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IPW65R125C7XKSA1

IPW65R125C7XKSA1
Mfr. #:
IPW65R125C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 650V TO247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW65R125C7XKSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPW65R125C7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Tubo
Alias ​​de parte
IPW65R125C7 SP001080138
Nombre comercial
CoolMOS
Paquete-Estuche
TO-247-3
Tecnología
Si
Tags
IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans MOSFET N-CH 700V 18A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 650V TO247
***ronik
N-CH 650V 18A 125mOhm TO247-3
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPW65R125C7XKSA1
DISTI # V99:2348_06378120		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		230
  • 500:$2.7770
  • 250:$3.1220
  • 100:$3.3290
  • 10:$3.8700
  • 1:$4.5870
IPW65R125C7XKSA1
DISTI # V36:1790_06378120		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IPW65R125C7XKSA1
    DISTI # IPW65R125C7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 650V TO247
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Temporarily Out of Stock
    • 240:$3.9424
    IPW65R125C7XKSA1
    DISTI # 26706096    		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		230
    • 500:$2.9853
    • 250:$3.3561
    • 100:$3.5787
    • 10:$4.1602
    • 3:$4.9310
    IPW65R125C7XKSA1
    DISTI # IPW65R125C7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R125C7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$2.4900
    • 480:$2.3900
    • 960:$2.2900
    • 1440:$2.1900
    • 2400:$2.1900
    IPW65R125C7XKSA1
    DISTI # SP001080138    		Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-247 Tube (Alt: SP001080138)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€2.5900
    • 10:€2.3900
    • 25:€2.2900
    • 50:€2.1900
    • 100:€2.0900
    • 500:€1.9900
    • 1000:€1.8900
    IPW65R125C7
    DISTI # 726-IPW65R125C7    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		676
    • 1:$4.6200
    • 10:$3.9300
    • 100:$3.4100
    • 250:$3.2300
    • 500:$2.9000
    IPW65R125C7XKSA1
    DISTI # 726-IPW65R125C7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		234
    • 1:$4.6200
    • 10:$3.9300
    • 100:$3.4100
    • 250:$3.2300
    • 500:$2.9000
    IPW65R125C7XKSA1
    DISTI # IPW65R125C7    		Infineon Technologies AGN-Ch 650V 18A 101W 0,125R TO247
    RoHS: Compliant    		221
    • 1:€6.6000
    • 10:€3.6000
    • 50:€2.1000
    • 100:€2.0000
    IPW65R125C7XKSA1
    DISTI # XSKDRABS0034515    		Infineon Technologies AG 
    RoHS: Compliant    		570 in Stock0 on Order
    • 570:$3.2520
    • 240:$3.4800
    Imagen Parte # Descripción
    IPW65R125C7

    Mfr.#: IPW65R125C7

    OMO.#: OMO-IPW65R125C7

    		 MOSFET HIGH POWER_NEW
    IPW65R125C7XKSA1

    Mfr.#: IPW65R125C7XKSA1

    OMO.#: OMO-IPW65R125C7XKSA1

    		 MOSFET HIGH POWER_NEW
    IPW65R125C7XKSA1

    Mfr.#: IPW65R125C7XKSA1

    OMO.#: OMO-IPW65R125C7XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V TO247
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de IPW65R125C7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,22 US$
    3,22 US$
    10
    3,06 US$
    30,61 US$
    100
    2,90 US$
    289,94 US$
    500
    2,74 US$
    1 369,20 US$
    1000
    2,58 US$
    2 577,30 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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