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TGF2160

TGF2160
Mfr. #:
TGF2160
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2160 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TGF2160 más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
pHEMT
Tecnología:
GaAs
Ganar:
10.4 dB
Vds - Voltaje de ruptura de drenaje-fuente:
12 V
Vgs - Voltaje de ruptura de puerta-fuente:
- 7 V
Id - Corriente de drenaje continua:
517 mA
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
5.6 W
Estilo de montaje:
SMD / SMT
Embalaje:
Paquete de gel
Configuración:
Doble
Frecuencia de operación:
20 GHz
Rango de temperatura de funcionamiento:
- 65 C to + 150 C
Producto:
RF JFET
Escribe:
GaAs pHEMT
Marca:
Qorvo
Transconductancia directa - Mín .:
619 mS
Número de canales:
2 Channel
P1dB - Punto de compresión:
32.5 dBm
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
100
Subcategoría:
Transistores
Parte # Alias:
1098617
Tags
TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
Transistor, DC- 20 GHz, 32.5 dBm, 10.4 dB, 8V, DIE
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
TGF2160 1600µm Discrete GaAs pHEMT
Qorvo TGF2160 1600µm Discrete GaAs pHEMT operates from DC to 20GHz and is designed using the Qorvo 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. Qorvo TGF2160 typically provides 32.5dBm of output power at P1dB with gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Parte # Mfg. Descripción Valores Precio
TGF2160
DISTI # 772-TGF2160		QorvoRF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
RoHS: Compliant		0
  • 100:$17.2700
  • 300:$16.1400
  • 500:$15.0900
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Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de TGF2160 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
100
17,27 US$
1 727,00 US$
300
16,14 US$
4 842,00 US$
500
15,09 US$
7 545,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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