GS8161E18DGD-150V

GS8161E18DGD-150V
Mfr. #:
GS8161E18DGD-150V
Fabricante:
GSI Technology
Descripción:
SRAM 1.8/2.5V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161E18DGD-150V Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161E18DGD-150V más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
7.5 ns
Frecuencia máxima de reloj:
150 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
160 mA, 180 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161E18DGD
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
18
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS8161E18DGD-1, GS8161E18DGD, GS8161E18DG, GS8161E1, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 7.5ns/3.8ns 165-Pin FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS8161E18DGD-250I

Mfr.#: GS8161E18DGD-250I

OMO.#: OMO-GS8161E18DGD-250I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-333IV

Mfr.#: GS8161E18DGT-333IV

OMO.#: OMO-GS8161E18DGT-333IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-400

Mfr.#: GS8161E18DGD-400

OMO.#: OMO-GS8161E18DGD-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-333

Mfr.#: GS8161E18DGT-333

OMO.#: OMO-GS8161E18DGT-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-150V

Mfr.#: GS8161E18DGD-150V

OMO.#: OMO-GS8161E18DGD-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-150IV

Mfr.#: GS8161E18DGT-150IV

OMO.#: OMO-GS8161E18DGT-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-333V

Mfr.#: GS8161E18DGT-333V

OMO.#: OMO-GS8161E18DGT-333V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-250IV

Mfr.#: GS8161E18DGT-250IV

OMO.#: OMO-GS8161E18DGT-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-333I

Mfr.#: GS8161E18DGT-333I

OMO.#: OMO-GS8161E18DGT-333I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-400I

Mfr.#: GS8161E18DGT-400I

OMO.#: OMO-GS8161E18DGT-400I

SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de GS8161E18DGD-150V es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
24,00 US$
24,00 US$
25
22,29 US$
557,25 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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