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BSC040N08NS5ATMA1

BSC040N08NS5ATMA1
Mfr. #:
BSC040N08NS5ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 80V 100A 8TDSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC040N08NS5ATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
BSC040N08NS5ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineo
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
BSC040N08NS5 SP001132452
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
104 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6 ns
Hora de levantarse
8 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
5.7 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
25 ns
Tiempo de retardo de encendido típico
14 ns
Qg-Gate-Charge
43 nC
Transconductancia directa-Mín.
45 S
Modo de canal
Mejora
Tags
BSC040N0, BSC040, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 4 mOhm 54 nC OptiMOS™ Power Mosfet - PG-TDSON-8
***ical
Trans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R
***ark
Mosfet, N-Ch, 80V, 100A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSC040N08NS5ATMA1
DISTI # BSC040N08NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9295
BSC040N08NS5ATMA1
DISTI # BSC040N08NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0678
  • 500:$1.2888
  • 100:$1.6570
  • 10:$2.0620
  • 1:$2.2800
BSC040N08NS5ATMA1
DISTI # BSC040N08NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0678
  • 500:$1.2888
  • 100:$1.6570
  • 10:$2.0620
  • 1:$2.2800
BSC040N08NS5ATMA1
DISTI # BSC040N08NS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC040N08NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7489
  • 10000:$0.7219
  • 20000:$0.6959
  • 30000:$0.6719
  • 50000:$0.6599
BSC040N08NS5ATMA1
DISTI # SP001132452		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: SP001132452)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.9809
  • 10000:€0.8029
  • 20000:€0.7359
  • 30000:€0.6789
  • 50000:€0.6309
BSC040N08NS5ATMA1
DISTI # 12AC9443		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes5333
  • 1:$1.9200
  • 10:$1.6300
  • 25:$1.5200
  • 50:$1.4100
  • 100:$1.3000
  • 250:$1.2200
  • 500:$1.1400
  • 1000:$0.9430
BSC040N08NS5ATMA1
DISTI # 726-BSC040N08NS5ATMA		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8
RoHS: Compliant		0
  • 1:$1.9200
  • 10:$1.6300
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9430
  • 2500:$0.8780
  • 5000:$0.8460
BSC040N08NS5ATMA1
DISTI # 2709860		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
RoHS: Compliant		5333
  • 5:£1.5700
  • 25:£1.4200
  • 100:£1.2600
BSC040N08NS5ATMA1
DISTI # 2709860		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
RoHS: Compliant		5333
  • 1:$3.6400
  • 10:$3.2900
  • 100:$2.6500
Imagen Parte # Descripción
BSC040N08NS5ATMA1

Mfr.#: BSC040N08NS5ATMA1

OMO.#: OMO-BSC040N08NS5ATMA1

 MOSFET N-Ch 80V 100A TDSON-8
BSC040N08NS5

Mfr.#: BSC040N08NS5

OMO.#: OMO-BSC040N08NS5-1190

 Nuevo y original
BSC040N08NS5 , TDA7449 ,

Mfr.#: BSC040N08NS5 , TDA7449 ,

OMO.#: OMO-BSC040N08NS5-TDA7449--1190

 Nuevo y original
BSC040N08NS5ATMA1

Mfr.#: BSC040N08NS5ATMA1

OMO.#: OMO-BSC040N08NS5ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V 100A 8TDSON
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de BSC040N08NS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,99 US$
0,99 US$
10
0,94 US$
9,40 US$
100
0,89 US$
89,09 US$
500
0,84 US$
420,70 US$
1000
0,79 US$
791,90 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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