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CMLDM3757 TR

CMLDM3757 TR
Mfr. #:
CMLDM3757 TR
Fabricante:
Central Semiconductor
Descripción:
Darlington Transistors MOSFET N&P Chan Comp Mosfet's
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CMLDM3757 TR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CMLDM3757 TR más información
Atributo del producto
Valor de atributo
Fabricante
Central Semiconductor Corp
categoria de producto
FET: matrices
Serie
CMLDM3
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.000289 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-563, SOT-666
Tecnología
Si
Temperatura de funcionamiento
-65°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
SOT-563
Configuración
Canal N Canal P
Tipo FET
Canal N y P
Potencia máxima
350mW
Tipo transistor
1 N-Channel 1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
150pF @ 16V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
540mA, 430mA
Rds-On-Max-Id-Vgs
550 mOhm @ 540mA, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
1.58nC @ 4.5V
Disipación de potencia Pd
350 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 65 C
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
540 mA
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V
Resistencia a la fuente de desagüe de Rds
750 mOhms
Polaridad del transistor
Canal N Canal P
Tiempo de retardo de apagado típico
25 ns 48 ns
Tiempo de retardo de encendido típico
10 ns 38 ns
Qg-Gate-Charge
1.58 nC 1.2 nC
Modo de canal
Mejora
Tags
CMLDM3, CMLDM, CMLD, CML
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
N-Channel and P-Channel Enhancement Mode Complementary MOSFET 20V 430mA 6-Pin SOT-563 T/R
***ure Electronics
CMLD Series 20V 2 Ohm DualN-Ch & P-Ch Enhancement-Mode Complementary Mosfet
***i-Key
MOSFET N/P-CH 20V SOT563
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Parte # Mfg. Descripción Valores Precio
CMLDM3757 TR
DISTI # CMLDM3757CT-ND		Central Semiconductor CorpMOSFET N/P-CH 20V SOT563
Min Qty: 1
Container: Cut Tape (CT)		12434In Stock
  • 1000:$0.2101
  • 500:$0.2719
  • 100:$0.3461
  • 10:$0.4640
  • 1:$0.5400
CMLDM3757 TR
DISTI # CMLDM3757DKR-ND		Central Semiconductor CorpMOSFET N/P-CH 20V SOT563
Min Qty: 1
Container: Digi-Reel®		12434In Stock
  • 1000:$0.2101
  • 500:$0.2719
  • 100:$0.3461
  • 10:$0.4640
  • 1:$0.5400
CMLDM3757 TR
DISTI # CMLDM3757TR-ND		Central Semiconductor CorpMOSFET N/P-CH 20V SOT563
Min Qty: 3000
Container: Tape & Reel (TR)		12000In Stock
  • 30000:$0.1596
  • 15000:$0.1620
  • 6000:$0.1740
  • 3000:$0.1860
CMLDM3757 TR
DISTI # CMLDM3757 TR		Central Semiconductor CorpN-Channel and P-Channel Enhancement Mode Complementary MOSFET 20V 430mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: CMLDM3757 TR)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1369
  • 18000:$0.1399
  • 12000:$0.1469
  • 6000:$0.1549
  • 3000:$0.1569
CMLDM3757 TR
DISTI # 610-CMLDM3757		Central Semiconductor CorpMOSFET N&P Chan Comp Mosfet's
RoHS: Compliant		5070
  • 1:$0.5100
  • 10:$0.4340
  • 100:$0.2730
  • 1000:$0.2050
  • 3000:$0.1740
  • 9000:$0.1630
  • 24000:$0.1540
  • 45000:$0.1500
Imagen Parte # Descripción
CMLDM3757 TR

Mfr.#: CMLDM3757 TR

OMO.#: OMO-CMLDM3757-TR

 MOSFET N&P Chan Comp Mosfet's
CMLDM3737 TR

Mfr.#: CMLDM3737 TR

OMO.#: OMO-CMLDM3737-TR

 MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
CMLDM3737

Mfr.#: CMLDM3737

OMO.#: OMO-CMLDM3737-1190

 Nuevo y original
CMLDM3737 TR

Mfr.#: CMLDM3737 TR

OMO.#: OMO-CMLDM3737-TR-CENTRAL-SEMICONDUCTOR

 MOSFET 2N-CH 20V 0.54A SOT563
CMLDM3757

Mfr.#: CMLDM3757

OMO.#: OMO-CMLDM3757-1190

 Nuevo y original
CMLDM3757 TR

Mfr.#: CMLDM3757 TR

OMO.#: OMO-CMLDM3757-TR-CENTRAL-SEMICONDUCTOR

 Darlington Transistors MOSFET N&P Chan Comp Mosfet's
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de CMLDM3757 TR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,21 US$
0,21 US$
10
0,20 US$
1,95 US$
100
0,18 US$
18,48 US$
500
0,17 US$
87,25 US$
1000
0,16 US$
164,30 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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