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NTGD4167CT1G

NTGD4167CT1G
Mfr. #:
NTGD4167CT1G
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors MOSFET COMP 30V 2.9A 0.090 TSOP6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTGD4167CT1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
ON
categoria de producto
FET: matrices
Serie
NTGD4167C
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.000705 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-23-6 Thin, TSOT-23-6
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
6-TSOP
Configuración
Canal N Canal P
Tipo FET
Canal N y P
Potencia máxima
900mW
Tipo transistor
1 N-Channel 1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
295pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
2.6A, 1.9A
Rds-On-Max-Id-Vgs
90 mOhm @ 2.6A, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Puerta-Carga-Qg-Vgs
5.5nC @ 4.5V
Disipación de potencia Pd
1.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
4 ns 8 ns
Hora de levantarse
4 ns 8 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
2.2 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
90 mOhms 170 mOhms
Polaridad del transistor
Canal N Canal P
Tiempo de retardo de apagado típico
14 ns 22 ns
Tiempo de retardo de encendido típico
7 ns 8 ns
Modo de canal
Mejora
Tags
NTGD4167CT1, NTGD4167CT, NTGD4167C, NTGD4167, NTGD4, NTGD, NTG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
NTGD4167CT1G N/P-channel MOSFET Transistor; 2.2 A; 2.9 A; 30 V; 6-Pin TSOP
***th Star Micro
NTGD4167C: Small Signal MOSFET 30V 2.6A 90 mOhm Dual Complementary TSOP-6
***ure Electronics
Dual Channel N & P 30 V 90 mOhm 900 mW Surface Mount Power Mosfet - TSOP-6
***et Europe
Trans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R
***Semiconductor
Complementary Power MOSFET 30V, 2.6A, 90mΩ
*** Source Electronics
MOSFET N/P-CH 30V 6-TSOP
***ark
COMP TSOP6 30V 2.9A 0.090
***Components
ON Semiconductor, NTGD4167CT1G
***ment14 APAC
Prices include import duty and tax. MOSFET, N AND P CH, 30V, 2.6A, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:900mW; Transistor Case Style:TSOP; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN-P E N, 30V, 2.6A, TSOP-6; Polarità Transistor:Canale N e P; Corrente Continua di Drain Id:2.6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.052ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:900mV; Dissipazione di Potenza Pd:900mW; Modello Case Transistor:TSOP; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
NTGD4167CT1G
DISTI # NTGD4167CT1GOSTR-ND		ON SemiconductorMOSFET N/P-CH 30V 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1598
NTGD4167CT1G
DISTI # NTGD4167CT1GOSCT-ND		ON SemiconductorMOSFET N/P-CH 30V 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1805
  • 500:$0.2336
  • 100:$0.3185
  • 10:$0.4250
  • 1:$0.5000
NTGD4167CT1G
DISTI # NTGD4167CT1GOSDKR-ND		ON SemiconductorMOSFET N/P-CH 30V 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1805
  • 500:$0.2336
  • 100:$0.3185
  • 10:$0.4250
  • 1:$0.5000
NTGD4167CT1G
DISTI # NTGD4167CT1G		ON SemiconductorTrans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R (Alt: NTGD4167CT1G)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    NTGD4167CT1G
    DISTI # NTGD4167CT1G    		ON SemiconductorTrans MOSFET N/P-CH 30V 2.2A 6-Pin TSOP T/R - Tape and Reel (Alt: NTGD4167CT1G)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1109
    • 6000:$0.1109
    • 12000:$0.1089
    • 18000:$0.1079
    • 30000:$0.1049
    NTGD4167CT1G
    DISTI # 81Y7039    		ON SemiconductorMOSFET, N AND P CH, 30V, 2.6A, TSOP-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):52mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:900mV,, RoHS Compliant: Yes0
    • 1:$0.4100
    • 10:$0.3390
    • 25:$0.2950
    • 50:$0.2510
    • 100:$0.2070
    • 250:$0.1910
    • 500:$0.1760
    • 1000:$0.1600
    NTGD4167CT1G
    DISTI # 95M6993    		ON SemiconductorDUAL N/P CHANNEL MOSFET, 30V, TSOP,Continuous Drain Current Id:2.6A,Continuous Drain Current Id, N Channel:2.6A,Continuous Drain Current Id, P Channel:-1.9A,Drain Source Voltage Vds:30V,Drain Source Voltage Vds, N Channel:30V , RoHS Compliant: Yes0
    • 1:$0.6090
    • 50:$0.4030
    • 100:$0.2250
    • 250:$0.2190
    • 500:$0.2120
    • 1000:$0.1460
    • 6000:$0.1360
    • 18000:$0.1330
    NTGD4167CT1G
    DISTI # 70341324    		ON SemiconductorNTGD4167CT1G N/P-channel MOSFET Transistor,2.2 A,2.9 A,30 V,6-Pin TSOP
    RoHS: Compliant    		0
    • 50:$0.3600
    • 125:$0.3560
    • 250:$0.3530
    • 500:$0.3490
    NTGD4167CT1G
    DISTI # 863-NTGD4167CT1G    		ON SemiconductorMOSFET COMP 30V 2.9A 0.090 TSOP6
    RoHS: Compliant    		0
    • 1:$0.4100
    • 10:$0.3390
    • 100:$0.2070
    • 1000:$0.1600
    • 3000:$0.1360
    • 9000:$0.1270
    NTGD4167CT1G
    DISTI # 2533185    		ON SemiconductorMOSFET, N AND P CH, 30V, 2.6A, TSOP-6
    RoHS: Compliant    		0
    • 5:£0.2940
    • 25:£0.2810
    • 100:£0.1590
    • 250:£0.1410
    • 500:£0.1220
    NTGD4167CT1G
    DISTI # 2533185    		ON SemiconductorMOSFET, N AND P CH, 30V, 2.6A, TSOP-6
    RoHS: Compliant    		0
    • 1:$0.6490
    • 10:$0.5370
    • 100:$0.3280
    • 1000:$0.2540
    • 3000:$0.2160
    • 9000:$0.2010
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    NTGD4167CT1

    Mfr.#: NTGD4167CT1

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    		 Nuevo y original
    NTGD4167CT1G SI3590DV-

    Mfr.#: NTGD4167CT1G SI3590DV-

    OMO.#: OMO-NTGD4167CT1G-SI3590DV--1190

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    NTGD4167CTTGR

    Mfr.#: NTGD4167CTTGR

    OMO.#: OMO-NTGD4167CTTGR-1190

    		 Nuevo y original
    NTGD4167PT1G

    Mfr.#: NTGD4167PT1G

    OMO.#: OMO-NTGD4167PT1G-1190

    		 Nuevo y original
    NTGD4167CT1G

    Mfr.#: NTGD4167CT1G

    OMO.#: OMO-NTGD4167CT1G-ON-SEMICONDUCTOR

    		 IGBT Transistors MOSFET COMP 30V 2.9A 0.090 TSOP6
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de NTGD4167CT1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,15 US$
    0,15 US$
    10
    0,14 US$
    1,42 US$
    100
    0,13 US$
    13,49 US$
    500
    0,13 US$
    63,70 US$
    1000
    0,12 US$
    119,90 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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