FDS8935

FDS8935
Mfr. #:
FDS8935
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET -80V Dual P-Channel PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS8935 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDS8935 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Id - Corriente de drenaje continua:
2.1 A
Rds On - Resistencia de la fuente de drenaje:
183 mOhms
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.1 W
Configuración:
Doble
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
FDS8935
Tipo de transistor:
2 P-Channel
Ancho:
3.9 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
6.4 S
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Unidad de peso:
0.006596 oz
Tags
FDS893, FDS89, FDS8, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual P-Channel -80 V 247 mOhm 19 nC 3.1 W PowerTrench Mosfet - SOIC-8
***Semiconductor
Dual P-Channel PowerTrench® MOSFET -80V, -2.1A, 183mΩ
***rchild Semiconductor
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, PP CH, 80V, 2.1A, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.148ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
FDS8935 Dual P-Channel PowerTrench® MOSFET
ON Semiconductor FDS8935 Dual P-Channel PowerTrench® MOSFET is optimized for switching performance and ruggedness. This MOSFET features high-performance Trench technology for extremely low on-resistance. The FDS8935 MOSFET offers high power and current handling capability in a widely used SO-8 surface mount package. This MOSFET is designed for use in load switch and synchronous rectifier applications.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDS8935
DISTI # V72:2272_06338076
ON SemiconductorDUAL P-CHANNEL 80/20V POWERTRE1825
  • 1000:$0.5554
  • 500:$0.7020
  • 250:$0.7746
  • 100:$0.8045
  • 25:$1.0355
  • 10:$1.0469
  • 1:$1.2281
FDS8935
DISTI # FDS8935TR-ND
ON SemiconductorMOSFET 2P-CH 80V 2.1A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.6160
FDS8935
DISTI # FDS8935CT-ND
ON SemiconductorMOSFET 2P-CH 80V 2.1A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
FDS8935
DISTI # FDS8935DKR-ND
ON SemiconductorMOSFET 2P-CH 80V 2.1A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
FDS8935
DISTI # 30722685
ON SemiconductorDUAL P-CHANNEL 80/20V POWERTRE1825
  • 1000:$0.5556
  • 500:$0.7020
  • 250:$0.7746
  • 100:$0.8045
  • 25:$1.0355
  • 13:$1.0469
FDS8935
DISTI # 30614621
ON SemiconductorDUAL P-CHANNEL 80/20V POWERTRE15
  • 10:$1.4407
FDS8935
DISTI # FDS8935
ON SemiconductorTrans MOSFET P-CH 80V 2.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8935)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5219
  • 5000:$0.5189
  • 10000:$0.5119
  • 15000:$0.5059
  • 25000:$0.4929
FDS8935
DISTI # 27T6449
ON SemiconductorTransistor Polarity:Dual P Channel,Continuous Drain Current Id:-2.1A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.148ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V,Power Dissipation Pd:3.1W RoHS Compliant: Yes0
  • 1:$0.5470
  • 2500:$0.5470
  • 5000:$0.5270
  • 7500:$0.5150
  • 12500:$0.4950
FDS8935
DISTI # 88T3367
ON SemiconductorMOSFET, PP CH, 80V, 2.1A, 8SOIC,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-2.1A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.148ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V RoHS Compliant: Yes2222
  • 1:$1.3200
  • 10:$1.1200
  • 25:$1.0300
  • 50:$0.9470
  • 100:$0.8610
  • 250:$0.8110
  • 500:$0.7610
  • 1000:$0.6000
FDS8935
DISTI # 512-FDS8935
ON SemiconductorMOSFET -80V Dual P-Channel PowerTrench MOSFET
RoHS: Compliant
4753
  • 1:$1.3200
  • 10:$1.1200
  • 100:$0.8610
  • 500:$0.7610
  • 1000:$0.6000
FDS8935Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.1A I(D), 80V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
35
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
FDS8935
DISTI # 2083351
ON SemiconductorMOSFET, PP CH, 80V, 2.1A, 8SOIC
RoHS: Compliant
2272
  • 5:£1.1800
  • 25:£1.0600
  • 100:£0.8160
FDS8935
DISTI # C1S541901560443
ON SemiconductorTrans MOSFET P-CH 80V 2.1A 8-Pin SOIC T/R
RoHS: Compliant
15
  • 10:$1.1300
  • 1:$2.2100
FDS8935
DISTI # C1S226600604859
ON SemiconductorTrans MOSFET P-CH 80V 2.1A 8-Pin SOIC N T/R
RoHS: Compliant
1825
  • 250:$0.7746
  • 100:$0.8045
  • 25:$1.0355
  • 10:$1.0469
FDS8935
DISTI # 2083351
ON SemiconductorMOSFET, PP CH, 80V, 2.1A, 8SOIC
RoHS: Compliant
2292
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.3700
Imagen Parte # Descripción
10CX220YF780I5G

Mfr.#: 10CX220YF780I5G

OMO.#: OMO-10CX220YF780I5G

FPGA - Field Programmable Gate Array
S34ML04G100TFV000

Mfr.#: S34ML04G100TFV000

OMO.#: OMO-S34ML04G100TFV000

NAND Flash Nand
AQ4022-01FTG-C

Mfr.#: AQ4022-01FTG-C

OMO.#: OMO-AQ4022-01FTG-C

TVS Diodes / ESD Suppressors 15A 1.3pF AEC-Q101
SMMBTA06WT1G

Mfr.#: SMMBTA06WT1G

OMO.#: OMO-SMMBTA06WT1G

Bipolar Transistors - BJT SS GP XSTR NPN 80V
FDS89141

Mfr.#: FDS89141

OMO.#: OMO-FDS89141

MOSFET 100V Dual N-Channel PowerTrench MOSFET
IDW12G65C5XKSA1

Mfr.#: IDW12G65C5XKSA1

OMO.#: OMO-IDW12G65C5XKSA1

Schottky Diodes & Rectifiers SIC DIODES
SMMBTA06WT1G

Mfr.#: SMMBTA06WT1G

OMO.#: OMO-SMMBTA06WT1G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT SS GP XSTR NPN 80V
10CX220YF780I5G

Mfr.#: 10CX220YF780I5G

OMO.#: OMO-10CX220YF780I5G-INTEL

780-PIN FBGA Cyclone 10 GX
RCWE2512R200FKEA

Mfr.#: RCWE2512R200FKEA

OMO.#: OMO-RCWE2512R200FKEA-VISHAY-DALE

Res Thick Film 2512 0.2 Ohm 1% 2W ±100ppm/C Molded SMD Automotive Punched Paper T/R
IDW12G65C5XKSA1

Mfr.#: IDW12G65C5XKSA1

OMO.#: OMO-IDW12G65C5XKSA1-INFINEON-TECHNOLOGIES

DIODE SCHOTTKY 650V 12A TO247-3
Disponibilidad
Valores:
Available
En orden:
1990
Ingrese la cantidad:
El precio actual de FDS8935 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,31 US$
1,31 US$
10
1,12 US$
11,20 US$
100
0,86 US$
86,10 US$
500
0,76 US$
380,50 US$
1000
0,60 US$
600,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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