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IXGH10N170

IXGH10N170
Mfr. #:
IXGH10N170
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 20 Amps 1700 V 4 V Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXGH10N170 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGH10N170 DatasheetIXGH10N170 Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247AD-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1700 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
IXGH10N170
Embalaje:
Tubo
Corriente continua de colector Ic Max:
20 A
Altura:
21.46 mm
Longitud:
16.26 mm
Ancho:
5.3 mm
Marca:
IXYS
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
0.229281 oz
Tags
IXGH10N1, IXGH10N, IXGH10, IXGH1, IXGH, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
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IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
SINGLE IGBT, 1.2KV, 20A; Transistor Type; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Typ:97ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:79ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
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Parte # Mfg. Descripción Valores Precio
IXGH10N170
DISTI # IXGH10N170-ND		IXYS CorporationIGBT 1700V 20A 110W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.6180
IXGH10N170A
DISTI # IXGH10N170A-ND		IXYS CorporationIGBT 1700V 10A 140W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.8980
IXGH10N170
DISTI # 747-IXGH10N170		IXYS CorporationIGBT Transistors 20 Amps 1700 V 4 V Rds
RoHS: Compliant		33
  • 1:$6.8500
  • 10:$6.1700
  • 25:$5.6200
  • 50:$5.1300
  • 100:$5.0700
  • 250:$4.6200
  • 500:$4.2500
  • 1000:$3.7000
IXGH10N170A
DISTI # 747-IXGH10N170A		IXYS CorporationIGBT Transistors 20 Amps 1700 V 7 V Rds
RoHS: Compliant		43
  • 1:$7.1900
  • 10:$6.4700
  • 25:$5.9000
  • 50:$5.3900
  • 100:$5.3200
  • 250:$4.8500
  • 500:$4.4600
  • 1000:$3.8800
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IXGH10N170 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,85 US$
6,85 US$
10
6,17 US$
61,70 US$
25
5,62 US$
140,50 US$
50
5,13 US$
256,50 US$
100
5,07 US$
507,00 US$
250
4,62 US$
1 155,00 US$
500
4,25 US$
2 125,00 US$
1000
3,70 US$
3 700,00 US$
2500
3,65 US$
9 125,00 US$
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