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SI4062DY-T1-GE3

SI4062DY-T1-GE3
Mfr. #:
SI4062DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 60V Vds 20V Vgs SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4062DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4062DY-T1-GE3 DatasheetSI4062DY-T1-GE3 Datasheet (P4-P6)SI4062DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI4062DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
32.1 A
Rds On - Resistencia de la fuente de drenaje:
4.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.4 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
40 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
7.8 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI4
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
80 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
6 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
34 ns
Tiempo típico de retardo de encendido:
16 ns
Unidad de peso:
0.017870 oz
Tags
SI406, SI40, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    I***v
    I***v
    RU

    Got somewhere in 10 weeks. Packed at 3.5 but overall i'm happy with the order)

    2019-02-07
    E**h
    E**h
    PL

    Comes pretty fast. Nice. Thanks!

    2019-01-24
***ure Electronics
N-Channel 60 V 4.2 mOhm 7.8 W SMT TrenchFET Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 60V 32.1A 8-Pin SOIC N T/R
***et
Trans MOSFET N-CH 60V 21.5A 8-Pin SO T/R
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4062DY-T1-GE3
DISTI # 30613937		Vishay IntertechnologiesTrans MOSFET N-CH 60V 32.1A 8-Pin SOIC N T/R
RoHS: Compliant		475
  • 8:$3.3375
SI4062DY-T1-GE3
DISTI # SI4062DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 60V 32.1A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2599In Stock
  • 1000:$0.7833
  • 500:$0.9454
  • 100:$1.1507
  • 10:$1.4320
  • 1:$1.5900
SI4062DY-T1-GE3
DISTI # SI4062DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 32.1A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2599In Stock
  • 1000:$0.7833
  • 500:$0.9454
  • 100:$1.1507
  • 10:$1.4320
  • 1:$1.5900
SI4062DY-T1-GE3
DISTI # SI4062DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 60V 32.1A 8-SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.6713
  • 5000:$0.6976
  • 2500:$0.7343
SI4062DY-T1-GE3
DISTI # C1S803604135800		Vishay IntertechnologiesTrans MOSFET N-CH 60V 32.1A 8-Pin SOIC N T/R
RoHS: Compliant		475
  • 250:$1.0600
  • 100:$1.1500
  • 50:$1.4200
  • 10:$1.5500
  • 1:$2.6700
SI4062DY-T1-GE3
DISTI # V36:1790_14142097		Vishay IntertechnologiesTrans MOSFET N-CH 60V 32.1A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500:$0.6811
SI4062DY-T1-GE3
DISTI # V72:2272_14142097		Vishay IntertechnologiesTrans MOSFET N-CH 60V 32.1A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4062DY-T1-GE3
    DISTI # SI4062DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 21.5A 8-Pin SO T/R - Tape and Reel (Alt: SI4062DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.6399
    • 15000:$0.6579
    • 10000:$0.6759
    • 5000:$0.7049
    • 2500:$0.7269
    SI4062DY-T1-GE3
    DISTI # SI4062DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 21.5A 8-Pin SO T/R (Alt: SI4062DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.6499
    • 15000:€0.6789
    • 10000:€0.7679
    • 5000:€0.9469
    • 2500:€1.3199
    SI4062DY-T1-GE3
    DISTI # 99W9614    		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET0
    • 10000:$0.6350
    • 6000:$0.6500
    • 4000:$0.6750
    • 2000:$0.7500
    • 1000:$0.8250
    • 1:$0.8600
    SI4062DY-T1-GE3
    DISTI # 70AC6504    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 32.1A, 150DEG C, 7.8W,Transistor Polarity:N Channel,Continuous Drain Current Id:32.1A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes2500
    • 500:$0.9600
    • 250:$1.0400
    • 100:$1.1200
    • 50:$1.2300
    • 25:$1.3400
    • 10:$1.4500
    • 1:$1.7700
    SI4062DY-T1-GE3
    DISTI # 78-SI4062DY-T1-GE3    		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
    RoHS: Compliant    		2108
    • 1:$1.7400
    • 10:$1.4300
    • 100:$1.1000
    • 500:$0.9490
    • 1000:$0.7490
    • 2500:$0.6990
    • 5000:$0.6640
    • 10000:$0.6490
    SI4062DY-T1-GE3
    DISTI # 2919350    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 32.1A, 150DEG C, 7.8W
    RoHS: Compliant    		1846
    • 250:$1.3400
    • 100:$1.4200
    • 50:$1.6600
    • 25:$2.0300
    • 10:$2.5800
    • 1:$3.1200
    SI4062DY-T1-GE3
    DISTI # 2400365    		Vishay IntertechnologiesMOSFET, N CH, 60V, 32.1A, SOIC-8
    RoHS: Compliant    		0
    • 1000:$1.1900
    • 500:$1.4300
    • 100:$1.7400
    • 10:$2.1600
    • 1:$2.4000
    SI4062DY-T1-GE3
    DISTI # 2919350    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 32.1A, 150DEG C, 7.8W1736
    • 100:£1.0100
    • 50:£1.1100
    • 25:£1.2200
    • 10:£1.3100
    • 1:£1.6000
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    OMO.#: OMO-SM6T24A

    		 TVS Diodes / ESD Suppressors 600W 24V Unidirect
    BAT46WJ,115

    Mfr.#: BAT46WJ,115

    OMO.#: OMO-BAT46WJ-115

    		 Schottky Diodes & Rectifiers Schottky Diodes 100V 250mA Single
    MBRS1100T3G

    Mfr.#: MBRS1100T3G

    OMO.#: OMO-MBRS1100T3G

    		 Schottky Diodes & Rectifiers 1A 100V
    MC33063ADRJR

    Mfr.#: MC33063ADRJR

    OMO.#: OMO-MC33063ADRJR

    		 Switching Voltage Regulators 1.5-A Peak Boost/ Buck/Inverting
    2920L185DR

    Mfr.#: 2920L185DR

    OMO.#: OMO-2920L185DR

    		 Resettable Fuses - PPTC 1.85A 33V 2920
    ESP32-WROOM-32U

    Mfr.#: ESP32-WROOM-32U

    OMO.#: OMO-ESP32-WROOM-32U

    		 WiFi Modules (802.11) SMD Module, ESP32-D0WD, 32Mbits SPI flash, UART mode,
    J1011F21PNL

    Mfr.#: J1011F21PNL

    OMO.#: OMO-J1011F21PNL

    		 Modular Connectors / Ethernet Connectors Tab up 4-core THT
    SM6T24A

    Mfr.#: SM6T24A

    OMO.#: OMO-SM6T24A-STMICROELECTRONICS

    		 TVS DIODE 20.5V 42.8V SMB
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    OMO.#: OMO-J1011F21PNL-PULSE-ELECTRONICS

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    Disponibilidad
    Valores:
    Available
    En orden:
    1990
    Ingrese la cantidad:
    El precio actual de SI4062DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,74 US$
    1,74 US$
    10
    1,43 US$
    14,30 US$
    100
    1,10 US$
    110,00 US$
    500
    0,95 US$
    474,50 US$
    1000
    0,75 US$
    749,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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