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RS1E130GNTB

RS1E130GNTB
Mfr. #:
RS1E130GNTB
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET 4.5V Drive Nch MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RS1E130GNTB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RS1E130GNTB más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSOP-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
13 A
Rds On - Resistencia de la fuente de drenaje:
11.7 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
7.9 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3 W
Configuración:
Único
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
8 S
Otoño:
3.1 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.3 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
22.4 ns
Tiempo típico de retardo de encendido:
8.4 ns
Parte # Alias:
RS1E130GN
Unidad de peso:
0.002490 oz
Tags
RS1E130G, RS1E13, RS1E1, RS1E, RS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 30V 13A Automotive 8-Pin HSOP EP T/R
***et
4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE
***
4.5V N-CHANNEL
***(Formerly Allied Electronics)
IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC
***roFlash
Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET® Power Mosfet - SOIC-8
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P
***ure Electronics
Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 14A; 8.5 MOHM; 8.3 NC QG; SO-8; Pb-Free
***ical
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0069Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ure Electronics
N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel
***emi
N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ
***nell
MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;
***rchild Semiconductor
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
***emi
Single N-Channel Power MOSFET 30V, 40A, 9.4mΩ
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V Rohs Compliant: Yes
***nell
MOSFET, AEC-Q101, N-CH, 30V, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 26W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
N-Channel Power Trench® MOSFET 30V, 13.3A, 8.5mΩ
***ure Electronics
Single N-Channel 30 V 2.3 W 29 nC PowerTrench Surface Mount Mosfet - MLP-3.3x3.3
***nell
MOSFET, N CH, 30V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Medium Power MOSFETs
ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.
Parte # Mfg. Descripción Valores Precio
RS1E130GNTB
DISTI # C1S625901169847		ROHM SemiconductorTrans MOSFET N-CH 30V 13A Automotive 8-Pin HSOP EP T/R
RoHS: Compliant		40
  • 10:$0.1820
RS1E130GNTB
DISTI # RS1E130GNTBCT-ND		ROHM SemiconductorMOSFET N-CH 30V 13A 8-HSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2290In Stock
  • 1000:$0.2084
  • 500:$0.2697
  • 100:$0.3432
  • 10:$0.4600
  • 1:$0.5400
RS1E130GNTB
DISTI # RS1E130GNTBDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 13A 8-HSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2290In Stock
  • 1000:$0.2084
  • 500:$0.2697
  • 100:$0.3432
  • 10:$0.4600
  • 1:$0.5400
RS1E130GNTB
DISTI # RS1E130GNTBTR-ND		ROHM SemiconductorMOSFET N-CH 30V 13A 8-HSOP
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.1583
  • 12500:$0.1606
  • 5000:$0.1726
  • 2500:$0.1845
RS1E130GNTB
DISTI # RS1E130GNTB		ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E130GNTB)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
    RS1E130GNTB
    DISTI # 755-RS1E130GNTB    		ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant    		1960
    • 1:$0.5100
    • 10:$0.4300
    • 100:$0.2620
    • 1000:$0.2030
    • 2500:$0.1730
    • 10000:$0.1610
    • 25000:$0.1530
    • 50000:$0.1490
    RS1E130GNTBROHM Semiconductor 33
    • 21:$0.7500
    • 5:$1.0000
    • 1:$1.2500
    RS1E130GNTBROHM Semiconductor 100
    • 1:¥5.3321
    • 100:¥3.0233
    • 1250:¥1.9168
    • 2500:¥1.4280
    RS1E130GNTBROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant    		Americas -
      RS1E130GNTBROHM SemiconductorRoHS(ship within 1day)42
      • 1:$0.9900
      • 10:$0.5800
      • 50:$0.3600
      • 100:$0.3100
      • 500:$0.2600
      • 1000:$0.2500
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      RD3T050CNTL1

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      Mfr.#: RD3L050SNTL1

      OMO.#: OMO-RD3L050SNTL1-ROHM-SEMI

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      RD3P100SNTL1

      Mfr.#: RD3P100SNTL1

      OMO.#: OMO-RD3P100SNTL1-ROHM-SEMI

      		 NCH 100V 10A POWER MOSFET
      RD3T050CNTL1

      Mfr.#: RD3T050CNTL1

      OMO.#: OMO-RD3T050CNTL1-ROHM-SEMI

      		 NCH 200V 5A POWER MOSFET
      MAXM22511GLH+

      Mfr.#: MAXM22511GLH+

      OMO.#: OMO-MAXM22511GLH--MAXIM-INTEGRATED

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      CC0402KRX7R7BB104

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      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de RS1E130GNTB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,51 US$
      0,51 US$
      10
      0,43 US$
      4,30 US$
      100
      0,26 US$
      26,20 US$
      1000
      0,20 US$
      203,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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