C2M0025120D

C2M0025120D
Mfr. #:
C2M0025120D
Fabricante:
N/A
Descripción:
MOSFET SIC MOSFET 1200V RDS ON 25 mOhm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
C2M0025120D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
C2M0025120D más información
Atributo del producto
Valor de atributo
Fabricante:
Cree, Inc.
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Id - Corriente de drenaje continua:
90 A
Rds On - Resistencia de la fuente de drenaje:
25 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.4 V
Vgs - Voltaje puerta-fuente:
25 V, - 10 V
Qg - Carga de puerta:
406 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
463 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
5.21 mm
Producto:
MOSFET de potencia
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET de potencia de carburo de silicio
Ancho:
16.13 mm
Marca:
Velocidad de lobo / Cree
Transconductancia directa - Mín .:
23.6 S
Otoño:
28.4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
31.6 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
28.8 ns
Tiempo típico de retardo de encendido:
14.4 ns
Unidad de peso:
1.340411 oz
Tags
C2M00, C2M0, C2M
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D
***ark
MOSFET TRANSISTOR, N CHANNEL, 90 A, 1.2 KV, 0.025 OHM, 20 V, 2.4 V ROHS COMPLIANT: YES
***ical
Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247
***ment14 APAC
场效应管, MOSFET, N沟道, 1.2KV, 90A, TO-247;
***i-Key
MOSFET N-CH 1200V 90A TO-247
***hardson RFPD
SILICON CARBIDE MOSFETS
***nell
MOSFET, CANALE N, 1.2KV, 90A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:90A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.025ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:463W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-
Wolfspeed C2M™ SiC Power MOSFETs
Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more
Parte # Mfg. Descripción Valores Precio
C2M0025120D
DISTI # 29423888
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247
RoHS: Compliant
4162
  • 2:$92.7000
C2M0025120D
DISTI # C2M0025120D-ND
WolfspeedMOSFET N-CH 1200V 90A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
558In Stock
  • 1:$73.2900
C2M0025120D
DISTI # 54X4873
WolfspeedMOSFET Transistor, N Channel, 90 A, 1.2 kV, 0.025 ohm, 20 V, 2.4 V RoHS Compliant: Yes15
  • 1:$69.8000
C2M0025120D
DISTI # 941-C2M0025120D
Cree, Inc.MOSFET SIC MOSFET 1200V RDS ON 25 mOhm
RoHS: Compliant
2
  • 1:$69.8000
  • 100:$67.1200
C2M0025120D
DISTI # 9158818
Cree, Inc.N-CHAN SIC MOSFET 1200V 90A TO247, EA103
  • 1:£55.4400
  • 5:£53.2000
  • 10:£51.8800
C2M0025120D
DISTI # 9158818P
Cree, Inc.N-CHAN SIC MOSFET 1200V 90A TO247, TU135
  • 5:£53.2000
  • 10:£51.8800
C2M0025120DChip 1 Exchange 139
    C2M0025120D
    DISTI # 2422213
    WolfspeedMOSFET, N CHANNEL, 1.2KV, 90A, TO-247
    RoHS: Compliant
    300
    • 50:£53.9600
    • 10:£53.9700
    • 5:£54.8000
    • 1:£55.9200
    C2M0025120D
    DISTI # 2422213
    WolfspeedMOSFET, N CHANNEL, 1.2KV, 90A, TO-247
    RoHS: Compliant
    300
    • 1:$115.0600
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    MOSFET NCH 1.7KV 72A TO247
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de C2M0025120D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    69,80 US$
    69,80 US$
    100
    67,12 US$
    6 712,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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