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BSZ0909NSATMA1

BSZ0909NSATMA1
Mfr. #:
BSZ0909NSATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 34V 9A 8TSDSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ0909NSATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSZ0909NS, BSZ0909, BSZ090, BSZ09, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 34 V 12 mOhm 13 nC OptiMOS™ Power Mosfet - TSDSON-8
***nell
MOSFET, N-CH, 34V, 36A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 34V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 25W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
*** Electronics
N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11
***ure Electronics
N-Channel 30 V 9 mOhm 15 nC OptiMOS™3 Power-Transistor - TO-252-3
***ark
MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ark
N CH POWER MOSFET, HEXFET, 30V, 14A, PQFN-8; Transistor Polarity:N Channel; Cont
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***ure Electronics
Single N-Channel 30 V 9 mOhm 15 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
*** Source Electronics
Trans MOSFET N-CH 30V 14A 8-Pin QFN EP T/R / MOSFET N-CH 30V 44A 5X6 PQFN
***nell
MOSFET, N-CH, 30V, 44A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 30W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***ure Electronics
N-Channel 30 V 44 A 9.2 mO 15 nC SMT OptiMOS Power Mosfet - TDSON-8
***nell
MOSFET, N-CH, 34V, 44A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 34V; On Resistance Rds(on): 0.0077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 27W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***roFlash
Trans MOSFET N-CH 30V 13.1A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
N-Channel 30V 13.1A (Ta), 43A (Tc) 1.6W (Ta) Surface Mount TO-252-3
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***emi
30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 7.4A/35A 5DFN
***el Electronic
RES SMD 392 OHM 1% 1/4W 1210
***emi
30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL
***Yang
Trans MOSFET N-CH 30V 20A 8-Pin SO-8 FL T/R - Tape and Reel
***ponent Stockers USA
7.4 A 30 V 0.013 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Parte # Mfg. Descripción Valores Precio
BSZ0909NSATMA1
DISTI # V72:2272_06391041		Infineon Technologies AGTrans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R
RoHS: Compliant		4475
  • 3000:$0.2562
  • 1000:$0.2590
  • 500:$0.3265
  • 250:$0.3958
  • 100:$0.4353
  • 25:$0.5533
  • 10:$0.6315
  • 1:$0.7233
BSZ0909NSATMA1
DISTI # V36:1790_06391041		Infineon Technologies AGTrans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
  • 5000000:$0.1821
  • 2500000:$0.1823
  • 500000:$0.1959
  • 50000:$0.2180
  • 5000:$0.2216
BSZ0909NSATMA1
DISTI # BSZ0909NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 34V 9A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4900In Stock
  • 1000:$0.2705
  • 500:$0.3381
  • 100:$0.4277
  • 10:$0.5580
  • 1:$0.6300
BSZ0909NSATMA1
DISTI # BSZ0909NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 34V 9A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4900In Stock
  • 1000:$0.2705
  • 500:$0.3381
  • 100:$0.4277
  • 10:$0.5580
  • 1:$0.6300
BSZ0909NSATMA1
DISTI # BSZ0909NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 34V 9A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.2079
  • 10000:$0.2134
  • 5000:$0.2216
BSZ0909NSATMA1
DISTI # 32892484		Infineon Technologies AGTrans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.1666
BSZ0909NSATMA1
DISTI # 30737657		Infineon Technologies AGTrans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R
RoHS: Compliant		4475
  • 36:$0.7233
BSZ0909NSATMA1
DISTI # SP000832568		Infineon Technologies AGTrans MOSFET N-CH 34V 9A 8-Pin TSDSON T/R (Alt: SP000832568)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.1579
  • 30000:€0.1699
  • 20000:€0.1839
  • 10000:€0.2009
  • 5000:€0.2459
BSZ0909NSXT
DISTI # BSZ0909NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 34V 9A 8-Pin TSDSON - Tape and Reel (Alt: BSZ0909NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.1579
  • 30000:$0.1609
  • 20000:$0.1669
  • 10000:$0.1729
  • 5000:$0.1799
BSZ0909NSATMA1
DISTI # 12AC9457		Infineon Technologies AGMOSFET, N-CH, 34V, 36A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:34V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes966
  • 1000:$0.2860
  • 500:$0.3580
  • 250:$0.4200
  • 100:$0.4830
  • 50:$0.5310
  • 25:$0.5780
  • 10:$0.6260
  • 1:$0.7170
BSZ0909NS
DISTI # 726-BSZ0909NS		Infineon Technologies AGMOSFET N-Ch 30V 36A TDSON-8 OptiMOS
RoHS: Compliant		1425
  • 1:$0.5800
  • 10:$0.4850
  • 100:$0.3130
  • 1000:$0.2510
  • 5000:$0.2120
  • 10000:$0.2040
  • 25000:$0.1960
BSZ0909NSATMA1
DISTI # 2709925		Infineon Technologies AGMOSFET, N-CH, 34V, 36A, TSDSON
RoHS: Compliant		966
  • 1000:$0.4330
  • 500:$0.5410
  • 100:$0.7310
  • 10:$0.9470
  • 1:$1.0900
BSZ0909NSATMA1
DISTI # 2709925		Infineon Technologies AGMOSFET, N-CH, 34V, 36A, TSDSON1106
  • 500:£0.1630
  • 250:£0.1910
  • 100:£0.2180
  • 25:£0.2520
  • 5:£0.2840
Imagen Parte # Descripción
BSZ0909NDXTMA1

Mfr.#: BSZ0909NDXTMA1

OMO.#: OMO-BSZ0909NDXTMA1

 MOSFET DIFFERENTIATED MOSFETS
BSZ0909NS

Mfr.#: BSZ0909NS

OMO.#: OMO-BSZ0909NS

 MOSFET N-Ch 30V 36A TDSON-8 OptiMOS
BSZ0909ND

Mfr.#: BSZ0909ND

OMO.#: OMO-BSZ0909ND-1190

 DUAL N-CHANNEL OPTIMOS MOSFET (Alt: BSZ0909ND)
BSZ0909ND(SP001637282)

Mfr.#: BSZ0909ND(SP001637282)

OMO.#: OMO-BSZ0909ND-SP001637282--1190

 Nuevo y original
BSZ0909NDXTMA1

Mfr.#: BSZ0909NDXTMA1

OMO.#: OMO-BSZ0909NDXTMA1-INFINEON-TECHNOLOGIES

 MOSFET 2 N-CH 30V 20A WISON-8
BSZ0909NS

Mfr.#: BSZ0909NS

OMO.#: OMO-BSZ0909NS-1190

 Trans MOSFET N-CH 34V 9A 8-Pin TSDSON T/R (Alt: BSZ0909NS)
BSZ0909NS G

Mfr.#: BSZ0909NS G

OMO.#: OMO-BSZ0909NS-G-1190

 Nuevo y original
BSZ0909NSATMA1

Mfr.#: BSZ0909NSATMA1

OMO.#: OMO-BSZ0909NSATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 34V 9A 8TSDSON
BSZ0909NSG

Mfr.#: BSZ0909NSG

OMO.#: OMO-BSZ0909NSG-1190

 Nuevo y original
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Valores:
Available
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3000
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