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BSZ0909NDXTMA1

BSZ0909NDXTMA1
Mfr. #:
BSZ0909NDXTMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET DIFFERENTIATED MOSFETS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ0909NDXTMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BSZ0909NDXTMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Marca:
Infineon Technologies
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Parte # Alias:
BSZ0909ND SP001637282
Unidad de peso:
0.000811 oz
Tags
BSZ0909ND, BSZ0909, BSZ090, BSZ09, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
MOSFET 2 N-CH 30V 20A 0.018 OHM PG WISON-8
***ineon SCT
The used OptiMOS™ technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements, PG-WISON-8, RoHS
***ark
Mosfet, Dual N-Ch, 30V, 20A, Wison-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Powerrohs Compliant: Yes |Infineon BSZ0909NDXTMA1
***ineon
The used OptiMOS technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency. | Summary of Features: Ultra-low Q g; Symmetric half bridge in a small 3.0x3.0mm package outline; Exposed pads; Logic level (4.5V rated); RoHS compliant 6/6 (full lead free) | Benefits: Low switching losses; High switching frequency operation; Lowest parasitics; Low operating temperature; Low gate drive losses; RoHS 6/6 lead free product | Target Applications: Wireless power; Multicopter; Drives
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
Parte # Mfg. Descripción Valores Precio
BSZ0909NDXTMA1
DISTI # V72:2272_16665218		Infineon Technologies AGTrans MOSFET N-CH 30V 8.1A 8-Pin WISON EP T/R
RoHS: Compliant		1318
  • 1000:$0.4967
  • 500:$0.6347
  • 250:$0.6791
  • 100:$0.7546
  • 25:$0.8818
  • 10:$1.0776
  • 1:$1.2531
BSZ0909NDXTMA1
DISTI # V36:1790_16665218		Infineon Technologies AGTrans MOSFET N-CH 30V 8.1A 8-Pin WISON EP T/R
RoHS: Compliant		0
  • 5000000:$0.4104
  • 2500000:$0.4107
  • 500000:$0.4370
  • 50000:$0.4841
  • 5000:$0.4920
BSZ0909NDXTMA1
DISTI # BSZ0909NDXTMA1CT-ND		Infineon Technologies AGMOSFET 2 N-CH 30V 20A WISON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4700In Stock
  • 1000:$0.5715
  • 500:$0.7239
  • 100:$0.8763
  • 10:$1.1240
  • 1:$1.2600
BSZ0909NDXTMA1
DISTI # BSZ0909NDXTMA1DKR-ND		Infineon Technologies AGMOSFET 2 N-CH 30V 20A WISON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4700In Stock
  • 1000:$0.5715
  • 500:$0.7239
  • 100:$0.8763
  • 10:$1.1240
  • 1:$1.2600
BSZ0909NDXTMA1
DISTI # BSZ0909NDXTMA1TR-ND		Infineon Technologies AGMOSFET 2 N-CH 30V 20A WISON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.4735
  • 5000:$0.4920
BSZ0909NDXTMA1
DISTI # 26196720		Infineon Technologies AGTrans MOSFET N-CH 30V 8.1A 8-Pin WISON EP T/R
RoHS: Compliant		1318
  • 13:$1.2531
BSZ0909NDXTMA1
DISTI # SP001637282		Infineon Technologies AGDUAL N-CHANNEL OPTIMOS MOSFET (Alt: SP001637282)
RoHS: Compliant
Min Qty: 5000		Europe - 5000
  • 50000:€0.4099
  • 30000:€0.4419
  • 20000:€0.4789
  • 10000:€0.5219
  • 5000:€0.6379
BSZ0909NDXTMA1
DISTI # BSZ0909NDXTMA1		Infineon Technologies AGDUAL N-CHANNEL OPTIMOS MOSFET - Bulk (Alt: BSZ0909NDXTMA1)
RoHS: Compliant
Min Qty: 782
Container: Bulk		Americas - 0
  • 7820:$0.4059
  • 3910:$0.4129
  • 2346:$0.4279
  • 1564:$0.4439
  • 782:$0.4609
BSZ0909NDXTMA1
DISTI # BSZ0909NDXTMA1		Infineon Technologies AGDUAL N-CHANNEL OPTIMOS MOSFET - Tape and Reel (Alt: BSZ0909NDXTMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4469
  • 30000:$0.4549
  • 20000:$0.4709
  • 10000:$0.4889
  • 5000:$0.5069
BSZ0909NDXTMA1
DISTI # 726-BSZ0909NDXTMA1		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		4090
  • 1:$1.1500
  • 10:$0.9870
  • 100:$0.7580
  • 500:$0.6700
  • 1000:$0.5290
  • 5000:$0.4690
  • 10000:$0.4510
BSZ0909NDXTMA1Infineon Technologies AGPower Field-Effect Transistor, 4.1A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant		10000
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
BSZ0909NDXTMA1
DISTI # 2771840		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 20A, WISON-84685
  • 500:£0.4850
  • 250:£0.5170
  • 100:£0.5490
  • 10:£0.7150
  • 1:£0.8300
BSZ0909NDXTMA1
DISTI # XSKDRABV0017844		Infineon Technologies AG 
RoHS: Compliant		15000 in Stock0 on Order
  • 15000:$0.6053
  • 5000:$0.6486
BSZ0909NDXTMA1
DISTI # 2771840		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 20A, WISON-8
RoHS: Compliant		4685
  • 1000:$0.9140
  • 500:$1.1700
  • 100:$1.5000
  • 10:$1.9000
  • 1:$2.1400
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 Thick Film Resistors - SMD 2.2K OHM 1%
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de BSZ0909NDXTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,15 US$
1,15 US$
10
0,99 US$
9,87 US$
100
0,76 US$
75,80 US$
500
0,67 US$
335,00 US$
1000
0,53 US$
529,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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