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IPD60R170CFD7ATMA1

IPD60R170CFD7ATMA1
Mfr. #:
IPD60R170CFD7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R170CFD7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPD60R170CFD7ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
14 A
Rds On - Resistencia de la fuente de drenaje:
144 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
28 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
76 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Serie:
CoolMOS CFD7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
68 ns
Tiempo típico de retardo de encendido:
31 ns
Parte # Alias:
IPD60R170CFD7 SP001617934
Tags
IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 76W 600V PG-TO 252-3
***ark
Mosfet, N-Ch, 600V, 14A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPD60R170CFD7ATMA1
DISTI # 32894270		Infineon Technologies AGHIGH POWER_NEW2500
  • 2500:$1.1483
IPD60R170CFD7ATMA1
DISTI # IPD60R170CFD7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 51A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2486In Stock
  • 1000:$1.4377
  • 500:$1.7352
  • 100:$2.1119
  • 10:$2.6280
  • 1:$2.9200
IPD60R170CFD7ATMA1
DISTI # IPD60R170CFD7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 51A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2486In Stock
  • 1000:$1.4377
  • 500:$1.7352
  • 100:$2.1119
  • 10:$2.6280
  • 1:$2.9200
IPD60R170CFD7ATMA1
DISTI # IPD60R170CFD7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.2514
  • 2500:$1.2996
IPD60R170CFD7ATMA1
DISTI # V36:1790_18787588		Infineon Technologies AGHIGH POWER_NEW0
  • 2500000:$1.0680
  • 1250000:$1.0690
  • 250000:$1.1530
  • 25000:$1.2800
  • 2500:$1.3000
IPD60R170CFD7ATMA1
DISTI # V72:2272_18787588		Infineon Technologies AGHIGH POWER_NEW0
    IPD60R170CFD7ATMA1
    DISTI # IPD60R170CFD7ATMA1    		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 76W 600V PG-TO 252-3 - Tape and Reel (Alt: IPD60R170CFD7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 15000:$1.0900
    • 25000:$1.0900
    • 5000:$1.1900
    • 10000:$1.1900
    • 2500:$1.2900
    IPD60R170CFD7ATMA1
    DISTI # SP001617934    		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 76W 600V PG-TO 252-3 (Alt: SP001617934)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 0
    • 25000:€1.0169
    • 15000:€1.0899
    • 10000:€1.1739
    • 5000:€1.2719
    • 2500:€1.5259
    IPD60R170CFD7ATMA1
    DISTI # 43AC9322    		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
    • 1000:$1.3400
    • 500:$1.6200
    • 250:$1.7300
    • 100:$1.8500
    • 50:$2.0000
    • 25:$2.1600
    • 10:$2.3100
    • 1:$2.7200
    IPD60R170CFD7ATMA1
    DISTI # 726-IPD60R170CFD7ATM    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		2830
    • 1:$2.6900
    • 10:$2.2900
    • 100:$1.8300
    • 500:$1.6000
    • 1000:$1.3300
    IPD60R170CFD7ATMA1
    DISTI # 2807986    		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-2522214
    • 500:£1.1700
    • 250:£1.2600
    • 100:£1.3400
    • 10:£1.6800
    • 1:£2.2100
    IPD60R170CFD7ATMA1
    DISTI # 2807986    		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-252
    RoHS: Compliant    		2474
    • 1000:$1.8400
    • 500:$1.8800
    • 250:$1.9800
    • 100:$2.0900
    • 10:$2.3600
    • 1:$2.5300
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    Disponibilidad
    Valores:
    Available
    En orden:
    1986
    Ingrese la cantidad:
    El precio actual de IPD60R170CFD7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,69 US$
    2,69 US$
    10
    2,29 US$
    22,90 US$
    100
    1,83 US$
    183,00 US$
    500
    1,60 US$
    800,00 US$
    1000
    1,33 US$
    1 330,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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