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GA10SICP12-263

GA10SICP12-263
Mfr. #:
GA10SICP12-263
Fabricante:
GeneSiC Semiconductor
Descripción:
TRANS SJT 1200V 25A TO263-7
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GA10SICP12-263 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GA10SICP12-263 más información
Atributo del producto
Valor de atributo
Fabricante
Semiconductor GeneSiC
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Unidad de peso
0.056438 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-7
Tecnología
Sic
Número de canales
1 Channel
Configuración
Único
Disipación de potencia Pd
170 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
25 A
Vds-Drain-Source-Breakdown-Voltage
1.2 kV
Resistencia a la fuente de desagüe de Rds
100 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
55 nC
Modo de canal
Mejora
Tags
GA10S, GA10, GA1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eSiC Semiconductor
SiC Junction Transistor 1200V 100mΩ TO-263-7
***i-Key
TRANS SJT 1200V 25A D2PAK
***ark
T &R / Sic C P
Silicon Carbide Junction Transistors/Schottky Diode Co-Packs
GeneSiC Silicon Carbide Junction Transistors/Schottky Diode Co-Packs are a hybrid silicon IGBT with a silicon carbide (SiC) rectifier in a module. GeneSiC uses the latest generation of low-loss IGBTs and pairs them with their silicon carbide diodes. Replacing the traditional silicon freewheeling diode (FWD) with silicon carbide schottky rectifiers offers revolutionary switching performance. These improvements will usher in a new era in power conversion applications. These devices are offered in TO-263-7L or SOT-227 packages.Learn More
Parte # Mfg. Descripción Valores Precio
GA10SICP12-263
DISTI # 1242-1318-ND		GeneSic Semiconductor IncTRANS SJT 1200V 25A TO263-7
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$28.8945
GA10SICP12-263
DISTI # 905-GA10SICP12-263		GeneSic Semiconductor IncMOSFET 1200V 25A Std SIC CoPak
RoHS: Compliant		58
  • 1:$39.1000
  • 5:$37.1700
  • 10:$36.1800
  • 25:$35.1700
  • 50:$33.2400
  • 100:$30.8900
  • 250:$28.3500
Imagen Parte # Descripción
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263

 MOSFET 1200V 25A Std SIC CoPak
GA10SICP12-247

Mfr.#: GA10SICP12-247

OMO.#: OMO-GA10SICP12-247

 MOSFET 1200V 25A SIC CoPak
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263-GENESIC-SEMICONDUCTOR

 TRANS SJT 1200V 25A TO263-7
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de GA10SICP12-263 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
42,52 US$
42,52 US$
10
40,40 US$
403,99 US$
100
38,27 US$
3 827,25 US$
500
36,15 US$
18 073,15 US$
1000
34,02 US$
34 020,00 US$
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