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FDS86106

FDS86106
Mfr. #:
FDS86106
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 100V 3.4A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS86106 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
FDS86106 más información
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET - Single
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
2.5W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
208pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
3.4A (Ta)
Rds-On-Max-Id-Vgs
105 mOhm @ 3.4A, 10V
Vgs-th-Max-Id
4V @ 250μA
Puerta-Carga-Qg-Vgs
4nC @ 10V
Disipación de potencia Pd
5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
10 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
3.4 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Resistencia a la fuente de desagüe de Rds
83 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
15 ns
Tiempo de retardo de encendido típico
10 ns
Qg-Gate-Charge
3 nC
Transconductancia directa-Mín.
6 S
Tags
FDS861, FDS86, FDS8, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power Trench® MOSFET 100V, 3.4A, 105mΩ
***et Europe
Trans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
MOSFET, N CH, 100V, 3.4A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:15A
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDS86106
DISTI # 32026979		ON SemiconductorTrans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R5000
  • 2500:$0.3584
FDS86106
DISTI # FDS86106CT-ND		ON SemiconductorMOSFET N-CH 100V 3.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		25670In Stock
  • 1000:$0.4844
  • 500:$0.6135
  • 100:$0.7911
  • 10:$1.0010
  • 1:$1.1300
FDS86106
DISTI # FDS86106DKR-ND		ON SemiconductorMOSFET N-CH 100V 3.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		25670In Stock
  • 1000:$0.4844
  • 500:$0.6135
  • 100:$0.7911
  • 10:$1.0010
  • 1:$1.1300
FDS86106
DISTI # FDS86106TR-ND		ON SemiconductorMOSFET N-CH 100V 3.4A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		22500In Stock
  • 25000:$0.3990
  • 12500:$0.4013
  • 5000:$0.4170
  • 2500:$0.4389
FDS86106
DISTI # V72:2272_06338051		ON SemiconductorTrans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R0
    FDS86106
    DISTI # V36:1790_06338051    		ON SemiconductorTrans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R0
      FDS86106
      DISTI # FDS86106      		ON SemiconductorTrans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R (Alt: FDS86106)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.3539
      • 15000:€0.3809
      • 10000:€0.4129
      • 5000:€0.4499
      • 2500:€0.5499
      FDS86106
      DISTI # FDS86106      		ON SemiconductorTrans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R - Bulk (Alt: FDS86106)
      RoHS: Not Compliant
      Min Qty: 782
      Container: Bulk      		Americas - 0
        FDS86106
        DISTI # FDS86106        		ON SemiconductorTrans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R (Alt: FDS86106)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Asia - 0
        • 125000:$0.4672
        • 62500:$0.4750
        • 25000:$0.4914
        • 12500:$0.5089
        • 7500:$0.5278
        • 5000:$0.5481
        • 2500:$0.5700
        FDS86106
        DISTI # FDS86106        		ON SemiconductorTrans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS86106)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 25000:$0.3509
        • 15000:$0.3599
        • 10000:$0.3649
        • 5000:$0.3699
        • 2500:$0.3719
        FDS86106
        DISTI # 85W3154        		ON SemiconductorMOSFET, N CHANNEL, 100V, 0.083OHM, 3.4A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.9VRoHS Compliant: Yes0
        • 1000:$0.4390
        • 500:$0.5530
        • 250:$0.5890
        • 100:$0.6240
        • 50:$0.6860
        • 25:$0.7470
        • 10:$0.8090
        • 1:$0.9510
        FDS86106
        DISTI # 92R5585        		ON SemiconductorMOSFET Transistor, N Channel, 3.4 A, 100 V, 0.083 ohm, 10 V, 2.9 V RoHS Compliant: Yes0
        • 1:$0.3910
        • 2500:$0.3910
        FDS86106.
        DISTI # 29AC6319        		Fairchild Semiconductor CorporationFET 100V 105.0 MOHM SO8 ROHS COMPLIANT: YES0
        • 25000:$0.3550
        • 15000:$0.3640
        • 10000:$0.3690
        • 5000:$0.3740
        • 1:$0.3760
        FDS86106
        DISTI # 512-FDS86106        		ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
        RoHS: Compliant        		2484
        • 1:$0.9300
        • 10:$0.7980
        • 100:$0.6130
        • 500:$0.5420
        • 1000:$0.4280
        • 2500:$0.3800
        • 10000:$0.3650
        FDS86106Fairchild Semiconductor Corporation 2040
          FDS86106
          DISTI # 7599686P          		ON SemiconductorMOSFET N-CHANNEL 100V 3.4A SOIC8, RL5205
          • 500:£0.3220
          • 250:£0.3280
          • 100:£0.3500
          • 50:£0.3840
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          FDS8449-CUT TAPE

          Mfr.#: FDS8449-CUT TAPE

          OMO.#: OMO-FDS8449-CUT-TAPE-1190

          		 Nuevo y original
          Disponibilidad
          Valores:
          Available
          En orden:
          1000
          Ingrese la cantidad:
          El precio actual de FDS86106 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,53 US$
          0,53 US$
          10
          0,50 US$
          5,00 US$
          100
          0,47 US$
          47,37 US$
          500
          0,45 US$
          223,70 US$
          1000
          0,42 US$
          421,10 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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