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SIHD2N80E-GE3

SIHD2N80E-GE3
Mfr. #:
SIHD2N80E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD2N80E-GE3 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
SIHD2N80E-GE3 DatasheetSIHD2N80E-GE3 Datasheet (P4-P6)SIHD2N80E-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHD2N80E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
2.8 A
Rds On - Resistencia de la fuente de drenaje:
2.38 Ohms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
9.8 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
62.5 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
E
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Otoño:
27 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
19 ns
Tiempo típico de retardo de encendido:
11 ns
Unidad de peso:
0.011993 oz
Tags
SIHD2, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 800V 2.8A 3-Pin TO-252
***ment14 APAC
MOSFET, N-CH, 800V, 2.8A, 150DEG C
***ark
Mosfet, N-Ch, 800V, 2.8A, 150Deg C; Transistor Polarity:n Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHD2N80E-GE3
DISTI # SIHD2N80E-GE3-ND		Vishay SiliconixMOSFET N-CH 800V 2.8A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1401In Stock
  • 6000:$0.5726
  • 3000:$0.6027
  • 500:$0.8180
  • 100:$0.9902
  • 25:$1.2056
  • 10:$1.2700
  • 1:$1.4200
SIHD2N80E-GE3
DISTI # SIHD2N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 2.8A ID Thin Lead 3-Pin DPAK (Alt: SIHD2N80E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.5479
  • 500:€0.5549
  • 100:€0.5639
  • 50:€0.5729
  • 25:€0.6479
  • 10:€0.7989
  • 1:€1.1139
SIHD2N80E-GE3
DISTI # SIHD2N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 2.8A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD2N80E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.5249
  • 18000:$0.5399
  • 12000:$0.5549
  • 6000:$0.5789
  • 3000:$0.5959
SIHD2N80E-GE3
DISTI # 78AC6518		Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes2995
  • 500:$0.7880
  • 250:$0.8520
  • 100:$0.9160
  • 50:$1.0100
  • 25:$1.1100
  • 10:$1.2000
  • 1:$1.4500
SIHD2N80E-GE3
DISTI # 78-SIHD2N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		2729
  • 1:$1.4400
  • 10:$1.1900
  • 100:$0.9070
  • 500:$0.7800
  • 1000:$0.6150
SIHD2N80E-GE3
DISTI # 2932923		Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, 150DEG C
RoHS: Compliant		2995
  • 1000:$0.9200
  • 500:$0.9740
  • 250:$1.1500
  • 100:$1.4000
  • 10:$1.7900
  • 1:$2.1600
SIHD2N80E-GE3
DISTI # 2932923		Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, 150DEG C2990
  • 500:£0.5650
  • 250:£0.6110
  • 100:£0.6570
  • 10:£0.9150
  • 1:£1.1900
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de SIHD2N80E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,44 US$
1,44 US$
10
1,19 US$
11,90 US$
100
0,91 US$
90,70 US$
500
0,78 US$
390,00 US$
1000
0,62 US$
615,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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