IRF7807TRPBF
          DISTI # C1S322000486193          		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
          RoHS: Compliant          		12000
          • 4000:$0.4280
          IRF7807TRPBF
          DISTI # 2725916          		Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC
          RoHS: Compliant          		228
          • 1:$1.5300
          • 10:$1.2900
          • 100:$0.9870
          • 500:$0.8740
          • 1000:$0.6890
          • 4000:$0.6530
          IRF7807TRPBF
          DISTI # XSLY00000000847          		INFINEON/IRSO-8
          RoHS: Compliant          		4000
          • 4000:$0.4900
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          Disponibilidad
          Valores:
          Available
          En orden:
          2500
          Ingrese la cantidad:
          El precio actual de IRF7807TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,52 US$
          0,52 US$
          10
          0,49 US$
          4,94 US$
          100
          0,47 US$
          46,79 US$
          500
          0,44 US$
          220,95 US$
          1000
          0,42 US$
          415,90 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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