 |  | | |
| PartNumber | BSC040N08NS5ATMA1 | BSC040N08NS5 | BSC040N08NS5 , TDA7449 , |
| Description | MOSFET N-Ch 80V 100A TDSON-8 | ||
| Manufacturer | Infineon | Infineo | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 43 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 104 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 45 S | - | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | BSC040N08NS5 SP001132452 | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Part Aliases | - | BSC040N08NS5 SP001132452 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 104 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
| Rds On Drain Source Resistance | - | 5.7 mOhms | - |
| Qg Gate Charge | - | 43 nC | - |
| Forward Transconductance Min | - | 45 S | - |