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S25FL512SDPBHV210

S25FL512SDPBHV210
Mfr. #:
S25FL512SDPBHV210
Fabricante:
Cypress Semiconductor
Descripción:
NOR Flash 512-MBIT CMOS 3.0 V 65NM FLASH MEMORY
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S25FL512SDPBHV210 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
S25FL512SDPBHV210 más información S25FL512SDPBHV210 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
NOR Flash
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-24
Serie:
S25FL512S
Tamaño de la memoria:
512 Mbit
Tipo de interfaz:
SPI
Organización:
64 M x 8
Tipo de tiempo:
Asincrónico
Ancho del bus de datos:
8 bit
Voltaje de suministro - Min:
1.65 V
Voltaje de suministro - Máx:
3.6 V
Corriente de suministro - Máx .:
75 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 105 C
Embalaje:
Bandeja
Tipo de memoria:
NI
Velocidad:
66 MHz
Arquitectura:
Eclipse
Marca:
Semiconductor de ciprés
Sensible a la humedad:
Yes
Tipo de producto:
NOR Flash
Cantidad de paquete de fábrica:
338
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
MirrorBit
Tags
S25FL512SDPBHV2, S25FL512SDPBHV, S25FL512SDPB, S25FL512SDP, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 512 Mbit Density, FBGA-24, RoHS
***ark
TRAY PKGED / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAB024 IN TRAY PACKING
***i-Key
IC FLASH 512MBIT SPI/QUAD 24BGA
***ress Semiconductor SCT
Serial NOR Flash Memory, 256 Mbit Density, FBGA-24, RoHS
***et
NOR Flash Serial-SPI 3V 256Mbit 256M x 1bit 24-Pin BGA Tray
***ark
Tray Pkged / 256-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 66-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 256Kb, Bga-Fab024 In Tray Packing, With Reset#
***ical
NOR Flash Serial-SPI 3V/3.3V 128M-bit 128M x 1 8ns Automotive 24-Pin BGA Tray
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ark
TRAY PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, BGA-FAB024 IN TRAY PACKING, WITH RESET#
***-Wing Technology
8542.32.00.51 Surface Mount Tray 16MX8 ic memory 66MHz 8ns 8mm 0.0003A
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ark
Tray Pkged / 128-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 66-Mhz Spi (Serial Peripheral Interface) And Multi I/O Bus - 64Kb, Bga-Fab024 In Tray Packing, With Reset#
***i-Key
IC FLASH 128MBIT SPI/QUAD 24BGA
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descripción Valores Precio
S25FL512SDPBHV210
DISTI # S25FL512SDPBHV210-ND		Cypress SemiconductorIC FLASH 512M SPI 66MHZ 24BGA
RoHS: Compliant
Min Qty: 338
Container: Tray		Temporarily Out of Stock
  • 338:$6.8887
S25FL512SDPBHV210
DISTI # 727-S25FL512SDPBHV21		Cypress SemiconductorNOR Flash 512-MBIT CMOS 3.0 V 65NM FLASH MEMORY
RoHS: Compliant		0
  • 1:$10.7100
  • 10:$9.8100
  • 25:$8.9200
  • 50:$8.5000
  • 100:$8.0300
  • 250:$7.4200
  • 500:$6.4700
  • 1000:$6.0200
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Disponibilidad
Valores:
245
En orden:
2228
Ingrese la cantidad:
El precio actual de S25FL512SDPBHV210 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,71 US$
10,71 US$
10
9,81 US$
98,10 US$
25
8,92 US$
223,00 US$
50
8,50 US$
425,00 US$
100
8,03 US$
803,00 US$
250
7,42 US$
1 855,00 US$
500
6,47 US$
3 235,00 US$
1000
6,02 US$
6 020,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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