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IPW65R125C7

IPW65R125C7
Mfr. #:
IPW65R125C7
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW65R125C7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPW65R125C7 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
111 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
35 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
101 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
16.13 mm
Serie:
CoolMOS C7
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
Infineon Technologies
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
71 ns
Tiempo típico de retardo de encendido:
14 ns
Parte # Alias:
IPW65R125C7XKSA1 SP001080138
Unidad de peso:
1.340411 oz
Tags
IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Imagen Parte # Descripción
50A02CH-TL-E

Mfr.#: 50A02CH-TL-E

OMO.#: OMO-50A02CH-TL-E

 Bipolar Transistors - BJT BIP PNP 0.5A 50V
MM3Z15VB

Mfr.#: MM3Z15VB

OMO.#: OMO-MM3Z15VB

 Zener Diodes Diode Zener 15.0V 200mW 2%
A1P25S12M3

Mfr.#: A1P25S12M3

OMO.#: OMO-A1P25S12M3

 IGBT Modules PTD HIGH VOLTAGE
FCH041N60E

Mfr.#: FCH041N60E

OMO.#: OMO-FCH041N60E

 MOSFET SF2 600V 41MOHM E TO247
FCH125N65S3R0-F155

Mfr.#: FCH125N65S3R0-F155

OMO.#: OMO-FCH125N65S3R0-F155

 MOSFET SUPERFET3 650V 24A 125 mOhm
PA-T2X-38E

Mfr.#: PA-T2X-38E

OMO.#: OMO-PA-T2X-38E

 Heat Sinks 38mm Heatsink Anodized
381LQ221M400H452

Mfr.#: 381LQ221M400H452

OMO.#: OMO-381LQ221M400H452-CORNELL-DUBILIER-ELECTRONICS

 Aluminum Electrolytic Capacitors - Snap In 220uF 400V 20%
381LQ221M400J032

Mfr.#: 381LQ221M400J032

OMO.#: OMO-381LQ221M400J032-CORNELL-DUBILIER-ELECTRONICS

 Aluminum Electrolytic Capacitors - Snap In 400Volts 220uF 25X35
50A02CH-TL-E

Mfr.#: 50A02CH-TL-E

OMO.#: OMO-50A02CH-TL-E-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT BIP PNP 0.5A 50V
FCH041N60E

Mfr.#: FCH041N60E

OMO.#: OMO-FCH041N60E-ON-SEMICONDUCTOR

 MOSFET N CH 600V 77A TO-247
Disponibilidad
Valores:
674
En orden:
2657
Ingrese la cantidad:
El precio actual de IPW65R125C7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,62 US$
4,62 US$
10
3,93 US$
39,30 US$
100
3,41 US$
341,00 US$
250
3,23 US$
807,50 US$
500
2,90 US$
1 450,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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