C2M0025120D

C2M0025120D
Mfr. #:
C2M0025120D
Fabricante:
N/A
Descripción:
MOSFET N-CH 1200V 90A TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
C2M0025120D Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
C2M0025120D más información
Atributo del producto
Valor de atributo
Fabricante
Cree
categoria de producto
FET - Single
Serie
Z-FET
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tecnología
Sic
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
A través del orificio
Número de canales
1 Channel
Paquete de dispositivo de proveedor
TO-247-3
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
463W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
1200V (1.2kV)
Entrada-Capacitancia-Ciss-Vds
2788pF @ 1000V
Función FET
Carburo de silicio (SiC)
Corriente-Continuo-Drenaje-Id-25 ° C
90A (Tc)
Rds-On-Max-Id-Vgs
34 mOhm @ 50A, 20V
Vgs-th-Max-Id
2.4V @ 10mA
Puerta-Carga-Qg-Vgs
161nC @ 20V
Disipación de potencia Pd
463 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
28.4 ns
Hora de levantarse
31.6 ns
Vgs-Puerta-Fuente-Voltaje
- 10 V + 25 V
Id-corriente-de-drenaje-continua
90 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Vgs-th-Gate-Source-Threshold-Voltage
2.4 V
Resistencia a la fuente de desagüe de Rds
25 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
28.8 ns
Tiempo de retardo de encendido típico
14.4 ns
Qg-Gate-Charge
406 nC
Transconductancia directa-Mín.
23.6 S
Modo de canal
Mejora
Tags
C2M00, C2M0, C2M
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D
***ark
MOSFET TRANSISTOR, N CHANNEL, 90 A, 1.2 KV, 0.025 OHM, 20 V, 2.4 V ROHS COMPLIANT: YES
***ical
Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247
***ment14 APAC
场效应管, MOSFET, N沟道, 1.2KV, 90A, TO-247;
***i-Key
MOSFET N-CH 1200V 90A TO-247
***hardson RFPD
SILICON CARBIDE MOSFETS
***nell
MOSFET, CANALE N, 1.2KV, 90A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:90A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.025ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:463W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-
Wolfspeed C2M™ SiC Power MOSFETs
Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more
Parte # Mfg. Descripción Valores Precio
C2M0025120D
DISTI # 29423888
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247
RoHS: Compliant
4162
  • 2:$92.7000
C2M0025120D
DISTI # C2M0025120D-ND
WolfspeedMOSFET N-CH 1200V 90A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
558In Stock
  • 1:$73.2900
C2M0025120D
DISTI # 54X4873
WolfspeedMOSFET Transistor, N Channel, 90 A, 1.2 kV, 0.025 ohm, 20 V, 2.4 V RoHS Compliant: Yes15
  • 1:$69.8000
C2M0025120D
DISTI # 941-C2M0025120D
Cree, Inc.MOSFET SIC MOSFET 1200V RDS ON 25 mOhm
RoHS: Compliant
2
  • 1:$69.8000
  • 100:$67.1200
C2M0025120D
DISTI # 9158818
Cree, Inc.N-CHAN SIC MOSFET 1200V 90A TO247, EA103
  • 1:£55.4400
  • 5:£53.2000
  • 10:£51.8800
C2M0025120D
DISTI # 9158818P
Cree, Inc.N-CHAN SIC MOSFET 1200V 90A TO247, TU135
  • 5:£53.2000
  • 10:£51.8800
C2M0025120DChip 1 Exchange 139
    C2M0025120D
    DISTI # 2422213
    WolfspeedMOSFET, N CHANNEL, 1.2KV, 90A, TO-247
    RoHS: Compliant
    300
    • 50:£53.9600
    • 10:£53.9700
    • 5:£54.8000
    • 1:£55.9200
    C2M0025120D
    DISTI # 2422213
    WolfspeedMOSFET, N CHANNEL, 1.2KV, 90A, TO-247
    RoHS: Compliant
    300
    • 1:$115.0600
    Imagen Parte # Descripción
    C2M0040120D

    Mfr.#: C2M0040120D

    OMO.#: OMO-C2M0040120D

    MOSFET SiC Power MOSFET 1200V, 60A
    C2M0025120D

    Mfr.#: C2M0025120D

    OMO.#: OMO-C2M0025120D

    MOSFET SIC MOSFET 1200V RDS ON 25 mOhm
    C2M0025120

    Mfr.#: C2M0025120

    OMO.#: OMO-C2M0025120-1190

    Nuevo y original
    C2M0025120D

    Mfr.#: C2M0025120D

    OMO.#: OMO-C2M0025120D-WOLFSPEED

    MOSFET N-CH 1200V 90A TO-247
    C2M0040120

    Mfr.#: C2M0040120

    OMO.#: OMO-C2M0040120-1190

    Nuevo y original
    C2M0040120D

    Mfr.#: C2M0040120D

    OMO.#: OMO-C2M0040120D-WOLFSPEED

    MOSFET N-CH 1200V 60A TO-247
    C2M0040120D/SL36N120A

    Mfr.#: C2M0040120D/SL36N120A

    OMO.#: OMO-C2M0040120D-SL36N120A-1190

    Nuevo y original
    C2M0080120D

    Mfr.#: C2M0080120D

    OMO.#: OMO-C2M0080120D-WOLFSPEED

    MOSFET N-CH 1200V 31.6A TO247
    C2M0080120DCREE

    Mfr.#: C2M0080120DCREE

    OMO.#: OMO-C2M0080120DCREE-1190

    Nuevo y original
    C2M0080170P

    Mfr.#: C2M0080170P

    OMO.#: OMO-C2M0080170P-WOLFSPEED

    ZFET SIC DMOSFET, 1700V VDS, RDS
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de C2M0025120D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    100,68 US$
    100,68 US$
    10
    95,65 US$
    956,46 US$
    100
    90,61 US$
    9 061,20 US$
    500
    85,58 US$
    42 789,00 US$
    1000
    80,54 US$
    80 544,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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