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S25FL512SDPMFVG13

S25FL512SDPMFVG13
Mfr. #:
S25FL512SDPMFVG13
Fabricante:
Cypress Semiconductor
Descripción:
NOR Flash Nor
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S25FL512SDPMFVG13 Ficha de datos
Entrega:
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Más información:
S25FL512SDPMFVG13 más información S25FL512SDPMFVG13 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
NOR Flash
RoHS:
Y
Serie:
S25FL512S
Embalaje:
Carrete
Tipo de memoria:
NI
Marca:
Semiconductor de ciprés
Sensible a la humedad:
Yes
Tipo de producto:
NOR Flash
Cantidad de paquete de fábrica:
1450
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
MirrorBit
Tags
S25FL512SDPMFVG, S25FL512SDPMFV, S25FL512SDPM, S25FL512SDP, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
NOR Flash Serial-SPI 3V 512Mbit 512M x 1bit 8ns 16-Pin SOIC T/R
***et
512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SE
***ical
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 16-Pin SOIC W T/R
***i-Key
IC FLASH 512M SPI 66MHZ 16SOIC
***ark
TAPE AND REEL / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO16-SO3016 IN T&R PACKING, WITH RESET#
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descripción Valores Precio
S25FL512SDPMFVG13
DISTI # S25FL512SDPMFVG13-ND		Cypress SemiconductorIC FLASH 512M SPI 66MHZ 16SOIC
RoHS: Compliant
Min Qty: 1450
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1450:$6.3220
S25FL512SDPMFVG13
DISTI # 727-25FL512SDPMFVG13		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1450:$6.0200
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 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de S25FL512SDPMFVG13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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