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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSP295E6327T DISTI # BSP295XTINTR-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP295E6327T DISTI # BSP295XTINCT-ND | Infineon Technologies AG | MOSFET N-CH 60V 1.8A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSP295 H6327 OMO.#: OMO-BSP295-H6327 |
MOSFET N-Ch 60V 1.8A SOT-223-3 |
|
|
Mfr.#: BSP295H6327XTSA1 OMO.#: OMO-BSP295H6327XTSA1 |
MOSFET N-Ch 60V 1.8A SOT-223-3 |
|
Mfr.#: BSP295 OMO.#: OMO-BSP295-1190 |
MOSFET, N CHANNEL, 60V, 1.8A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:1.8A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.22ohm, Rds(on) Test Voltage Vgs:10V, |
|
|
Mfr.#: BSP295 L6327 OMO.#: OMO-BSP295-L6327-1190 |
Nuevo y original |
|
|
Mfr.#: BSP295 E6327 OMO.#: OMO-BSP295-E6327-1190 |
Nuevo y original |
|
Mfr.#: BSP295E6327 |
MOSFET N-CH 60V 1.8A SOT223 |
|
|
Mfr.#: BSP295L6327 OMO.#: OMO-BSP295L6327-1190 |
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP295L6327HTSA1 |
MOSFET N-CH 60V 1.8A SOT-223 |
|
|
Mfr.#: BSP295E6327T |
MOSFET N-CH 60V 1.8A SOT223 |
|
|
Mfr.#: BSP295H6327XTSA1 |
MOSFET N-CH 60V 1.8A SOT223 |
