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IPB110N20N3LFATMA1

IPB110N20N3LFATMA1
Mfr. #:
IPB110N20N3LFATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 200 D2PAK-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB110N20N3LFATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPB110, IPB11, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 200 D2PAK-3
***ronik
N-CH 200V 88A 11mOhm D2PAK
***et Europe
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 200V, 88A, 250W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 88A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 200V, 88A, 250W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:88A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0098ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.2V; Dissipazione di Potenza Pd:250W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
Parte # Mfg. Descripción Valores Precio
IPB110N20N3LFATMA1
DISTI # V72:2272_17076776		Infineon Technologies AGDIFFERENTIATED MOSFETS58
  • 25:$5.6780
  • 10:$5.9310
  • 1:$6.5000
IPB110N20N3LFATMA1
DISTI # V36:1790_17076776		Infineon Technologies AGDIFFERENTIATED MOSFETS0
    IPB110N20N3LFATMA1
    DISTI # IPB110N20N3LFATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 200 D2PAK-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2966In Stock
    • 500:$5.1425
    • 100:$6.1379
    • 10:$7.4650
    • 1:$8.2900
    IPB110N20N3LFATMA1
    DISTI # IPB110N20N3LFATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 200 D2PAK-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2966In Stock
    • 500:$5.1425
    • 100:$6.1379
    • 10:$7.4650
    • 1:$8.2900
    IPB110N20N3LFATMA1
    DISTI # IPB110N20N3LFATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 200 D2PAK-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		2000In Stock
    • 2000:$4.1875
    • 1000:$4.3485
    IPB110N20N3LFATMA1
    DISTI # 26196752    		Infineon Technologies AGDIFFERENTIATED MOSFETS58
    • 25:$6.1039
    • 10:$6.3758
    • 2:$6.9875
    IPB110N20N3LFATMA1
    DISTI # SP001503864    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001503864)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 1000
    • 1000:€3.8900
    • 2000:€3.7900
    • 4000:€3.5900
    • 6000:€3.3900
    • 10000:€3.0900
    IPB110N20N3LFATMA1
    DISTI # IPB110N20N3LFATMA1    		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB110N20N3LFATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$4.1900
    • 2000:$3.9900
    • 4000:$3.8900
    • 6000:$3.6900
    • 10000:$3.6900
    IPB110N20N3LFATMA1
    DISTI # 93AC7102    		Infineon Technologies AGMOSFET, N-CH, 200V, 88A, 250W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes1000
    • 500:$3.6200
    • 250:$3.9800
    • 100:$4.1700
    • 50:$4.4800
    • 25:$4.8000
    • 10:$5.0300
    • 1:$5.5700
    IPB110N20N3LFATMA1
    DISTI # 726-IPB110N20N3LFATM    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		1825
    • 1:$6.9600
    • 10:$6.2900
    • 25:$6.0000
    • 100:$5.2100
    • 250:$4.9700
    • 500:$4.5300
    • 1000:$3.9500
    • 2000:$3.8000
    IPB110N20N3LFATMA1
    DISTI # XSKDRABV0021212    		Infineon Technologies AG 
    RoHS: Compliant    		3000 in Stock0 on Order
    • 3000:$6.0000
    • 1000:$6.4320
    IPB110N20N3LFATMA1
    DISTI # 2986460    		Infineon Technologies AGMOSFET, N-CH, 200V, 88A, 250W, TO-263
    RoHS: Compliant    		1000
    • 100:£4.0100
    • 50:£4.3300
    • 10:£4.6400
    • 5:£5.3500
    • 1:£5.8300
    IPB110N20N3LFATMA1
    DISTI # 2986460    		Infineon Technologies AGMOSFET, N-CH, 200V, 88A, 250W, TO-263
    RoHS: Compliant    		1000
    • 100:$5.9000
    • 50:$6.5880
    • 25:$7.6494
    • 10:$7.7958
    • 5:$8.3997
    • 1:$9.3147
    Imagen Parte # Descripción
    IPB110N20N3LFATMA1

    Mfr.#: IPB110N20N3LFATMA1

    OMO.#: OMO-IPB110N20N3LFATMA1

    		 MOSFET
    IPB110N20N3LFATMA1

    Mfr.#: IPB110N20N3LFATMA1

    OMO.#: OMO-IPB110N20N3LFATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200 D2PAK-3
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de IPB110N20N3LFATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,27 US$
    5,27 US$
    10
    5,00 US$
    50,04 US$
    100
    4,74 US$
    474,03 US$
    500
    4,48 US$
    2 238,50 US$
    1000
    4,21 US$
    4 213,60 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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