OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IRF5305LPBF

IRF5305LPBF
Mfr. #:
IRF5305LPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET P-CH 55V 31A TO-262
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF5305LPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IRF5305, IRF530, IRF53, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
P CHANNEL MOSFET, -55V, 31A, TO-262; Tra; P CHANNEL MOSFET, -55V, 31A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V
***ure Electronics
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
*** Source Electronics
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube / MOSFET N-CH 55V 49A TO-262
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***roFlash
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:49A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94
***ure Electronics
Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-262-3
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
*** Stop Electro
Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:51A; On Resistance, Rds(on):13.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-262;PD 110W;VGS +/-20V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***el Electronic
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:48A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ical
Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-262 Rail
***emi
75A, 55V, 0.008 Ohm, N-Channel UltraFET® Power MOSFETs.
***r Electronics
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 131A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:131A; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***(Formerly Allied Electronics)
MOSFET; 55V; 104A; 8 MOHM; 86.7 NC QG; LOGIC LEVEL; TO-262
***et Europe
Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:104A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRF5305LPBF
DISTI # IRF5305LPBF-ND		Infineon Technologies AGMOSFET P-CH 55V 31A TO-262
RoHS: Compliant
Min Qty: 650
Container: Tube		Limited Supply - Call
    IRF5305LPBF
    DISTI # 70018222    		Infineon Technologies AGMOSFET,P-CHANNEL,-55V,-31A,60 MOHM,42 NC QG,TO-262
    RoHS: Compliant    		0
    • 1:$1.8700
    • 2:$1.8330
    • 5:$1.7770
    • 10:$1.7020
    • 25:$1.5900
    IRF5305LPBF
    DISTI # 942-IRF5305LPBF    		Infineon Technologies AGMOSFET MOSFT PCh -55V -31A 60mOhm 42nC
    RoHS: Compliant    		0
      IRF5305LPBFInternational Rectifier 175
        IRF5305LPBFInternational Rectifier 
        RoHS: Not Compliant        		Europe - 900
          IRF5305LPBF
          DISTI # 1375043          		Infineon Technologies AGP CHANNEL MOSFET, -55V, 31A, TO-262
          RoHS: Compliant          		0
          • 1:$2.9900
          • 10:$2.4600
          • 100:$1.9900
          • 500:$1.7800
          • 1000:$1.5800
          • 2500:$1.4700
          • 5000:$1.4200
          • 10000:$1.3300
          Imagen Parte # Descripción
          IRF530SPBF

          Mfr.#: IRF530SPBF

          OMO.#: OMO-IRF530SPBF

          		 MOSFET N-CH 100V HEXFET MOSFET D2-PA
          IRF530STRRPBF

          Mfr.#: IRF530STRRPBF

          OMO.#: OMO-IRF530STRRPBF

          		 MOSFET N-CH 100V HEXFET MOSFET D2-PA
          IRF530N,127

          Mfr.#: IRF530N,127

          OMO.#: OMO-IRF530N-127-NXP-SEMICONDUCTORS

          		 MOSFET N-CH 100V 17A TO220AB
          IRF5305STR

          Mfr.#: IRF5305STR

          OMO.#: OMO-IRF5305STR-1190

          		 Nuevo y original
          IRF530APBF

          Mfr.#: IRF530APBF

          OMO.#: OMO-IRF530APBF-1190

          		 Nuevo y original
          IRF530NPBF,IRF540NPBF,IR

          Mfr.#: IRF530NPBF,IRF540NPBF,IR

          OMO.#: OMO-IRF530NPBF-IRF540NPBF-IR-1190

          		 Nuevo y original
          IRF530NSTRLPBF

          Mfr.#: IRF530NSTRLPBF

          OMO.#: OMO-IRF530NSTRLPBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 100V 17A D2PAK
          IRF531N

          Mfr.#: IRF531N

          OMO.#: OMO-IRF531N-1190

          		 Nuevo y original
          IRF533

          Mfr.#: IRF533

          OMO.#: OMO-IRF533-1190

          		 MOSFET Transistor, N-Channel, TO-220AB
          IRF533FI

          Mfr.#: IRF533FI

          OMO.#: OMO-IRF533FI-1190

          		 Nuevo y original
          Disponibilidad
          Valores:
          Available
          En orden:
          5500
          Ingrese la cantidad:
          El precio actual de IRF5305LPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          2,38 US$
          2,38 US$
          10
          2,27 US$
          22,66 US$
          100
          2,15 US$
          214,65 US$
          500
          2,03 US$
          1 013,65 US$
          1000
          1,91 US$
          1 908,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
          Empezar con
          Nuevos productos
          More Newest Products
          Top