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IGW75N65H5XKSA1

IGW75N65H5XKSA1
Mfr. #:
IGW75N65H5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW75N65H5XKSA1 Ficha de datos
Entrega:
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ECAD Model:
Más información:
IGW75N65H5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
120 A
Pd - Disipación de energía:
395 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGW75N65H5 SP001257936
Unidad de peso:
0.215171 oz
Tags
IGW7, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
***an P&S
650V,120A,High Speed IGBT
***i-Key
IGBT TRENCH 650V 120A TO247-3
***ronik
IGBT 650V 75A 1.65V TO247-3
***ark
Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, SINGOLO, 650V, 120A, TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:395W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descripción Valores Precio
IGW75N65H5XKSA1
DISTI # V36:1790_06377901		Infineon Technologies AGTrans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube0
    IGW75N65H5XKSA1
    DISTI # IGW75N65H5XKSA1-ND    		Infineon Technologies AGIGBT TRENCH 650V 120A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		660In Stock
    • 2640:$2.7625
    • 720:$3.4393
    • 240:$4.0401
    • 25:$4.6616
    • 10:$4.9310
    • 1:$5.4900
    IGW75N65H5XKSA1
    DISTI # IGW75N65H5XKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW75N65H5XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1200:$2.4900
    • 2400:$2.4900
    • 720:$2.5900
    • 480:$2.6900
    • 240:$2.7900
    IGW75N65H5XKSA1
    DISTI # 34AC1616    		Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes336
    • 500:$3.3000
    • 250:$3.6900
    • 100:$3.8800
    • 50:$4.0800
    • 25:$4.2800
    • 10:$4.4800
    • 1:$5.2700
    IGW75N65H5XKSA1
    DISTI # 726-IGW75N65H5XKSA1    		Infineon Technologies AGIGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e12
    • 1:$5.2200
    • 10:$4.4400
    • 100:$3.8400
    • 250:$3.6500
    • 500:$3.2700
    IGW75N65H5XKSA1
    DISTI # 2781022    		Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247
    RoHS: Compliant    		336
    • 1000:$3.6300
    • 500:$3.8000
    • 250:$4.0100
    • 100:$4.2400
    • 10:$4.7900
    • 1:$5.1200
    IGW75N65H5XKSA1
    DISTI # 2781022    		Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247362
    • 500:£2.4700
    • 250:£2.7600
    • 100:£2.9000
    • 10:£3.3500
    • 1:£3.9400
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    OMO.#: OMO-SI8231BB-D-IS1-SILICON-LABS

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    Disponibilidad
    Valores:
    430
    En orden:
    2413
    Ingrese la cantidad:
    El precio actual de IGW75N65H5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,22 US$
    5,22 US$
    10
    4,44 US$
    44,40 US$
    100
    3,84 US$
    384,00 US$
    250
    3,65 US$
    912,50 US$
    500
    3,27 US$
    1 635,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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