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STGW30NC60WD

STGW30NC60WD
Mfr. #:
STGW30NC60WD
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors PowerMESH&#34 IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW30NC60WD Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGW30NC60WD más información STGW30NC60WD Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.1 V
Voltaje máximo del emisor de puerta:
20 V
Pd - Disipación de energía:
200 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
STGW30NC60WD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
60 A
Altura:
20.15 mm
Longitud:
15.75 mm
Ancho:
5.15 mm
Marca:
STMicroelectronics
Corriente continua del colector:
30 A
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
STGW30NC60W, STGW30NC6, STGW30NC, STGW30N, STGW30, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
***nell
IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***(Formerly Allied Electronics)
STGW30NC60WD,IGBT Ultrafast 600V 30A
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***ical
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 60A TO247
***nell
IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail
***eco
600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247
***rchild Semiconductor
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
***ical
Trans IGBT Chip N-CH 600V 60A 181000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
V Series 600 V 60 A Through Hole Silicon IGBT - TO-247-3
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins
***et
Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail
***ark
Single Igbt, 600V, 54A; Continuous Collector Current:54A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Onsemi HGTG12N60A4
***rchild Semiconductor
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***ow.cn
Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***ment14 APAC
IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
Parte # Mfg. Descripción Valores Precio
STGW30NC60WD
DISTI # 32694828		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1850
  • 500:$2.6235
  • 250:$2.9304
  • 100:$3.0888
  • 10:$3.5640
STGW30NC60WD
DISTI # 497-5204-5-ND		STMicroelectronicsIGBT 600V 60A 200W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		519In Stock
  • 2520:$2.2344
  • 510:$2.7818
  • 120:$3.2678
  • 30:$3.7707
  • 10:$3.9880
  • 1:$4.4400
STGW30NC60WD
DISTI # V36:1790_06560752		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW30NC60WD
    DISTI # STGW30NC60WD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW30NC60WD)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Europe - 750
    • 1000:€2.1200
    • 500:€2.1600
    • 250:€2.4400
    • 100:€2.5700
    • 10:€2.6900
    • 1:€3.6600
    STGW30NC60WD
    DISTI # STGW30NC60WD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW30NC60WD)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$2.0383
    • 3600:$2.0808
    • 2400:$2.1774
    • 1200:$2.2800
    • 600:$2.3928
    STGW30NC60WD
    DISTI # 26M3562    		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 26M3562)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 500:$3.3200
    • 250:$3.6300
    • 100:$3.7900
    • 50:$3.9500
    • 25:$4.1200
    • 10:$4.2800
    • 1:$4.9100
    STGW30NC60WD
    DISTI # 26M3562    		STMicroelectronicsIGBT, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:-RoHS Compliant: Yes0
    • 500:$3.1800
    • 250:$3.4800
    • 100:$3.6300
    • 50:$3.7900
    • 25:$3.9400
    • 10:$4.1000
    • 1:$4.7100
    STGW30NC60WD
    DISTI # 511-STGW30NC60WD    		STMicroelectronicsIGBT Transistors PowerMESH&#34 IGBT
    RoHS: Compliant    		260
    • 1:$4.2300
    • 10:$3.6000
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    • 1000:$2.2400
    • 2500:$2.1300
    STGW30NC60WDSTMicroelectronics*** FREE SHIPPING ORDERS OVER $100 *** INSULATED GATE BIPOLAR TRANSISTOR, 60A I(C), 600V V(BR)CES, N-CHANNEL, TO-247AC1104
    • 338:$1.3680
    • 118:$1.4820
    • 1:$3.4200
    STGW30NC60WD
    DISTI # 7959198P    		STMicroelectronicsSTGW30NC60WD IGBT ULTRAFAST 600V 30A, TU228
    • 600:£1.9100
    • 300:£2.1450
    • 90:£2.3750
    • 30:£2.6050
    STGW30NC60WD
    DISTI # 7959198    		STMicroelectronicsSTGW30NC60WD IGBT ULTRAFAST 600V 30A, PK100
    • 600:£1.9100
    • 300:£2.1450
    • 90:£2.3750
    • 30:£2.6050
    • 2:£3.2750
    STGW30NC60WDSTMicroelectronics 746
      STGW30NC60WD
      DISTI # STGW30NC60WD      		STMicroelectronicsTransistor: IGBT,600V,30A,200W,TO247-3101
      • 1:$3.6100
      • 3:$3.2600
      • 10:$2.6600
      • 30:$2.3100
      STGW30NC60WD
      DISTI # 1293659      		STMicroelectronicsIGBT, TO-247
      RoHS: Compliant      		118
      • 5000:$3.1600
      • 2500:$3.2800
      • 1000:$3.4500
      • 500:$4.0700
      • 250:$4.5500
      • 100:$4.8000
      • 10:$5.5400
      • 1:$6.5000
      STGW30NC60WD
      DISTI # 1293659      		STMicroelectronicsIGBT, TO-247148
      • 500:£2.1000
      • 250:£2.3500
      • 100:£2.4800
      • 10:£2.8500
      • 1:£3.7400
      STGW30NC60WD
      DISTI # XSKDRABS0032153      		STMicroelectronics 
      RoHS: Compliant      		360 in Stock0 on Order
      • 360:$2.4240
      • 330:$2.5920
      STGW30NC60WDSTMicroelectronicsInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
      RoHS: Compliant      		Europe - 60
        STGW30NC60WD
        DISTI # IGBT1369        		STMicroelectronicsIGBT600V60A2.1VTO247-3Stock DE - 420Stock HK - 0Stock US - 0
        • 30:$2.2800
        • 60:$2.1400
        • 120:$2.1100
        • 180:$2.0700
        • 300:$1.9500
        STGW30NC60WD
        DISTI # STGW30NC60WD        		STMicroelectronics600V 60A 200W TO247
        RoHS: Compliant        		75
        • 5:€2.7000
        • 30:€2.3000
        • 120:€2.1000
        • 300:€2.0000
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        STW36N60M6

        Mfr.#: STW36N60M6

        OMO.#: OMO-STW36N60M6

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        Mfr.#: VS-65EPS16LHM3

        OMO.#: OMO-VS-65EPS16LHM3-VISHAY

        		 DIODES - TO-247-E3
        CRCW0603680KFKEAC

        Mfr.#: CRCW0603680KFKEAC

        OMO.#: OMO-CRCW0603680KFKEAC-VISHAY-DALE

        		 D11/CRCW0603-C 100 680K 1% ET1
        B43545B9227M000

        Mfr.#: B43545B9227M000

        OMO.#: OMO-B43545B9227M000-EPCOS

        		 400V 220UF ALUMINIUM SNAP IN CAPACITOR, BX
        CRCW060333R0FKEAC

        Mfr.#: CRCW060333R0FKEAC

        OMO.#: OMO-CRCW060333R0FKEAC-VISHAY-DALE

        		 D11/CRCW0603-C 100 33R 1% ET1
        Disponibilidad
        Valores:
        Available
        En orden:
        2000
        Ingrese la cantidad:
        El precio actual de STGW30NC60WD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        4,23 US$
        4,23 US$
        10
        3,60 US$
        36,00 US$
        100
        3,12 US$
        312,00 US$
        250
        2,96 US$
        740,00 US$
        500
        2,65 US$
        1 325,00 US$
        1000
        2,24 US$
        2 240,00 US$
        2500
        2,13 US$
        5 325,00 US$
        5000
        2,05 US$
        10 250,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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