SI7962DP-T1-GE3

SI7962DP-T1-GE3
Mfr. #:
SI7962DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
RF Bipolar Transistors MOSFET 40V 11.1A 3.5W 17mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7962DP-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay / Siliconix
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
SI7962DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
2 Channel
Configuración
Doble
Tipo transistor
2 N-Channel
Disipación de potencia Pd
1.4 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
7.1 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Resistencia a la fuente de desagüe de Rds
17 mOhms
Polaridad del transistor
Canal N
Tags
SI7962, SI796, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
SI7962DP-T1-GE3
DISTI # 781-SI7962DP-GE3
Vishay IntertechnologiesMOSFET 40V 11.1A 3.5W 17mohm @ 10V
RoHS: Compliant
0
  • 3000:$1.7200
Imagen Parte # Descripción
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3

MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3

MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3-317

RF Bipolar Transistors MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3-VISHAY

RF Bipolar Transistors MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SI7962DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,58 US$
2,58 US$
10
2,45 US$
24,51 US$
100
2,32 US$
232,20 US$
500
2,19 US$
1 096,50 US$
1000
2,06 US$
2 064,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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