IGW75N60H3 vs IGW75N60 vs IGW75N60H3 G75H603

 
PartNumberIGW75N60H3IGW75N60IGW75N60H3 G75H603
DescriptionIGBT Transistors IGBT PRODUCTS TrenchStop
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.85 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C140 A--
Pd Power Dissipation428 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3--
PackagingTube--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW75N60H3FKSA1 IGW75N6H3XK SP000906804--
Unit Weight0.211644 oz--
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