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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call |
|
| IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call |
|
| IPB60R190C6 DISTI # IPB60R190C6 | Infineon Technologies AG | Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 | |
| IPB60R190C6 DISTI # SP000641916 | Infineon Technologies AG | Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB60R190C6 DISTI # SP000641916 | Infineon Technologies AG | Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB60R190C6XT DISTI # IPB60R190C6ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R190C6ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB60R190C6ATMA1 DISTI # 30T1830 | Infineon Technologies AG | MOSFET,N CH,600V,20.2A,TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes | 0 |
|
| IPB60R190C6 DISTI # 726-IPB60R190C6 | Infineon Technologies AG | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant | 0 |
|
| IPB60R190C6ATMA1 DISTI # 726-IPB60R190C6ATMA1 | Infineon Technologies AG | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant | 0 |
|
| IPB60R190C6 | Infineon Technologies AG | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 3 |
|
| IPB60R190C6ATMA1 DISTI # 7533005P | Infineon Technologies AG | MOSFET N-CH 650V 20.2A COOLMOS C6 TO263, RL | 200 |
|
| IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,600V,20.2A,151W,PG-TO263-3 | 133 |
|
| IPB60R190C6 | Infineon Technologies AG | 600V,20.2A,N channel Power MOSFET | 7 |
|
| IPB60R190C6ATMA1 DISTI # 1860814 | Infineon Technologies AG | MOSFET,N CH,600V,20.2A,TO263 RoHS: Compliant | 0 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IPB60R199CP OMO.#: OMO-IPB60R199CP |
MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP |
|
Mfr.#: IPB60R125CFD7ATMA1 OMO.#: OMO-IPB60R125CFD7ATMA1 |
MOSFET |
|
Mfr.#: IPB60R280C6ATMA1 |
MOSFET N-CH 600V 13.8A TO263 |
|
|
Mfr.#: IPB60R380P6ATMA1 |
MOSFET N-CH 600V TO263-3 |
|
|
Mfr.#: IPB60R190C6 6R190C6 OMO.#: OMO-IPB60R190C6-6R190C6-1190 |
Nuevo y original |
|
|
Mfr.#: IPB600N25N3 G OMO.#: OMO-IPB600N25N3-G-1190 |
Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G) |
|
|
Mfr.#: IPB60R119CP OMO.#: OMO-IPB60R119CP-1190 |
Nuevo y original |
|
|
Mfr.#: IPB60R165CP 6R165P OMO.#: OMO-IPB60R165CP-6R165P-1190 |
Nuevo y original |
|
|
Mfr.#: IPB60R520CPATMA1 |
MOSFET N-CH 600V 6.8A TO-263 |
|
|
Mfr.#: IPB60R250CP OMO.#: OMO-IPB60R250CP-124 |
Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP |
