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FS50R06YL4

FS50R06YL4
Mfr. #:
FS50R06YL4
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules N-CH 600V 55A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FS50R06YL4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
Producto:
Módulos de silicio IGBT
Configuración:
Hex
Voltaje colector-emisor VCEO Max:
600 V
Corriente continua del colector a 25 C:
55 A
Paquete / Caja:
EASY2
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Embalaje:
Bandeja
Altura:
17 mm
Longitud:
55.9 mm
Ancho:
45.6 mm
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
20
Subcategoría:
IGBT
Parte # Alias:
FS50R06YL4BOMA1 SP000100285
Tags
FS50R06Y, FS50R06, FS50R0, FS50R, FS50, FS5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    I***v
    I***v
    RU

    Corresponds to the description i recommend the seller 2018-11-09 ordered a came 2019-01-08

    2019-01-08
    A***o
    A***o
    RU

    Wavgat board, atmega 168 chip.

    2019-04-06
*** Electronic Components
IGBT Modules N-CH 600V 55A
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High Voltage Power Module, Phase leg, 1200V, RoHS
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Trans IGBT Module N-CH 1200V 55A 208000mW 32-Pin Case SP-3 Tube
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Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
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High Voltage Power Module, Three Phase bridge, 1200V, RoHS
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PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes
***i-Key
IGBT MOD TRENCH 3PH BRIDGE SP3
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Trans IGBT Module N-CH 1200V 55A 210000mW 28-Pin ECONO2-6 Tray
***ark
Igbt Mod, 6 N-Ch, 1.2Kv, 55A, 210W Rohs Compliant: Yes
***et
Transistor IGBT Module N-CH 1200V 55A ±20V Screw Tray
***ineon SCT
1200 V, 35 A sixpack IGBT Module, AG-ECONO2-6, RoHS
***ment14 APAC
IGBT MODULE, 1.2KV, 55A, SIX PACK;
***S
French Electronic Distributor since 1988
***ineon
EconoPACK 2 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT3, Emitter Controlled HE diode and NTC | Summary of Features: High power density; Established Econo module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
*** Stop Electro
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
***el Electronic
Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3
***rochip SCT
High Voltage Power Module, Full bridge, 1200V, RoHS
***ark
PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes
***i-Key
IGBT MOD TRENCH FULL BRIDGE SP3
***ical
Trans IGBT Module N=-CH 1200V 45A 205000mW 18-Pin EASY1B Tray
***nell
IGBT, LOW POW, 1200V, 25A, EASYPACK; Transistor Polarity: N Channel; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 205W; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ark
Igbt Module; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:205W; Operating Temperature Max:150°C; Igbt Termination:press Fit; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes
***ineon
EasyPACK 1B 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups
***ource
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
***ment14 APAC
IGBT, LOW POWER, 600V, 50A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:205W
***ineon
EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; majorhomeapplicances
Parte # Mfg. Descripción Valores Precio
FS50R06YL4BOMA1
DISTI # FS50R06YL4BOMA1-ND		Infineon Technologies AGMOD IGBT LOW PWR EASY2-1
RoHS: Compliant
Min Qty: 20
Container: Tray		Limited Supply - Call
  • 20:$62.0275
FS50R06YL4
DISTI # FS50R06YL4		Infineon Technologies AGTrans IGBT Module N-CH 600V 55A 18-Pin EASY2 (Alt: FS50R06YL4)
RoHS: Compliant
Min Qty: 20		Asia - 0
  • 20:$54.4457
  • 40:$52.9333
  • 60:$51.5027
  • 100:$50.1474
  • 200:$49.4961
  • 500:$48.8615
  • 1000:$48.2430
FS50R06YL4BOMA1
DISTI # FS50R06YL4BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: FS50R06YL4BOMA1)
RoHS: Compliant
Min Qty: 20
Container: Tray		Americas - 0
  • 20:$54.8900
  • 40:$52.8900
  • 80:$50.9900
  • 120:$49.2900
  • 200:$48.3900
FS50R06YL4
DISTI # 641-FS50R06YL4X		Infineon Technologies AGIGBT Modules N-CH 600V 55A0
    Imagen Parte # Descripción
    FS50R12KE3

    Mfr.#: FS50R12KE3

    OMO.#: OMO-FS50R12KE3

    		 IGBT Modules 1200V 50A 3-PHASE
    FS50R12W2T4_B11

    Mfr.#: FS50R12W2T4_B11

    OMO.#: OMO-FS50R12W2T4-B11

    		 IGBT Modules IGBT 1200V 50A
    FS50R12W2T4BOMA1

    Mfr.#: FS50R12W2T4BOMA1

    OMO.#: OMO-FS50R12W2T4BOMA1-INFINEON-TECHNOLOGIES

    		 MOD IGBT LOW PWR EASY2B-1
    FS50R06KE3BOSA1

    Mfr.#: FS50R06KE3BOSA1

    OMO.#: OMO-FS50R06KE3BOSA1-INFINEON-TECHNOLOGIES

    		 MOD IGBT LOW PWR ECONO2-6
    FS50R12KT4-B15

    Mfr.#: FS50R12KT4-B15

    OMO.#: OMO-FS50R12KT4-B15-1190

    		 Nuevo y original
    FS50R17K3-B17

    Mfr.#: FS50R17K3-B17

    OMO.#: OMO-FS50R17K3-B17-1190

    		 Nuevo y original
    FS50R17KE3B17BOSA1

    Mfr.#: FS50R17KE3B17BOSA1

    OMO.#: OMO-FS50R17KE3B17BOSA1-INFINEON-TECHNOLOGIES

    		 MOD IGBT LOW PWR ECONO2-6
    FS50R06W1E3B11BOMA1

    Mfr.#: FS50R06W1E3B11BOMA1

    OMO.#: OMO-FS50R06W1E3B11BOMA1-INFINEON-TECHNOLOGIES

    		 MOD IGBT LOW PWR EASY1B-2
    FS50R12KT4PB11BPSA1

    Mfr.#: FS50R12KT4PB11BPSA1

    OMO.#: OMO-FS50R12KT4PB11BPSA1-INFINEON-TECHNOLOGIES

    		 MOD IGBT LOW PWR ECONO2-6
    FS50R12W2T4B11BOMA1

    Mfr.#: FS50R12W2T4B11BOMA1

    OMO.#: OMO-FS50R12W2T4B11BOMA1-INFINEON-TECHNOLOGIES

    		 MOD IGBT LOW PWR EASY2B-2
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de FS50R06YL4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    62,88 US$
    62,88 US$
    5
    61,47 US$
    307,35 US$
    10
    59,07 US$
    590,70 US$
    25
    57,17 US$
    1 429,25 US$
    50
    57,16 US$
    2 858,00 US$
    100
    52,97 US$
    5 297,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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