S29GL01GS10FHI010

S29GL01GS10FHI010
Mfr. #:
S29GL01GS10FHI010
Fabricante:
Cypress Semiconductor
Descripción:
IC FLASH 1G PARALLEL 64BGA GL-S
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S29GL01GS10FHI010 Ficha de datos
Entrega:
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Más información:
S29GL01GS10FHI010 más información S29GL01GS10FHI010 Product Details
Atributo del producto
Valor de atributo
Fabricante
Cypress Semiconductor Corp
categoria de producto
Memoria
Serie
GL-S
embalaje
Embalaje alternativo de bandeja
Estilo de montaje
SMD / SMT
Rango de temperatura de funcionamiento
- 40 C to + 85 C
Paquete-Estuche
FBGA-64
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Parallel
Suministro de voltaje
2.7 V ~ 3.6 V
Paquete de dispositivo de proveedor
64-Fortified BGA (13x11)
Tamaño de la memoria
1G (64M x 16)
Tipo de memoria
FLASH - NOR
Velocidad
100ns
Arquitectura
MirrorBit Eclipse
Formato de memoria
DESTELLO
Estándar
Common Flash Interface (CFI)
Tipo de interfaz
Parallel
Organización
128 M x 8
Suministro-Corriente-Máx.
100 mA
Ancho de bus de datos
8 bit
Suministro-Voltaje-Máx.
3.6 V
Suministro-Voltaje-Mín.
2.7 V
Tipo de tiempo
Asincrónico
Tags
S29GL01GS10FHI, S29GL01GS10FH, S29GL01GS10F, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ical
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 100ns 64-Pin Fortified BGA Tray
***ark
TRAY PKGED / 1G BIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Parte # Mfg. Descripción Valores Precio
S29GL01GS10FHI010
DISTI # C1S725700079445
Cypress SemiconductorUnclassified1390
  • 200:$9.0800
  • 100:$9.7900
  • 50:$12.7000
  • 10:$13.9000
  • 5:$16.9000
  • 1:$18.9000
S29GL01GS10FHI010
DISTI # 428-4066-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 1
Container: Tray
1749In Stock
  • 1080:$8.0845
  • 540:$8.3633
  • 360:$8.4500
  • 180:$8.8898
  • 50:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS10FHI010
DISTI # 727-S29GL01GS10FHI01
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
180
  • 1:$12.9800
  • 10:$11.8000
  • 25:$10.9200
  • 50:$10.0300
Imagen Parte # Descripción
S29GL01GS11DHSS63

Mfr.#: S29GL01GS11DHSS63

OMO.#: OMO-S29GL01GS11DHSS63

NOR Flash Nor
S29GL01GT11DHB010

Mfr.#: S29GL01GT11DHB010

OMO.#: OMO-S29GL01GT11DHB010-CYPRESS-SEMICONDUCTOR

IC 1 GB FLASH MEMORY
S29GL01GT11FHB020

Mfr.#: S29GL01GT11FHB020

OMO.#: OMO-S29GL01GT11FHB020-CYPRESS-SEMICONDUCTOR

IC 1 GB FLASH MEMORY
S29GL01GS12TFVV20

Mfr.#: S29GL01GS12TFVV20

OMO.#: OMO-S29GL01GS12TFVV20-CYPRESS-SEMICONDUCTOR

Flash Memory 1G BIT, 3V, 120NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED WITH VIO
S29GL01GS11DHIV13

Mfr.#: S29GL01GS11DHIV13

OMO.#: OMO-S29GL01GS11DHIV13-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GS11TFV023

Mfr.#: S29GL01GS11TFV023

OMO.#: OMO-S29GL01GS11TFV023-CYPRESS-SEMICONDUCTOR

Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
S29GL01GS11FHSS50

Mfr.#: S29GL01GS11FHSS50

OMO.#: OMO-S29GL01GS11FHSS50-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GS11DHSS10

Mfr.#: S29GL01GS11DHSS10

OMO.#: OMO-S29GL01GS11DHSS10-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GT12DHVV13

Mfr.#: S29GL01GT12DHVV13

OMO.#: OMO-S29GL01GT12DHVV13-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL GL-T
S29GL01GS10TFI01

Mfr.#: S29GL01GS10TFI01

OMO.#: OMO-S29GL01GS10TFI01-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de S29GL01GS10FHI010 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,78 US$
11,78 US$
10
11,19 US$
111,86 US$
100
10,60 US$
1 059,75 US$
500
10,01 US$
5 004,40 US$
1000
9,42 US$
9 420,00 US$
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