GS8161E18DGD-333V

GS8161E18DGD-333V
Mfr. #:
GS8161E18DGD-333V
Fabricante:
GSI Technology
Descripción:
SRAM 1.8/2.5V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161E18DGD-333V Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161E18DGD-333V más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
5 ns
Frecuencia máxima de reloj:
333 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
220 mA, 280 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161E18DGD
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
18
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS8161E18DGD-33, GS8161E18DGD-3, GS8161E18DGD, GS8161E18DG, GS8161E1, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5ns/3ns 165-Pin FBGA
***ical
SRAM Chip Sync Single 1.8V 18M-bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1318 Tray ic memory 250MHz 450ps 380mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165
***ponent Stockers USA
1M X 18 DDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1318 Tray ic memory 250MHz 450ps 380mA 18Mb
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
DDR SRAM, 1MX18, 0.45NS, CMOS, P
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1318 Tray ic memory 250MHz 450ps 380mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, FBGA-165, RoHS
***ponent Stockers USA
1M X 18 DDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***pmh
IC SRAM 32M PARALLEL 52TSOP II
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 1M X 18, 165 Ball Fbga (13X15 Mm), Rohs |Integrated Silicon Solution (Issi) IS61DDB21M18A-300B4L
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS8161E18DGD-250V

Mfr.#: GS8161E18DGD-250V

OMO.#: OMO-GS8161E18DGD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-400

Mfr.#: GS8161E18DGD-400

OMO.#: OMO-GS8161E18DGD-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150IV

Mfr.#: GS8161E18DD-150IV

OMO.#: OMO-GS8161E18DD-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-200I

Mfr.#: GS8161E18DGD-200I

OMO.#: OMO-GS8161E18DGD-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-333

Mfr.#: GS8161E18DGT-333

OMO.#: OMO-GS8161E18DGT-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150V

Mfr.#: GS8161E18DD-150V

OMO.#: OMO-GS8161E18DD-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-150V

Mfr.#: GS8161E18DGD-150V

OMO.#: OMO-GS8161E18DGD-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-375

Mfr.#: GS8161E18DGT-375

OMO.#: OMO-GS8161E18DGT-375

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-375

Mfr.#: GS8161E18DGD-375

OMO.#: OMO-GS8161E18DGD-375

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-333IV

Mfr.#: GS8161E18DGD-333IV

OMO.#: OMO-GS8161E18DGD-333IV

SRAM 1.8/2.5V 1M x 18 18M
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de GS8161E18DGD-333V es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
27,62 US$
27,62 US$
25
25,64 US$
641,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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