GS8161E18DGT-400

GS8161E18DGT-400
Mfr. #:
GS8161E18DGT-400
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161E18DGT-400 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161E18DGT-400 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
4 ns
Frecuencia máxima de reloj:
400 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
255 mA, 335 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TQFP-100
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161E18DGT
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
36
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS8161E18DGT, GS8161E18DG, GS8161E1, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 4ns/2.5ns 100-Pin TQFP
***p One Stop Global
SRAM Chip Sync Dual 3.3V 18M-bit 1M x 18 3.1ns 100-Pin TQFP
***-Wing Technology
e3 Surface Mount Tray 1MX18 ic memory 200MHz 3.1ns 1.6mm 475mA
*** Stop Electro
Cache SRAM, 1MX18, CMOS, PQFP100
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,pipeline,sync,1Mb X 18,200Mhz,3.3V Or 2.5V I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61LPS102418A-200TQLI
***et
SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 7.5ns 100-Pin TQFP
***-Wing Technology
e3 Surface Mount Tray 1MX18 ic memory 117MHz 7.5ns 1.6mm 250mA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,flow-Through,sync,1Mb X 18,7.5Ns,3.3V Or 2.5V I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61LF102418A-7.5TQLI
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP Tray
***ure Electronics
Synchronous SRAM ZBT 18 Mb( 1M x 18), 166 Mhz TQFP-100
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***i-Key Marketplace
IC SRAM 18MBIT PARALLEL 100TQFP
***pmh
STANDARD SRAM, 1MX36, 6.5NS PDSO
***et
SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 3.1ns 100-Pin TQFP
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,"no-Wait"/Pipeline,sync,1Mb X 18,200Mhz,3.3V/2.5V - I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61NLP102418-200TQLI
***ure Electronics
AS8C161831 Series 18 Mb (1 M x 18) 2.5 V 3.2 ns Synchronous RAM - TQFP100
***et
SRAM Chip Sync Dual 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP
***se
18Mb SYNC SRAM 1M x 18 ZBT(Pipelined) 2.5V 166MHz 100TQFP
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 4.2ns 100-Pin TQFP Tray
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***(Formerly Allied Electronics)
18M (1MX18) 2.5V CORE ZBT SRAM
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS8161E18DD-250IV

Mfr.#: GS8161E18DD-250IV

OMO.#: OMO-GS8161E18DD-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-250V

Mfr.#: GS8161E18DGD-250V

OMO.#: OMO-GS8161E18DGD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-400I

Mfr.#: GS8161E18DGD-400I

OMO.#: OMO-GS8161E18DGD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-200

Mfr.#: GS8161E18DGD-200

OMO.#: OMO-GS8161E18DGD-200

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-200I

Mfr.#: GS8161E18DGD-200I

OMO.#: OMO-GS8161E18DGD-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-333V

Mfr.#: GS8161E18DGD-333V

OMO.#: OMO-GS8161E18DGD-333V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-250IV

Mfr.#: GS8161E18DGD-250IV

OMO.#: OMO-GS8161E18DGD-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-333I

Mfr.#: GS8161E18DGD-333I

OMO.#: OMO-GS8161E18DGD-333I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-400

Mfr.#: GS8161E18DGT-400

OMO.#: OMO-GS8161E18DGT-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-375I

Mfr.#: GS8161E18DGD-375I

OMO.#: OMO-GS8161E18DGD-375I

SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de GS8161E18DGT-400 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
36
23,79 US$
856,44 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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