SIHJ7N65E-T1-GE3

SIHJ7N65E-T1-GE3
Mfr. #:
SIHJ7N65E-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHJ7N65E-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHJ7N65E-T1-GE3 DatasheetSIHJ7N65E-T1-GE3 Datasheet (P4-P6)SIHJ7N65E-T1-GE3 Datasheet (P7-P9)SIHJ7N65E-T1-GE3 Datasheet (P10-P11)
ECAD Model:
Más información:
SIHJ7N65E-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8L-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
7.9 A
Rds On - Resistencia de la fuente de drenaje:
520 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
22 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
96 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.04 mm
Longitud:
6.15 mm
Serie:
E
Ancho:
5.13 mm
Marca:
Vishay / Siliconix
Otoño:
18 ns
Tipo de producto:
MOSFET
Hora de levantarse:
18 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
16 ns
Unidad de peso:
0.017870 oz
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***V
    M***V
    RU

    On my laser sight, the point is perfectly even, and here the point is not even

    2019-03-11
    R***o
    R***o
    LV

    Excellent transistors good replacement kt805

    2019-02-02
    E**c
    E**c
    UA

    Fast shipping

    2019-04-13
    E**j
    E**j
    IT

    thank you

    2019-02-20
***ical
Trans MOSFET N-CH 650V 7.9A 5-Pin(4+Tab) PowerPAK SO T/R
***nell
MOSFET, N-CH, 650V, 7.9A, POWERPAKSO
***ark
N-Channel 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
600V/650V E Series PowerPAK SO-8L MOSFETs
Vishay 600V/650V E Series PowerPAK® SO-8L MOSFETs offer increased reliability and reduced package inductance for lighting, industrial, telecom, computing, and consumer applications. Built on Vishay's Superjunction technology, these power MOSFETs feature low maximum ON-resistance down to 0.52Ω at 10V, ultra-low gate charge down to 17nC, and low gate charge times ON-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.Learn More
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHJ7N65E-T1-GE3
DISTI # V72:2272_17582994
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7.9A 5-Pin(4+Tab) PowerPAK SO T/R2970
  • 75000:$1.0102
  • 30000:$1.0195
  • 15000:$1.0288
  • 6000:$1.0684
  • 3000:$1.1081
  • 1000:$1.1973
  • 500:$1.3949
  • 250:$1.6096
  • 100:$1.6419
  • 50:$2.0264
  • 25:$2.0718
  • 10:$2.0941
  • 1:$2.7976
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3043In Stock
  • 1000:$1.2985
  • 500:$1.5671
  • 100:$1.9074
  • 10:$2.3730
  • 1:$2.6400
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3043In Stock
  • 1000:$1.2985
  • 500:$1.5671
  • 100:$1.9074
  • 10:$2.3730
  • 1:$2.6400
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 6000:$1.1302
  • 3000:$1.1737
SIHJ7N65E-T1-GE3
DISTI # 25817591
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7.9A 5-Pin(4+Tab) PowerPAK SO T/R2970
  • 7:$2.7976
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7.9A 8-Pin PowerPAK SO T/R (Alt: SIHJ7N65E-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€1.0869
  • 18000:€1.1489
  • 12000:€1.2939
  • 6000:€1.5689
  • 3000:€2.2399
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 7.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ7N65E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$1.0609
  • 18000:$1.0899
  • 12000:$1.1209
  • 6000:$1.1689
  • 3000:$1.2049
SIHJ7N65E-T1-GE3
DISTI # 20AC3840
Vishay IntertechnologiesN-CHANNEL 650V0
  • 10000:$1.0400
  • 6000:$1.0800
  • 4000:$1.1200
  • 2000:$1.2500
  • 1000:$1.3100
  • 1:$1.4000
SIHJ7N65E-T1-GE3
DISTI # 78-SIHJ7N65E-T1-GE3
Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK SO-8L
RoHS: Compliant
5935
  • 1:$2.5700
  • 10:$2.1300
  • 100:$1.6500
  • 500:$1.4500
  • 1000:$1.2000
  • 3000:$1.1100
  • 6000:$1.0700
SIHJ7N65E-T1-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK SO-8L
RoHS: Compliant
Americas -
    SIHJ7N65E-T1-GE3
    DISTI # 2630943
    Vishay IntertechnologiesMOSFET, N-CH, 650V, 7.9A, POWERPAKSO3003
    • 500:£0.9990
    • 250:£1.0700
    • 100:£1.1300
    • 10:£1.4700
    • 1:£1.9900
    SIHJ7N65E-T1-GE3
    DISTI # 2630943
    Vishay IntertechnologiesMOSFET, N-CH, 650V, 7.9A, POWERPAKSO
    RoHS: Compliant
    3003
    • 6000:$1.6100
    • 3000:$1.6700
    • 1000:$1.8100
    • 500:$2.1900
    • 100:$2.4900
    • 10:$3.2100
    • 1:$3.8700
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    Mfr.#: SIHD2N80E-GE3

    OMO.#: OMO-SIHD2N80E-GE3-VISHAY

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    TTL-232R-3V3

    Mfr.#: TTL-232R-3V3

    OMO.#: OMO-TTL-232R-3V3-FUTURE-TECHNOLOGY-DEVICES-INTL

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    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de SIHJ7N65E-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,57 US$
    2,57 US$
    10
    2,13 US$
    21,30 US$
    100
    1,65 US$
    165,00 US$
    500
    1,45 US$
    725,00 US$
    1000
    1,20 US$
    1 200,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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