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FDT461N

FDT461N
Mfr. #:
FDT461N
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDT461N Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDT461N DatasheetFDT461N Datasheet (P4-P6)FDT461N Datasheet (P7-P9)FDT461N Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-223-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
400 mA
Rds On - Resistencia de la fuente de drenaje:
1.4 Ohms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.13 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.8 mm
Longitud:
6.5 mm
Producto:
Pequeña señal MOSFET
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
3.5 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
1.3 ns
Tipo de producto:
MOSFET
Hora de levantarse:
1.3 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
63 ns
Tiempo típico de retardo de encendido:
3 ns
Parte # Alias:
FDT461N_NL
Unidad de peso:
0.003951 oz
Tags
FDT4, FDT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
N-Channel 100V 540mA (Ta) 1.13W (Ta) Surface Mount SOT-223-4 - Bulk
***i-Key
MOSFET N-CH 100V 0.54A SOT-223
***inecomponents.com
100V N-Channel Logic Level PowerTrench MOSFET
***ser
MOSFETs NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
***or
MOSFET N-CH 100V 540MA SOT223-4
***ure Electronics
Single N-Channel 100 V 2 W Silicon Surface Mount Mosfet - SOT-223
***ical
Trans MOSFET N-CH 100V 0.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ark
MOSFET, N CHANNEL, 100V, 0.8A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes
***nell
MOSFET, N CH, 100V, 0.8A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 800mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 1.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
*** Stop Electro
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ohm; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 100 V 0.2 Ohm 17 nC HEXFET® Power Mosfet - SOT-223
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***ical
Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 Tube
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. of Pins:4Pins RoHS Compliant: Yes
***nell
MOSFET, N, 100V, 1.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 13A; SMD Marking: FL4310; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***klin Elektronik
INFINEON SMD Autom. MOSFET NFET 100V 1,8A 230mΩ 150°C SOT-223 BSP372
***p One Stop
Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS™ Power Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:
***ment14 APAC
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance
***ark
MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.153ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 6.7 / Turn-OFF Delay Time ns = 47.3 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223
***eco
Transistor MOSFET N-Channel 100 Volt 1.7A 4-Pin(3+Tab) SOT-223
*** Source Electronics
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223
***ure Electronics
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
***nell
N CH MOSFET, 100V, 1.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 380 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
***(Formerly Allied Electronics)
IRFL9110TRPBF P-channel MOSFET Transistor; 0.69 A; 100 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Stop Electro
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Parte # Mfg. Descripción Valores Precio
FDT461N
DISTI # FDT461N-ND		ON SemiconductorMOSFET N-CH 100V 0.54A SOT-223
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDT461NFairchild Semiconductor CorporationPower Field-Effect Transistor, 0.54A I(D), 100V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		47000
    • 1000:$0.4500
    • 500:$0.4700
    • 100:$0.4900
    • 25:$0.5100
    • 1:$0.5500
    FDT461N
    DISTI # 512-FDT461N    		ON SemiconductorMOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
    RoHS: Compliant    		0
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      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de FDT461N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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