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IRFHM792TRPBF

IRFHM792TRPBF
Mfr. #:
IRFHM792TRPBF
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET 100V DUAL N-CH HEXFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFHM792TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
HEXFETR
embalaje
Tape & Reel (TR)
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-PowerVDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-PQFN (3.3x3.3), Power33
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
2.3W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
251pF @ 25V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
2.3A
Rds-On-Max-Id-Vgs
195 mOhm @ 2.9A, 10V
Vgs-th-Max-Id
4V @ 10μA
Puerta-Carga-Qg-Vgs
6.3nC @ 10V
Disipación de potencia Pd
2.3 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
2.6 ns
Hora de levantarse
4.7 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
2.3 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
195 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
5.2 ns
Tiempo de retardo de encendido típico
3.4 ns
Qg-Gate-Charge
4.2 nC
Transconductancia directa-Mín.
3.5 S
Tags
IRFHM79, IRFHM7, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 100 V 195 mOhm 6.3 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ernational Rectifier
100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
***et
Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R
***ark
N CH MOSFET, DUAL, 100V, 3.4A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.164ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified INDUSTRIAL; Qualified MSL1; Dual N-Channel MOSFET
Parte # Mfg. Descripción Valores Precio
IRFHM792TRPBF
DISTI # IRFHM792TRPBF-ND		Infineon Technologies AGMOSFET 2N-CH 100V 2.3A 8PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.9263
IRFHM792TRPBF
DISTI # IRFHM792TRPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM792TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.7189
  • 8000:$0.6929
  • 16000:$0.6679
  • 24000:$0.6449
  • 40000:$0.6339
IRFHM792TRPBF
DISTI # SP001554848		Infineon Technologies AGTrans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R (Alt: SP001554848)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.9309
  • 8000:€0.7609
  • 16000:€0.6979
  • 24000:€0.6439
  • 40000:€0.5979
IRFHM792TRPBF
DISTI # 942-IRFHM792TRPBF		Infineon Technologies AGMOSFET 100V DUAL N-CH HEXFET
RoHS: Compliant		161
  • 1:$1.8800
  • 10:$1.6000
  • 100:$1.2800
  • 500:$1.1200
  • 1000:$0.9300
  • 4000:$0.8300
Imagen Parte # Descripción
IRFHM792TRPBF

Mfr.#: IRFHM792TRPBF

OMO.#: OMO-IRFHM792TRPBF

 MOSFET 100V DUAL N-CH HEXFET
IRFHM792TR2PBF

Mfr.#: IRFHM792TR2PBF

OMO.#: OMO-IRFHM792TR2PBF

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IRFHM792TRPBFINFINEON-CS

Mfr.#: IRFHM792TRPBFINFINEON-CS

OMO.#: OMO-IRFHM792TRPBFINFINEON-CS-1190

 Nuevo y original
IRFHM792TR2PBF

Mfr.#: IRFHM792TR2PBF

OMO.#: OMO-IRFHM792TR2PBF-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET MOSFT 100V dual 2.9A 195mOhm
IRFHM792TRPBF

Mfr.#: IRFHM792TRPBF

OMO.#: OMO-IRFHM792TRPBF-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET 100V DUAL N-CH HEXFET
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de IRFHM792TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,95 US$
0,95 US$
10
0,90 US$
9,03 US$
100
0,86 US$
85,58 US$
500
0,81 US$
404,10 US$
1000
0,76 US$
760,70 US$
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