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S29GL01GS11DHIV13

S29GL01GS11DHIV13
Mfr. #:
S29GL01GS11DHIV13
Fabricante:
Cypress Semiconductor
Descripción:
IC FLASH 1G PARALLEL 64BGA GL-S
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S29GL01GS11DHIV13 Ficha de datos
Entrega:
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ECAD Model:
Más información:
S29GL01GS11DHIV13 más información S29GL01GS11DHIV13 Product Details
Atributo del producto
Valor de atributo
Fabricante
CIPRÉS
categoria de producto
Memoria
Serie
GL-S
embalaje
Tape & Reel (TR)
Paquete-Estuche
56-TFSOP (0.724", 18.40mm Width)
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Parallel
Suministro de voltaje
1.65 V ~ 3.6 V
Paquete de dispositivo de proveedor
64-Fortified BGA (9x9)
Tamaño de la memoria
1G (64M x 16)
Tipo de memoria
FLASH - NOR
Velocidad
110ns
Formato de memoria
DESTELLO
Tags
S29GL01GS11DHIV, S29GL01GS11DHI, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEA
***ical
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin Fortified BGA T/R
***ark
Tape And Reel / 1G Bit, 3V, 110Ns, 64-Ball Fbga, Page Mode Flash Memory Featuring 65 Nm Mirrorbit Process Technology, Vio, Highest Address Sector Protected
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Parte # Mfg. Descripción Valores Precio
S29GL01GS11DHIV13
DISTI # V72:2272_06272376		Cypress SemiconductorNOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin FBGA T/R
RoHS: Compliant		1780
  • 75000:$7.5310
  • 30000:$7.6140
  • 15000:$7.6960
  • 6000:$7.7780
  • 3000:$7.8610
  • 1000:$8.7340
  • 500:$9.7050
  • 250:$10.2530
  • 100:$10.9400
  • 50:$11.5540
  • 25:$12.9780
  • 10:$13.5580
  • 1:$14.7580
S29GL01GS11DHIV13
DISTI # S29GL01GS11DHIV13-ND		Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 2200
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2200:$7.7500
S29GL01GS11DHIV13
DISTI # 29064529		Cypress SemiconductorNOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin FBGA T/R
RoHS: Compliant		1780
  • 1000:$8.7340
  • 500:$9.7050
  • 250:$10.2530
  • 100:$10.9400
  • 50:$11.5540
  • 25:$12.9780
  • 10:$13.5580
  • 1:$14.7580
S29GL01GS11DHIV13
DISTI # 51Y1538		Cypress SemiconductorTAPE AND REEL / 1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, HIGHEST ADDRESS SECTOR PROTECTED0
  • 1:$11.8000
S29GL01GS11DHIV13
DISTI # 727-29GL01GS11DHIV13		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1:$12.9800
  • 10:$11.8000
  • 25:$10.9200
  • 50:$10.0300
  • 250:$9.1400
  • 500:$8.5500
  • 1000:$7.8500
Imagen Parte # Descripción
S29GL01GT12DHN023

Mfr.#: S29GL01GT12DHN023

OMO.#: OMO-S29GL01GT12DHN023

 NOR Flash Nor
S29GL01GT11TFIV40

Mfr.#: S29GL01GT11TFIV40

OMO.#: OMO-S29GL01GT11TFIV40

 NOR Flash IC 1 Gb FLASH MEMORY
S29GL01GS11TFB020

Mfr.#: S29GL01GS11TFB020

OMO.#: OMO-S29GL01GS11TFB020

 NOR Flash Nor
S29GL01GS12DHVV13

Mfr.#: S29GL01GS12DHVV13

OMO.#: OMO-S29GL01GS12DHVV13-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL 64FBGA GL-S
S29GL01GT10TFI013

Mfr.#: S29GL01GT10TFI013

OMO.#: OMO-S29GL01GT10TFI013-CYPRESS-SEMICONDUCTOR

 NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 56-Pin TSOP T/R
S29GL01GT11DHIV10

Mfr.#: S29GL01GT11DHIV10

OMO.#: OMO-S29GL01GT11DHIV10-CYPRESS-SEMICONDUCTOR

 NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns 64-Pin Fortified BGA Tray
S29GL01GS11WEI029

Mfr.#: S29GL01GS11WEI029

OMO.#: OMO-S29GL01GS11WEI029-CYPRESS-SEMICONDUCTOR

 Flash Memory 1G BIT, 3V, 110NS, WAFER, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
S29GL01GS10FAI010

Mfr.#: S29GL01GS10FAI010

OMO.#: OMO-S29GL01GS10FAI010-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GP11TFIR10+

Mfr.#: S29GL01GP11TFIR10+

OMO.#: OMO-S29GL01GP11TFIR10--1151

 IC FLASH 1G PARALLEL 56TSOP
S29GL01GS11TFI01

Mfr.#: S29GL01GS11TFI01

OMO.#: OMO-S29GL01GS11TFI01-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de S29GL01GS11DHIV13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,30 US$
11,30 US$
10
10,73 US$
107,32 US$
100
10,17 US$
1 016,69 US$
500
9,60 US$
4 801,00 US$
1000
9,04 US$
9 037,20 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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