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UJ3C120150K3S

UJ3C120150K3S
Mfr. #:
UJ3C120150K3S
Fabricante:
UnitedSiC
Descripción:
MOSFET 1200V/ 150mOhm SIC CASCODE, G3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
UJ3C120150K3S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
UJ3C120150K3S más información
Atributo del producto
Valor de atributo
Fabricante:
UnidosSiC
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Id - Corriente de drenaje continua:
18.4 A
Rds On - Resistencia de la fuente de drenaje:
180 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
30 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
166.7 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Tubo
Serie:
UJ3C
Tipo de transistor:
1 N-Channel
Marca:
UnidosSiC
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
36 ns
Tiempo típico de retardo de encendido:
21 ns
Tags
UJ3C1, UJ3C, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
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Disponibilidad
Valores:
30
En orden:
2013
Ingrese la cantidad:
El precio actual de UJ3C120150K3S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
14,69 US$
14,69 US$
10
14,00 US$
140,00 US$
25
12,95 US$
323,75 US$
50
12,25 US$
612,50 US$
100
11,90 US$
1 190,00 US$
250
10,85 US$
2 712,50 US$
500
10,15 US$
5 075,00 US$
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