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UF3C065040K4S

UF3C065040K4S
Mfr. #:
UF3C065040K4S
Fabricante:
UnitedSiC
Descripción:
MOSFET 650V 42m? SiC Cascode Fast
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
UF3C065040K4S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
UF3C065040K4S más información
Atributo del producto
Valor de atributo
Fabricante:
UnidosSiC
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
54 A
Rds On - Resistencia de la fuente de drenaje:
52 Ohms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
43 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
326 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Tubo
Serie:
UF3C
Tipo de transistor:
1 N-Channel
Marca:
UnidosSiC
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tags
UF3C06504, UF3C0, UF3C, UF3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
UF3C High-Performance SiC FETs
United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. The F3 SiC fast JFETs series exhibits very fast switching using a TO-247, or D2PAK-3L package. Each device features the best reverse recovery characteristics of any device of similar ratings.
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Disponibilidad
Valores:
310
En orden:
2293
Ingrese la cantidad:
El precio actual de UF3C065040K4S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
35,74 US$
35,74 US$
5
34,13 US$
170,65 US$
10
33,07 US$
330,70 US$
25
30,39 US$
759,75 US$
50
29,67 US$
1 483,50 US$
100
28,24 US$
2 824,00 US$
250
25,91 US$
6 477,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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